DK3485519T3 - Skalerbar kvantebegrænset indretning og fremgangsmåde til produktion af den samme - Google Patents

Skalerbar kvantebegrænset indretning og fremgangsmåde til produktion af den samme Download PDF

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Publication number
DK3485519T3
DK3485519T3 DK17745859.3T DK17745859T DK3485519T3 DK 3485519 T3 DK3485519 T3 DK 3485519T3 DK 17745859 T DK17745859 T DK 17745859T DK 3485519 T3 DK3485519 T3 DK 3485519T3
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DK
Denmark
Prior art keywords
producing
same
limited device
scalable quantum
scalable
Prior art date
Application number
DK17745859.3T
Other languages
English (en)
Inventor
Mete Atature
Dhiren Kara
Berraquero Carmen Palacios
Original Assignee
Cambridge Entpr Ltd
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Application filed by Cambridge Entpr Ltd filed Critical Cambridge Entpr Ltd
Application granted granted Critical
Publication of DK3485519T3 publication Critical patent/DK3485519T3/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
DK17745859.3T 2016-07-18 2017-07-18 Skalerbar kvantebegrænset indretning og fremgangsmåde til produktion af den samme DK3485519T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1612419.0A GB201612419D0 (en) 2016-07-18 2016-07-18 A scalable quantum-confined device
PCT/GB2017/052110 WO2018015738A1 (en) 2016-07-18 2017-07-18 A scalable quantum-confined device

Publications (1)

Publication Number Publication Date
DK3485519T3 true DK3485519T3 (da) 2021-02-15

Family

ID=56890568

Family Applications (1)

Application Number Title Priority Date Filing Date
DK17745859.3T DK3485519T3 (da) 2016-07-18 2017-07-18 Skalerbar kvantebegrænset indretning og fremgangsmåde til produktion af den samme

Country Status (6)

Country Link
US (1) US10700238B2 (da)
EP (1) EP3485519B1 (da)
CN (1) CN109844969B (da)
DK (1) DK3485519T3 (da)
GB (1) GB201612419D0 (da)
WO (1) WO2018015738A1 (da)

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CN110823845B (zh) * 2018-08-08 2021-05-25 京东方科技集团股份有限公司 光谱仪及其制作方法
CN109390439A (zh) * 2018-09-26 2019-02-26 杭州电子科技大学 一种光强可调的发光器件的制备方法
US10784431B2 (en) 2018-10-29 2020-09-22 International Business Machines Corporation Dielectric holder for quantum devices
CN109817770B (zh) * 2019-01-25 2021-03-02 上海电力学院 一种利用局部应力制备二维柔性发光阵列的方法
US10879445B2 (en) * 2019-02-12 2020-12-29 University Of Oregon Deterministic quantum emitter formation in hexagonal boron nitride via controlled edge creation
WO2020181362A1 (en) * 2019-03-08 2020-09-17 Infinite Potential Laboratories Lp Quantum control devices and methods
US11145772B2 (en) 2019-03-11 2021-10-12 At&T Intellectual Property I, L.P. Device for photo spectroscopy having an atomic-scale bilayer
CN110044469B (zh) * 2019-03-19 2022-04-22 深圳大学 一种运动检测装置及制备方法与应用
WO2020203746A1 (ja) * 2019-04-02 2020-10-08 ローム株式会社 単一光子源及び単一光子の出力方法
US11705535B2 (en) * 2019-08-05 2023-07-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Nano-indent process for creating single photon emitters in a two-dimensional materials platform
EP4010747B1 (de) * 2019-09-20 2023-03-08 Humboldt-Universität zu Berlin Vorrichtung zur erzeugung von einzelphotonen
US20210091240A1 (en) * 2019-09-20 2021-03-25 Triad National Security, Llc Single photon generation through mechanical deformation
CN111403567B (zh) * 2020-04-01 2021-05-14 中国科学院半导体研究所 量子点单光子源及其微透镜阵列的湿法腐蚀制备方法
CN112420872B (zh) * 2020-11-12 2023-06-16 苏州科技大学 基于WSe2/KTaO3范德华异质结的光电探测器及其制备方法
WO2022109854A1 (zh) * 2020-11-25 2022-06-02 苏州晶湛半导体有限公司 复合衬底、光电器件及其制备方法
EP4044261A1 (en) 2021-02-12 2022-08-17 ETH Zurich Confinement of neutral excitons in a semiconductor layer structure
WO2022178580A1 (en) * 2021-02-24 2022-09-01 University Of Technology Sydney Scalable and deterministic fabrication of quantum emitter arrays
US11892529B2 (en) * 2021-03-01 2024-02-06 Rensselaer Polytechnic Institute Monolayer transition metal dichalcogenides having giant valley-polarized Rydberg excitons revealed by magneto-photocurrent spectroscopy
CN113160906B (zh) * 2021-04-21 2024-01-02 南京信息工程大学 一种MXenes材料稳定性分类系统及其运行方法
KR102573861B1 (ko) * 2022-06-27 2023-09-04 한국화학연구원 옵티컬 솔더링을 이용한 결함 구조에서 이차원 박막 반도체 물질의 광특성 생성 및 제어하는 방법

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Also Published As

Publication number Publication date
EP3485519A1 (en) 2019-05-22
WO2018015738A1 (en) 2018-01-25
US10700238B2 (en) 2020-06-30
CN109844969A (zh) 2019-06-04
US20190288160A1 (en) 2019-09-19
GB201612419D0 (en) 2016-08-31
EP3485519B1 (en) 2020-12-02
CN109844969B (zh) 2022-02-01

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