DK2396447T3 - Fremgangsmåde til ionstrålebehandling af et metallag aflejret på et substrat og det derved opnåede substrat - Google Patents
Fremgangsmåde til ionstrålebehandling af et metallag aflejret på et substrat og det derved opnåede substrat Download PDFInfo
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- DK2396447T3 DK2396447T3 DK10708319.8T DK10708319T DK2396447T3 DK 2396447 T3 DK2396447 T3 DK 2396447T3 DK 10708319 T DK10708319 T DK 10708319T DK 2396447 T3 DK2396447 T3 DK 2396447T3
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- metal layer
- substrate
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- 229910052751 metal Inorganic materials 0.000 title claims description 123
- 239000002184 metal Substances 0.000 title claims description 123
- 239000000758 substrate Substances 0.000 title claims description 75
- 238000000034 method Methods 0.000 title claims description 35
- 230000005855 radiation Effects 0.000 title 1
- 150000002500 ions Chemical class 0.000 claims description 108
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 76
- 229910052697 platinum Inorganic materials 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 238000013467 fragmentation Methods 0.000 claims description 17
- 238000006062 fragmentation reaction Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000010298 pulverizing process Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 230000001133 acceleration Effects 0.000 claims description 9
- 238000010849 ion bombardment Methods 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000012634 fragment Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 238000007210 heterogeneous catalysis Methods 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000005865 ionizing radiation Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- -1 nitrogen ions Chemical class 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
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- 238000006555 catalytic reaction Methods 0.000 description 4
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
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- 229910052720 vanadium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 230000009467 reduction Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000010432 diamond Substances 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
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- 239000011888 foil Substances 0.000 description 1
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- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/42—Platinum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
- B01J23/52—Gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/72—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/755—Nickel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
- B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
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- B01D2255/10—Noble metals or compounds thereof
- B01D2255/102—Platinum group metals
- B01D2255/1021—Platinum
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2255/00—Catalysts
- B01D2255/20—Metals or compounds thereof
- B01D2255/207—Transition metals
- B01D2255/20738—Iron
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- B01D—SEPARATION
- B01D2255/00—Catalysts
- B01D2255/20—Metals or compounds thereof
- B01D2255/207—Transition metals
- B01D2255/20753—Nickel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2255/00—Catalysts
- B01D2255/20—Metals or compounds thereof
- B01D2255/207—Transition metals
- B01D2255/20761—Copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2255/00—Catalysts
- B01D2255/90—Physical characteristics of catalysts
- B01D2255/92—Dimensions
- B01D2255/9202—Linear dimensions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/01—Engine exhaust gases
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- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
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- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Catalysts (AREA)
Claims (11)
1. Fremgangsmåde til ionstrålebehandling (100) af et metallag (10) aflejret på et substrat (30) kendetegnet ved, at den omfatter et trin (a) til fragmentering af metallaget, med "fragmentering" menes en fremgangsmåde der gør det muligt at opdele et lag af et materiale for således at fremstille aflejringer af nævnte materiale af laget, isoleret fra hinanden, idet disse aflejringer forekommer på overfladen af substratet og er adskilt af zoner, hvor substratet er fri for nævnte materiale af nævnte lag og hvor: - metallaget (10) har en tykkelse, efrag, omfattet mellem 0,2 nm til 20 nm (nanometer); - ionerne af ionstrålen er valgt fra ionerne af elementerne fra listen bestående af helium (He), bor (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne); - ionaccelerationsspændingen er omfattet mellem 20 kV og 200 kV; - temperaturen på metallaget (10) er mindre end eller lig med Tf/3, hvor Tf er smeltepunktet for metallet af metallaget (10); - iondosen per overfladeenhed er valgt fra et område omfattet mellem 1012 ioner/cm2 og 1018 ioner/cm2 for således at fragmentere metallaget (10) for at fremstille metalaflejringer (40) i form af nanopartikler på overfladen af substratet, hvor den maksimale tykkelse af disse er omfattet mellem 0,2 nm og 20 nm, og den maksimale bredde er omfattet mellem 0,2 nm og 100 nm.
2. Fremgangsmåde ifølge det foregående krav kendetegnet ved, at iondosen per overfladeenhed er omfattet mellem 1014 ioner/cm2 og 1017 ioner/cm2.
3. Fremgangsmåde ifølge et hvilket som helst af de foregående krav kendetegnet ved, at tykkelsen af metallaget (10), efrag, er omfattet mellem 1 nm og 10 nm.
4. Fremgangsmåde ifølge et hvilket som helst af de foregående krav kendetegnet ved, at fremgangsmåden også omfatter et trin (aa) til pulverisering af metallaget, før trinnet (a) til fragmentering af metallaget, bestående af at reducere den indledende tykkelse, epuiv + efrag, af et metallag (20, 10) aflejret på substratet (20) ved ionbombardement indtil laget når tykkelsen efrag.
5. Fremgangsmåde ifølge det foregående krav kendetegnet ved, at ionaccelerationsspændingen i trin (aa) til pulverisering af metallaget er omfattet mellem 5 kV og 20 kV.
6. Fremgangsmåde ifølge et hvilket som helst af de foregående krav kendetegnet ved, at substratet (30) og metallaget (10, 20) er bevægelige i forhold til ionstrålen (100) med en hastighed, Vd, omfattet mellem 0,1 mm/s og 1000 mm/s, og hvor den samme zone af metallaget (10, 20) kan flyttes under ionstrålen (100) i en flerhed, N, af passager ved hastighed Vd.
7. Fremgangsmåde ifølge et hvilket som helst af de foregående krav kendetegnet ved, at trinnet til valg af iondosen per overfladeenhed til at fragmentere metallaget (10) for at fremstille metalaflejringer (40) udføres under anvendelse af tidligere opnåede data, der gør det muligt at vise udviklingen af dækningsgraden af et metallag som en funktion af iondosen per overfladeenhed.
8. Fremgangsmåde ifølge det foregående krav kendetegnet ved, at de data, der gør det muligt at vise udviklingen af dækningsgraden, er baseret på eksperimentelle målinger af dækningsgraden af et metallag opnået ved røntgenfotoelektronspektroskopi (XPS).
9. Fremgangsmåde ifølge et hvilket som helst af de foregående krav kendetegnet ved, at metallaget (10, 20) består af et metal eller en legering af dette metal, hvor metallet er valgt fra listen bestående afjern (Fe), kobolt (Co), nikkel (Ni), kobber (Cu), ruthenium (Ru), rhodium (Rh), palladium (Pd), sølv (Ag), cerium (Ce), osmium (Os), iridium (Ir), platin (Pt) og guld (Au).
10. Substrat (30) dækket med metalaflejringer (40) i form af nanopartikler på overfladen af substratet, hvor den maksimale tykkelse er omfattet mellem 0,2 nm og 20 nm, og hvor den maksimale bredde er omfattet mellem 0,2 nm og 100 nm, opnået ifølge fremgangsmåden omfattende et trin til fragmentering af et metallag ifølge et hvilket som helst af de foregående krav, hvor metalaflejringerne optager mellem 1% og 90% af overfladen af substratet, og hvor substratet er blotlagt på henholdsvis 99% til 10% af sin overflade, hvor disse aflejringer forekommer på overfladen af substratet og er adskilt af zoner, hvor substratet fri for nævnte materiale af nævnte lag.
11. Heterogen katalyse-indretning omfattende en zone til omdannelse af en gas eller en væske omfattende mindst et substrat (30) dækket med metalaflejringer (40) ifølge det foregående krav.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0950824A FR2941878B1 (fr) | 2009-02-10 | 2009-02-10 | Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat |
| PCT/FR2010/050219 WO2010092297A1 (fr) | 2009-02-10 | 2010-02-10 | Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat |
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| DK2396447T3 true DK2396447T3 (da) | 2019-02-25 |
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| CN (1) | CN102362006B (da) |
| DK (1) | DK2396447T3 (da) |
| ES (1) | ES2706673T3 (da) |
| FR (1) | FR2941878B1 (da) |
| PL (1) | PL2396447T3 (da) |
| SI (1) | SI2396447T1 (da) |
| WO (1) | WO2010092297A1 (da) |
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| WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
| GB201113168D0 (en) | 2011-08-01 | 2011-09-14 | Univ Birmingham | Method for producing particulate clusters |
| FR3009217B1 (fr) * | 2013-08-01 | 2016-10-28 | Quertech | Procede de traitement de poudre a base d'oxyde de cerium |
| EP2876649B1 (en) * | 2013-11-21 | 2017-10-11 | Airbus DS GmbH | Method for manufacturing a charge dissipative surface layer |
| US10612129B2 (en) | 2016-06-28 | 2020-04-07 | Corning Incorporated | Thin glass based article with high resistance to contact damage |
| EP3807444A1 (en) * | 2018-06-12 | 2021-04-21 | AGC Glass Europe | Method for preparing catalytic nanoparticles, catalyst surfaces, and/or catalysts |
| CN113020612A (zh) * | 2021-02-22 | 2021-06-25 | 上海理工大学 | 一种大小连续可调的铜纳米球粒制备方法 |
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| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| EP0902728A1 (en) * | 1996-05-14 | 1999-03-24 | E.I. Du Pont De Nemours And Company | Catalyst compositions of nanoparticulate metal on a refractory support |
| KR20040005977A (ko) * | 2001-05-22 | 2004-01-16 | 인피네온 테크놀로지스 아게 | 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법 |
| US8178165B2 (en) * | 2005-01-21 | 2012-05-15 | The Regents Of The University Of California | Method for fabricating a long-range ordered periodic array of nano-features, and articles comprising same |
| EP1862562A1 (en) * | 2006-05-31 | 2007-12-05 | Mec Company Ltd. | Method for manufacturing substrate, and vapor deposition apparatus used for the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| FR2941878A1 (fr) | 2010-08-13 |
| WO2010092297A1 (fr) | 2010-08-19 |
| FR2941878B1 (fr) | 2011-05-06 |
| SI2396447T1 (sl) | 2019-03-29 |
| ES2706673T3 (es) | 2019-03-29 |
| ZA201105812B (en) | 2012-11-28 |
| EP2396447A1 (fr) | 2011-12-21 |
| CN102362006B (zh) | 2014-01-01 |
| PL2396447T3 (pl) | 2019-04-30 |
| EP2396447B1 (fr) | 2018-10-31 |
| CN102362006A (zh) | 2012-02-22 |
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