DK153429C - Fremgangsmaade til fremstilling af n-doteret silicium ved neutronbestraaling - Google Patents
Fremgangsmaade til fremstilling af n-doteret silicium ved neutronbestraalingInfo
- Publication number
- DK153429C DK153429C DK534978A DK534978A DK153429C DK 153429 C DK153429 C DK 153429C DK 534978 A DK534978 A DK 534978A DK 534978 A DK534978 A DK 534978A DK 153429 C DK153429 C DK 153429C
- Authority
- DK
- Denmark
- Prior art keywords
- neutration
- dotated
- silicone
- procedure
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
- G21G1/00—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes
- G21G1/04—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators
- G21G1/06—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators by neutron irradiation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2753488A DE2753488C2 (de) | 1977-12-01 | 1977-12-01 | Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung |
| DE2753488 | 1977-12-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK534978A DK534978A (da) | 1979-06-02 |
| DK153429B DK153429B (da) | 1988-07-11 |
| DK153429C true DK153429C (da) | 1988-12-27 |
Family
ID=6025036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK534978A DK153429C (da) | 1977-12-01 | 1978-11-29 | Fremgangsmaade til fremstilling af n-doteret silicium ved neutronbestraaling |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4260448A (da) |
| JP (1) | JPS5814066B2 (da) |
| DE (1) | DE2753488C2 (da) |
| DK (1) | DK153429C (da) |
| FR (1) | FR2410871A1 (da) |
| GB (1) | GB2012482B (da) |
| IT (1) | IT1106372B (da) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4836788A (en) * | 1985-11-12 | 1989-06-06 | Sony Corporation | Production of solid-state image pick-up device with uniform distribution of dopants |
| JPS62257723A (ja) * | 1986-04-30 | 1987-11-10 | Toshiba Ceramics Co Ltd | シリコンウエ−ハの製造方法 |
| DE3714357C2 (de) * | 1986-04-30 | 1994-02-03 | Toshiba Ceramics Co | Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung |
| JP2572051B2 (ja) * | 1986-12-03 | 1997-01-16 | 東芝セラミツクス株式会社 | エピタキシャル成長用シリコンウェーハ及びその製造方法 |
| US4857259A (en) * | 1986-05-16 | 1989-08-15 | Westinghouse Electric Corp. | Neutron dosimeter |
| JPH02149362U (da) * | 1989-05-24 | 1990-12-19 | ||
| US6034408A (en) * | 1998-05-14 | 2000-03-07 | International Business Machines Corporation | Solid state thermal switch |
| KR20010070619A (ko) * | 2001-05-28 | 2001-07-27 | 류근걸 | 중성자 변환 도핑을 위한 저항 안정화 열처리 기술 |
| US6964917B2 (en) * | 2003-04-08 | 2005-11-15 | Cree, Inc. | Semi-insulating silicon carbide produced by Neutron transmutation doping |
| US6974720B2 (en) * | 2003-10-16 | 2005-12-13 | Cree, Inc. | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL258192A (da) * | 1959-12-15 | |||
| US3255050A (en) * | 1962-03-23 | 1966-06-07 | Carl N Klahr | Fabrication of semiconductor devices by transmutation doping |
| DE1948884B2 (de) * | 1969-09-27 | 1971-09-30 | Verfahren zum beseitigen von inversionsschichten | |
| DE2356376A1 (de) * | 1973-11-12 | 1975-05-15 | Siemens Ag | Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung |
| DE2362264B2 (de) * | 1973-12-14 | 1977-11-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen |
| DE2433991A1 (de) * | 1974-07-15 | 1976-02-05 | Siemens Ag | Verfahren zum dotieren einer halbleiterschicht |
| DE2519663A1 (de) * | 1975-05-02 | 1976-11-11 | Siemens Ag | Verfahren zum herstellen von direkt-beheizbaren siliciumrohren |
| DE2552621C3 (de) * | 1975-11-24 | 1979-09-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes |
| US4129463A (en) * | 1977-06-29 | 1978-12-12 | The United States Of America As Represented By The United States Department Of Energy | Polycrystalline silicon semiconducting material by nuclear transmutation doping |
-
1977
- 1977-12-01 DE DE2753488A patent/DE2753488C2/de not_active Expired
-
1978
- 1978-03-23 US US05/889,172 patent/US4260448A/en not_active Expired - Lifetime
- 1978-10-18 JP JP53127443A patent/JPS5814066B2/ja not_active Expired
- 1978-11-29 DK DK534978A patent/DK153429C/da not_active IP Right Cessation
- 1978-11-29 IT IT52132/78A patent/IT1106372B/it active
- 1978-11-30 FR FR7833794A patent/FR2410871A1/fr active Granted
- 1978-12-01 GB GB7846933A patent/GB2012482B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2410871A1 (fr) | 1979-06-29 |
| JPS5814066B2 (ja) | 1983-03-17 |
| FR2410871B1 (da) | 1982-12-10 |
| IT1106372B (it) | 1985-11-11 |
| DE2753488C2 (de) | 1986-06-19 |
| DK534978A (da) | 1979-06-02 |
| GB2012482B (en) | 1982-05-06 |
| US4260448A (en) | 1981-04-07 |
| DK153429B (da) | 1988-07-11 |
| DE2753488A1 (de) | 1979-06-07 |
| GB2012482A (en) | 1979-07-25 |
| IT7852132A0 (it) | 1978-11-29 |
| JPS5477063A (en) | 1979-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PBP | Patent lapsed |