DK3270512T3 - Igbt port drive kredsløb og metode - Google Patents
Igbt port drive kredsløb og metode Download PDFInfo
- Publication number
- DK3270512T3 DK3270512T3 DK17178520.7T DK17178520T DK3270512T3 DK 3270512 T3 DK3270512 T3 DK 3270512T3 DK 17178520 T DK17178520 T DK 17178520T DK 3270512 T3 DK3270512 T3 DK 3270512T3
- Authority
- DK
- Denmark
- Prior art keywords
- drive circuit
- port drive
- igbt
- igbt port
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/207,585 US9748947B1 (en) | 2016-07-12 | 2016-07-12 | IGBT gate drive circuit and method |
Publications (1)
Publication Number | Publication Date |
---|---|
DK3270512T3 true DK3270512T3 (da) | 2021-08-02 |
Family
ID=59253428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK17178520.7T DK3270512T3 (da) | 2016-07-12 | 2017-06-28 | Igbt port drive kredsløb og metode |
Country Status (4)
Country | Link |
---|---|
US (1) | US9748947B1 (da) |
EP (1) | EP3270512B1 (da) |
DK (1) | DK3270512T3 (da) |
ES (1) | ES2881786T3 (da) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10148206B2 (en) * | 2016-06-27 | 2018-12-04 | General Electric Company | Controlling operation of a power converter based on grid conditions |
EP3352375A1 (de) * | 2017-01-18 | 2018-07-25 | Siemens Aktiengesellschaft | Steuereinrichtung zum ansteuern eines bipolaren schaltbaren leistungshalbleiterbauelements, halbleitermodul sowie verfahren |
US11539359B2 (en) * | 2021-03-02 | 2022-12-27 | Infineon Technologies Ag | Monitoring safe operating area (SAO) of a power switch |
US11552575B1 (en) | 2021-08-18 | 2023-01-10 | General Electric Company | System and method for operating multi-level power converter using multiple deadtimes |
US11594953B1 (en) | 2021-10-21 | 2023-02-28 | General Electric Company | System and method for operating multi-level power converter using a multi-state deadtime |
US12113433B2 (en) | 2022-04-21 | 2024-10-08 | Ge Infrastructure Technology Llc | System and method for detecting IGBT failure in a multi-level converter using gate-emitter voltage sensing |
US11867762B1 (en) | 2022-11-18 | 2024-01-09 | Infineon Technologies Ag | Techniques for measuring voltage over a power switch using zero current detection point |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6275093B1 (en) * | 1998-02-25 | 2001-08-14 | Intersil Corporation | IGBT gate drive circuit with short circuit protection |
US6459324B1 (en) * | 2000-10-23 | 2002-10-01 | International Rectifier Corporation | Gate drive circuit with feedback-controlled active resistance |
FR2874767B1 (fr) * | 2004-08-27 | 2006-10-20 | Schneider Toshiba Inverter | Dispositif de commande d'un transistor de puissance |
FI118145B (fi) * | 2006-01-09 | 2007-07-13 | Abb Oy | Hilaohjatun kytkimen sammutus |
DE102006036569B4 (de) * | 2006-08-04 | 2015-02-26 | Infineon Technologies Austria Ag | Treiberschaltung eines Halbleiter-Leistungsschaltelementes |
US9444448B2 (en) | 2013-12-10 | 2016-09-13 | General Electric Company | High performance IGBT gate drive |
US9496864B2 (en) * | 2014-12-18 | 2016-11-15 | General Electric Company | Gate drive circuit and method of operating same |
-
2016
- 2016-07-12 US US15/207,585 patent/US9748947B1/en active Active
-
2017
- 2017-06-28 ES ES17178520T patent/ES2881786T3/es active Active
- 2017-06-28 EP EP17178520.7A patent/EP3270512B1/en active Active
- 2017-06-28 DK DK17178520.7T patent/DK3270512T3/da active
Also Published As
Publication number | Publication date |
---|---|
EP3270512A1 (en) | 2018-01-17 |
ES2881786T3 (es) | 2021-11-30 |
US9748947B1 (en) | 2017-08-29 |
EP3270512B1 (en) | 2021-04-28 |
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