DK3878066T3 - Bundet afstembar vcsel med tovejsaktuering - Google Patents

Bundet afstembar vcsel med tovejsaktuering Download PDF

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Publication number
DK3878066T3
DK3878066T3 DK19809361.9T DK19809361T DK3878066T3 DK 3878066 T3 DK3878066 T3 DK 3878066T3 DK 19809361 T DK19809361 T DK 19809361T DK 3878066 T3 DK3878066 T3 DK 3878066T3
Authority
DK
Denmark
Prior art keywords
vcsel
tuning
bound
way actuation
actuation
Prior art date
Application number
DK19809361.9T
Other languages
English (en)
Inventor
James W Getz
Peter S Whitney
Original Assignee
Excelitas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Excelitas Tech Corp filed Critical Excelitas Tech Corp
Application granted granted Critical
Publication of DK3878066T3 publication Critical patent/DK3878066T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
DK19809361.9T 2018-11-05 2019-11-05 Bundet afstembar vcsel med tovejsaktuering DK3878066T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862755796P 2018-11-05 2018-11-05
PCT/US2019/059903 WO2020097105A1 (en) 2018-11-05 2019-11-05 Bonded tunable vcsel with bi-directional actuation

Publications (1)

Publication Number Publication Date
DK3878066T3 true DK3878066T3 (da) 2023-03-27

Family

ID=68655774

Family Applications (1)

Application Number Title Priority Date Filing Date
DK19809361.9T DK3878066T3 (da) 2018-11-05 2019-11-05 Bundet afstembar vcsel med tovejsaktuering

Country Status (6)

Country Link
US (2) US11431151B2 (da)
EP (1) EP3878066B1 (da)
JP (1) JP2022506532A (da)
KR (1) KR20210086703A (da)
DK (1) DK3878066T3 (da)
WO (1) WO2020097105A1 (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11699894B2 (en) * 2021-08-16 2023-07-11 Excelitas Technologies Corp. Bonded tunable VCSEL with bi-directional actuation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6721098B2 (en) 2000-12-22 2004-04-13 Axsun Technologies, Inc. Triple electrode MOEMS tunable filter and fabrication process therefor
US7420738B2 (en) 2003-12-22 2008-09-02 Axsun Technologies, Inc. Dual membrane single cavity Fabry-Perot MEMS filter
US7701588B2 (en) * 2006-04-11 2010-04-20 Santec Corporation Swept source type optical coherent tomography system
US9391423B2 (en) * 2008-12-16 2016-07-12 Massachusetts Institute Of Technology Method and applications of thin-film membrane transfer
US20140176958A1 (en) 2012-12-21 2014-06-26 Axsun Technologies, Inc. OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source
JP2016523444A (ja) * 2013-07-03 2016-08-08 インフェニックス インコーポレイテッドＩｎｐｈｅｎｉｘ， Ｉｎｃ． 掃引源光干渉断層撮影システム用の波長同調型垂直キャビティ面発光レーザー
US10359551B2 (en) * 2013-08-12 2019-07-23 Axsun Technologies, Inc. Dielectric-enhanced metal coatings for MEMS tunable filters
JP2015062217A (ja) * 2013-08-19 2015-04-02 キヤノン株式会社 光源装置と面発光レーザの駆動方法、および画像取得装置
JP2016027648A (ja) * 2014-06-30 2016-02-18 キヤノン株式会社 面発光レーザ、及び前記面発光レーザを用いた光干渉断層計
US10951007B2 (en) 2018-05-11 2021-03-16 Excelitas Technologies Corp. Optically pumped tunable VCSEL employing geometric isolation
EP3791451A1 (en) 2018-05-11 2021-03-17 Excelitas Technologies Corp. Tunable vcsel polarization control through dissimilar die bonding

Also Published As

Publication number Publication date
WO2020097105A1 (en) 2020-05-14
US20230046578A1 (en) 2023-02-16
US20200144793A1 (en) 2020-05-07
EP3878066B1 (en) 2023-01-04
KR20210086703A (ko) 2021-07-08
US11431151B2 (en) 2022-08-30
JP2022506532A (ja) 2022-01-17
EP3878066A1 (en) 2021-09-15

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