DK3270512T3 - Igbt port drive kredsløb og metode - Google Patents

Igbt port drive kredsløb og metode Download PDF

Info

Publication number
DK3270512T3
DK3270512T3 DK17178520.7T DK17178520T DK3270512T3 DK 3270512 T3 DK3270512 T3 DK 3270512T3 DK 17178520 T DK17178520 T DK 17178520T DK 3270512 T3 DK3270512 T3 DK 3270512T3
Authority
DK
Denmark
Prior art keywords
drive circuit
port drive
igbt
igbt port
circuit
Prior art date
Application number
DK17178520.7T
Other languages
English (en)
Inventor
Robert Gregory Wagoner
Tobias Schuetz
Todd David Greenleaf
Terry Michael Tackman
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of DK3270512T3 publication Critical patent/DK3270512T3/da

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
DK17178520.7T 2016-07-12 2017-06-28 Igbt port drive kredsløb og metode DK3270512T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/207,585 US9748947B1 (en) 2016-07-12 2016-07-12 IGBT gate drive circuit and method

Publications (1)

Publication Number Publication Date
DK3270512T3 true DK3270512T3 (da) 2021-08-02

Family

ID=59253428

Family Applications (1)

Application Number Title Priority Date Filing Date
DK17178520.7T DK3270512T3 (da) 2016-07-12 2017-06-28 Igbt port drive kredsløb og metode

Country Status (4)

Country Link
US (1) US9748947B1 (da)
EP (1) EP3270512B1 (da)
DK (1) DK3270512T3 (da)
ES (1) ES2881786T3 (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10148206B2 (en) * 2016-06-27 2018-12-04 General Electric Company Controlling operation of a power converter based on grid conditions
EP3352375A1 (de) * 2017-01-18 2018-07-25 Siemens Aktiengesellschaft Steuereinrichtung zum ansteuern eines bipolaren schaltbaren leistungshalbleiterbauelements, halbleitermodul sowie verfahren
US11539359B2 (en) * 2021-03-02 2022-12-27 Infineon Technologies Ag Monitoring safe operating area (SAO) of a power switch
US11552575B1 (en) 2021-08-18 2023-01-10 General Electric Company System and method for operating multi-level power converter using multiple deadtimes
US11594953B1 (en) 2021-10-21 2023-02-28 General Electric Company System and method for operating multi-level power converter using a multi-state deadtime
US12113433B2 (en) 2022-04-21 2024-10-08 Ge Infrastructure Technology Llc System and method for detecting IGBT failure in a multi-level converter using gate-emitter voltage sensing
US11867762B1 (en) 2022-11-18 2024-01-09 Infineon Technologies Ag Techniques for measuring voltage over a power switch using zero current detection point

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6275093B1 (en) * 1998-02-25 2001-08-14 Intersil Corporation IGBT gate drive circuit with short circuit protection
US6459324B1 (en) * 2000-10-23 2002-10-01 International Rectifier Corporation Gate drive circuit with feedback-controlled active resistance
FR2874767B1 (fr) * 2004-08-27 2006-10-20 Schneider Toshiba Inverter Dispositif de commande d'un transistor de puissance
FI118145B (fi) * 2006-01-09 2007-07-13 Abb Oy Hilaohjatun kytkimen sammutus
DE102006036569B4 (de) * 2006-08-04 2015-02-26 Infineon Technologies Austria Ag Treiberschaltung eines Halbleiter-Leistungsschaltelementes
US9444448B2 (en) 2013-12-10 2016-09-13 General Electric Company High performance IGBT gate drive
US9496864B2 (en) * 2014-12-18 2016-11-15 General Electric Company Gate drive circuit and method of operating same

Also Published As

Publication number Publication date
EP3270512A1 (en) 2018-01-17
ES2881786T3 (es) 2021-11-30
US9748947B1 (en) 2017-08-29
EP3270512B1 (en) 2021-04-28

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