EA200600406A1 - Method for producing semiconductor films from four and more component alloys of elements of ib-iiia-via groups - Google Patents

Method for producing semiconductor films from four and more component alloys of elements of ib-iiia-via groups

Info

Publication number
EA200600406A1
EA200600406A1 EA200600406A EA200600406A EA200600406A1 EA 200600406 A1 EA200600406 A1 EA 200600406A1 EA 200600406 A EA200600406 A EA 200600406A EA 200600406 A EA200600406 A EA 200600406A EA 200600406 A1 EA200600406 A1 EA 200600406A1
Authority
EA
Eurasian Patent Office
Prior art keywords
via
elements
iiia
alloy
film
Prior art date
Application number
EA200600406A
Other languages
Russian (ru)
Other versions
EA010171B1 (en
Inventor
Вивиан Альбертс
Original Assignee
Юниверсити Оф Йоханнесбург
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Priority to ZA200306316 priority Critical
Priority to ZA200402497 priority
Application filed by Юниверсити Оф Йоханнесбург filed Critical Юниверсити Оф Йоханнесбург
Priority to PCT/IB2004/051458 priority patent/WO2005017978A2/en
Publication of EA200600406A1 publication Critical patent/EA200600406A1/en
Publication of EA010171B1 publication Critical patent/EA010171B1/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EA200600406(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

This invention relates to a method for producing semiconductor films of four or more component alloys of elements from groups IB-IIIA-VIA. This method includes the steps of: (i) providing a metal film containing a mixture of metals from Group IB and Group IIIA; (ii) heat treatment of this metal film in the presence of the source of the first element of the VIA group (hereinafter the first element of the VIA group is referred to as VIA) under the conditions of forming the first film containing a mixture of at least one binary alloy selected from the group consisting of elements of groups IB-VIA and alloy of elements of groups IIIA-VIA, and at least one ternary alloy of elements from groups IB-IIIA-VIAi; (iii) optional heat treatment of the first film in the presence of a source of the second element from group VIA (said second element from group VI is hereinafter referred to as VIA) under such conditions as to turn the first film into a second film that includes at least one alloy , selected from the group consisting of an alloy of elements of groups IB-VIA-VIA and an alloy of elements of groups IIIA-VIA-VIA; and at least one ternary alloy of elements from groups IB-III-VIA from step (ii); (iv) heat treatment of either the first film or the second film in order to form a semiconductor film of four or more components of the alloy of elements from groups IB-IIIA-VIA.
EA200600406A 2003-08-14 2004-08-13 The method for producing semiconductor films of four or more component elements of the alloy groups ib - iiia - via EA010171B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
EA200600406A1 true EA200600406A1 (en) 2006-08-25
EA010171B1 EA010171B1 (en) 2008-06-30

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
EA200600407A EA009012B1 (en) 2003-08-14 2004-08-13 Semiconductor films of four or more component elements of the alloy groups i-iii-vi
EA200600406A EA010171B1 (en) 2003-08-14 2004-08-13 The method for producing semiconductor films of four or more component elements of the alloy groups ib - iiia - via

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EA200600407A EA009012B1 (en) 2003-08-14 2004-08-13 Semiconductor films of four or more component elements of the alloy groups i-iii-vi

Country Status (20)

Country Link
US (3) US7682939B2 (en)
EP (3) EP1654769B2 (en)
JP (2) JP4994032B2 (en)
KR (2) KR101027318B1 (en)
AP (2) AP2180A (en)
AT (1) AT510304T (en)
AU (2) AU2004301075B2 (en)
BR (2) BRPI0413572A (en)
CA (2) CA2539556C (en)
CY (1) CY1111940T1 (en)
DE (1) DE202004021800U1 (en)
DK (1) DK1654769T4 (en)
EA (2) EA009012B1 (en)
EG (1) EG25410A (en)
ES (1) ES2366888T5 (en)
HK (1) HK1097105A1 (en)
IL (2) IL173694D0 (en)
MX (2) MXPA06001723A (en)
OA (2) OA13237A (en)
WO (2) WO2005017978A2 (en)

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US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
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Also Published As

Publication number Publication date
IL173694D0 (en) 2006-07-05
IL173693D0 (en) 2006-07-05
BRPI0413572A (en) 2006-10-17
EP1654769A2 (en) 2006-05-10
US8735214B2 (en) 2014-05-27
US7744705B2 (en) 2010-06-29
KR20060082075A (en) 2006-07-14
WO2005017978A2 (en) 2005-02-24
JP2007503708A (en) 2007-02-22
OA13237A (en) 2006-12-13
AT510304T (en) 2011-06-15
CA2539556A1 (en) 2005-02-24
AP200603508A0 (en) 2006-02-28
MXPA06001723A (en) 2007-04-25
MXPA06001726A (en) 2007-05-04
CA2535703C (en) 2011-04-19
KR101027318B1 (en) 2011-04-06
JP4864705B2 (en) 2012-02-01
AU2004301076A1 (en) 2005-02-24
EP2284905A2 (en) 2011-02-16
OA13236A (en) 2006-12-13
DK1654769T3 (en) 2011-09-12
CY1111940T1 (en) 2015-11-04
BRPI0413567A (en) 2006-10-17
US20060222558A1 (en) 2006-10-05
EA010171B1 (en) 2008-06-30
CA2539556C (en) 2010-10-26
US20100190292A1 (en) 2010-07-29
JP4994032B2 (en) 2012-08-08
EP1654751A2 (en) 2006-05-10
DE202004021800U1 (en) 2011-04-21
DK1654769T4 (en) 2018-05-22
AU2004301076B2 (en) 2009-11-05
ES2366888T3 (en) 2011-10-26
AP2180A (en) 2010-11-29
AU2004301075A1 (en) 2005-02-24
AP2149A (en) 2010-09-01
EP1654769B1 (en) 2011-05-18
WO2005017978A3 (en) 2005-10-13
IL173693A (en) 2014-01-30
US20070004078A1 (en) 2007-01-04
AU2004301075B2 (en) 2009-10-08
WO2005017979A3 (en) 2006-06-01
AP200603507A0 (en) 2006-02-28
KR20060058717A (en) 2006-05-30
EA009012B1 (en) 2007-10-26
EG25410A (en) 2012-01-02
JP2007502247A (en) 2007-02-08
WO2005017979A2 (en) 2005-02-24
HK1097105A1 (en) 2010-12-17
US7682939B2 (en) 2010-03-23
CA2535703A1 (en) 2005-02-24
KR101004452B1 (en) 2010-12-28
ES2366888T5 (en) 2018-05-17
EA200600407A1 (en) 2006-08-25
EP1654769B2 (en) 2018-02-07

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