DK3008844T3 - Afstemmelig laser med flere in-line-afsnit - Google Patents

Afstemmelig laser med flere in-line-afsnit Download PDF

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Publication number
DK3008844T3
DK3008844T3 DK14810428.4T DK14810428T DK3008844T3 DK 3008844 T3 DK3008844 T3 DK 3008844T3 DK 14810428 T DK14810428 T DK 14810428T DK 3008844 T3 DK3008844 T3 DK 3008844T3
Authority
DK
Denmark
Prior art keywords
several
line sections
adjustable laser
adjustable
laser
Prior art date
Application number
DK14810428.4T
Other languages
English (en)
Inventor
Jun Zheng
Klaus Alexander Anselm
Yi Wang
Huanlin Zhang
Dion Mcintosh-Dorsey
I-Lung Ho
Original Assignee
Applied Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Optoelectronics Inc filed Critical Applied Optoelectronics Inc
Application granted granted Critical
Publication of DK3008844T3 publication Critical patent/DK3008844T3/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/572—Wavelength control
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/02—Wavelength-division multiplex systems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/02—Wavelength-division multiplex systems
    • H04J14/0227—Operation, administration, maintenance or provisioning [OAMP] of WDM networks, e.g. media access, routing or wavelength allocation
    • H04J14/0241—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths
    • H04J14/0242—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON
    • H04J14/0245—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for downstream transmission, e.g. optical line terminal [OLT] to ONU
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
DK14810428.4T 2013-06-13 2014-06-13 Afstemmelig laser med flere in-line-afsnit DK3008844T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/916,652 US20150357791A1 (en) 2013-06-13 2013-06-13 Tunable laser with multiple in-line sections
PCT/US2014/042292 WO2014201343A1 (en) 2013-06-13 2014-06-13 Tunable laser with multiple in-line sections

Publications (1)

Publication Number Publication Date
DK3008844T3 true DK3008844T3 (da) 2021-10-18

Family

ID=52022800

Family Applications (1)

Application Number Title Priority Date Filing Date
DK14810428.4T DK3008844T3 (da) 2013-06-13 2014-06-13 Afstemmelig laser med flere in-line-afsnit

Country Status (5)

Country Link
US (1) US20150357791A1 (da)
EP (1) EP3008844B1 (da)
CN (1) CN105379159B (da)
DK (1) DK3008844T3 (da)
WO (1) WO2014201343A1 (da)

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CN103262449B (zh) * 2010-12-20 2016-08-10 瑞典爱立信有限公司 无源光网络装置和方法
US9531155B2 (en) * 2014-04-09 2016-12-27 Applied Optoelectronics, Inc. Switched radio frequency (RF) driver for tunable laser with multiple in-line sections
US20170299901A1 (en) * 2014-10-08 2017-10-19 Nec Corporation Optical transmitter and optical transceiver
US9768585B2 (en) * 2015-03-18 2017-09-19 Applied Optoelectronics, Inc. Tunable laser including parallel lasing cavities with a common output
CN105024280A (zh) * 2015-08-10 2015-11-04 穆林冉 一种波长可调谐激光器
US10135218B2 (en) 2015-10-02 2018-11-20 Ayar Labs, Inc. Multi-wavelength laser system for optical data communication links and associated methods
US10171199B2 (en) * 2016-12-20 2019-01-01 Google Llc Tunable laser in an optical access network
JP6723451B2 (ja) * 2017-06-23 2020-07-15 三菱電機株式会社 波長可変レーザ装置および波長可変レーザ装置の製造方法
FI128396B (en) * 2017-11-15 2020-04-30 Teknologian Tutkimuskeskus Vtt Oy Method of providing lighting, source of electromagnetic radiation providing illumination and uses of said source
CN108155557B (zh) * 2017-12-25 2019-11-05 南京大学 一种半导体激光器和控制方法
CN110299589B (zh) * 2019-06-04 2021-11-09 中国人民解放军陆军工程大学 一种分频与倍频产生方法和装置
CN110429467B (zh) * 2019-07-15 2021-07-06 中国科学院上海光学精密机械研究所 集成化外腔半导体激光器的无跳模调频控制方法
JP7458885B2 (ja) 2020-01-28 2024-04-01 日本ルメンタム株式会社 半導体光増幅器集積レーザ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641311A (en) * 1983-12-20 1987-02-03 Rca Corporation Phase-locked semiconductor laser array with integral phase shifters
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
SE507376C2 (sv) * 1996-09-04 1998-05-18 Ericsson Telefon Ab L M Våglängdsavstämbar laseranordning
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6650673B2 (en) * 1998-12-15 2003-11-18 Bookham Technology, Plc Generation of short optical pulses using strongly complex coupled DFB lasers
US6608855B1 (en) * 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section
US6638773B1 (en) * 2002-05-31 2003-10-28 Applied Optoelectronics, Inc. Method for fabricating single-mode DBR laser with improved yield
GB0311563D0 (en) * 2003-05-20 2003-06-25 Nokia Corp Optical data transmission system
US7554668B2 (en) * 2005-09-06 2009-06-30 Carl Zeiss Meditec, Inc. Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps
US20100290489A1 (en) * 2009-05-15 2010-11-18 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method
US8559821B2 (en) * 2009-12-02 2013-10-15 Futurewei Technologies, Inc. Wavelength stabilization and locking for colorless dense wavelength division multiplexing transmitters
US8805191B2 (en) * 2011-09-29 2014-08-12 Applied Optoelectronics, Inc. Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths

Also Published As

Publication number Publication date
CN105379159A (zh) 2016-03-02
EP3008844A4 (en) 2017-01-25
CN105379159B (zh) 2018-07-24
US20150357791A1 (en) 2015-12-10
EP3008844A1 (en) 2016-04-20
EP3008844B1 (en) 2021-08-18
WO2014201343A1 (en) 2014-12-18

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