EA200600406A1 - METHOD FOR PRODUCING SEMICONDUCTOR FILMS FROM FOUR AND MORE COMPONENT ALLOYS OF ELEMENTS OF IB-IIIA-VIA GROUPS - Google Patents

METHOD FOR PRODUCING SEMICONDUCTOR FILMS FROM FOUR AND MORE COMPONENT ALLOYS OF ELEMENTS OF IB-IIIA-VIA GROUPS

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Publication number
EA200600406A1
EA200600406A1 EA200600406A EA200600406A EA200600406A1 EA 200600406 A1 EA200600406 A1 EA 200600406A1 EA 200600406 A EA200600406 A EA 200600406A EA 200600406 A EA200600406 A EA 200600406A EA 200600406 A1 EA200600406 A1 EA 200600406A1
Authority
EA
Eurasian Patent Office
Prior art keywords
elements
iiia
groups
group
alloy
Prior art date
Application number
EA200600406A
Other languages
Russian (ru)
Other versions
EA010171B1 (en
Inventor
Вивиан Альбертс
Original Assignee
Юниверсити Оф Йоханнесбург
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EA200600406(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Юниверсити Оф Йоханнесбург filed Critical Юниверсити Оф Йоханнесбург
Publication of EA200600406A1 publication Critical patent/EA200600406A1/en
Publication of EA010171B1 publication Critical patent/EA010171B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Particle Accelerators (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Это изобретение относится к способу получения полупроводниковых пленок из четырех или более компонентных сплавов элементов из групп IB-IIIA-VIA. Этот способ включает в себя стадии: (i) предоставление металлической пленки, содержащей смесь металлов из группы IB и группы IIIA; (ii) термическая обработка этой металлической пленки в присутствии источника первого элемента группы VIA (в последующем указанный первый элемент группы VIA называется как VIA) в условиях формирования первой пленки, содержащей смесь по меньшей мере одного бинарного сплава, который выбирают из группы, состоящей из сплава элементов групп IB-VIAи сплава элементов групп IIIA-VIA, и по меньшей мере одного тройного сплава элементов из групп IB-IIIA-VIAi; (iii) необязательная термическая обработка первой пленки в присутствии источника второго элемента из группы VIA (указанный второй элемент из группы VI в последующем называется как VIA) в таких условиях, чтобы превратить первую пленку во вторую пленку, которая включает в себя по меньшей мере один сплав, выбранный из группы, состоящей из сплава элементов групп IB-VIA-VIAи сплава элементов групп IIIA-VIA-VIA; и по меньшей мере одного тройного сплава элементов из групп IB-III-VIAсо стадии (ii); (iv) термическая обработка или первой пленки, или второй пленки для того, чтобы образовалась полупроводниковая пленка из четырех или более компонентов сплава элементов из групп IB-IIIA-VIA.This invention relates to a method for producing semiconductor films of four or more component alloys of elements from groups IB-IIIA-VIA. This method includes the steps of: (i) providing a metal film containing a mixture of metals from Group IB and Group IIIA; (ii) heat treatment of this metal film in the presence of the source of the first element of the VIA group (hereinafter the first element of the VIA group is referred to as VIA) under the conditions of forming the first film containing a mixture of at least one binary alloy selected from the group consisting of elements of groups IB-VIA and alloy of elements of groups IIIA-VIA, and at least one ternary alloy of elements from groups IB-IIIA-VIAi; (iii) optional heat treatment of the first film in the presence of a source of the second element from group VIA (said second element from group VI is hereinafter referred to as VIA) under such conditions as to turn the first film into a second film that includes at least one alloy , selected from the group consisting of an alloy of elements of groups IB-VIA-VIA and an alloy of elements of groups IIIA-VIA-VIA; and at least one ternary alloy of elements from groups IB-III-VIA from step (ii); (iv) heat treatment of either the first film or the second film in order to form a semiconductor film of four or more components of the alloy of elements from groups IB-IIIA-VIA.

EA200600406A 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films EA010171B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
EA200600406A1 true EA200600406A1 (en) 2006-08-25
EA010171B1 EA010171B1 (en) 2008-06-30

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
EA200600406A EA010171B1 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films
EA200600407A EA009012B1 (en) 2003-08-14 2004-08-13 Group i-iii quarternary or higher alloy semiconductor films

Family Applications After (1)

Application Number Title Priority Date Filing Date
EA200600407A EA009012B1 (en) 2003-08-14 2004-08-13 Group i-iii quarternary or higher alloy semiconductor films

Country Status (20)

Country Link
US (3) US7744705B2 (en)
EP (3) EP2284905A2 (en)
JP (2) JP4994032B2 (en)
KR (2) KR101027318B1 (en)
AP (2) AP2149A (en)
AT (1) ATE510304T2 (en)
AU (2) AU2004301075B2 (en)
BR (2) BRPI0413572A (en)
CA (2) CA2539556C (en)
CY (1) CY1111940T1 (en)
DE (1) DE202004021800U1 (en)
DK (1) DK1654769T4 (en)
EA (2) EA010171B1 (en)
EG (1) EG25410A (en)
ES (1) ES2366888T5 (en)
HK (1) HK1097105A1 (en)
IL (2) IL173693A (en)
MX (2) MXPA06001723A (en)
OA (2) OA13237A (en)
WO (2) WO2005017978A2 (en)

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Publication number Publication date
OA13237A (en) 2006-12-13
AU2004301075A1 (en) 2005-02-24
CA2535703C (en) 2011-04-19
US20100190292A1 (en) 2010-07-29
WO2005017979A2 (en) 2005-02-24
ATE510304T2 (en) 2011-06-15
JP2007502247A (en) 2007-02-08
AP2180A (en) 2010-11-29
CA2539556A1 (en) 2005-02-24
CA2539556C (en) 2010-10-26
EP1654769B1 (en) 2011-05-18
KR20060058717A (en) 2006-05-30
WO2005017979A3 (en) 2006-06-01
CA2535703A1 (en) 2005-02-24
IL173694A0 (en) 2006-07-05
KR101027318B1 (en) 2011-04-06
DK1654769T3 (en) 2011-09-12
EP1654769B2 (en) 2018-02-07
US7744705B2 (en) 2010-06-29
AU2004301076A1 (en) 2005-02-24
EP1654751A2 (en) 2006-05-10
EP1654769A2 (en) 2006-05-10
US20060222558A1 (en) 2006-10-05
AP2006003508A0 (en) 2006-02-28
AP2006003507A0 (en) 2006-02-28
AU2004301075B2 (en) 2009-10-08
WO2005017978A2 (en) 2005-02-24
MXPA06001726A (en) 2007-05-04
EA010171B1 (en) 2008-06-30
JP4864705B2 (en) 2012-02-01
OA13236A (en) 2006-12-13
US20070004078A1 (en) 2007-01-04
EP2284905A2 (en) 2011-02-16
US8735214B2 (en) 2014-05-27
ES2366888T5 (en) 2018-05-17
CY1111940T1 (en) 2015-11-04
KR20060082075A (en) 2006-07-14
IL173693A0 (en) 2006-07-05
DE202004021800U1 (en) 2011-04-21
HK1097105A1 (en) 2007-06-15
EA009012B1 (en) 2007-10-26
BRPI0413567A (en) 2006-10-17
US7682939B2 (en) 2010-03-23
JP4994032B2 (en) 2012-08-08
AU2004301076B2 (en) 2009-11-05
DK1654769T4 (en) 2018-05-22
JP2007503708A (en) 2007-02-22
ES2366888T3 (en) 2011-10-26
MXPA06001723A (en) 2007-04-25
WO2005017978A3 (en) 2005-10-13
AP2149A (en) 2010-09-01
EA200600407A1 (en) 2006-08-25
IL173693A (en) 2014-01-30
KR101004452B1 (en) 2010-12-28
BRPI0413572A (en) 2006-10-17
EG25410A (en) 2012-01-02

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