DK142668B - Apparat til omsætning af et fysisk mønster til et elektrisk signal som funktion af tiden. - Google Patents
Apparat til omsætning af et fysisk mønster til et elektrisk signal som funktion af tiden. Download PDFInfo
- Publication number
- DK142668B DK142668B DK214269AA DK214269A DK142668B DK 142668 B DK142668 B DK 142668B DK 214269A A DK214269A A DK 214269AA DK 214269 A DK214269 A DK 214269A DK 142668 B DK142668 B DK 142668B
- Authority
- DK
- Denmark
- Prior art keywords
- electrode
- semiconductor circuit
- recording
- voltage
- circuit element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 45
- 239000004020 conductor Substances 0.000 description 16
- 230000007423 decrease Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 101150041594 soti gene Proteins 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL686805706A NL155155B (nl) | 1968-04-23 | 1968-04-23 | Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin. |
NL6805706 | 1968-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DK142668B true DK142668B (da) | 1980-12-08 |
DK142668C DK142668C (xx) | 1981-08-10 |
Family
ID=19803414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK214269AA DK142668B (da) | 1968-04-23 | 1969-04-18 | Apparat til omsætning af et fysisk mønster til et elektrisk signal som funktion af tiden. |
Country Status (9)
Country | Link |
---|---|
US (1) | US3621283A (xx) |
AT (1) | AT286391B (xx) |
BE (1) | BE731975A (xx) |
DE (1) | DE1917324C3 (xx) |
DK (1) | DK142668B (xx) |
ES (1) | ES366283A1 (xx) |
FR (1) | FR2006763B1 (xx) |
GB (1) | GB1225071A (xx) |
NL (1) | NL155155B (xx) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3918081A (en) * | 1968-04-23 | 1975-11-04 | Philips Corp | Integrated semiconductor device employing charge storage and charge transport for memory or delay line |
US3816769A (en) * | 1969-12-17 | 1974-06-11 | Integrated Photomatrix Ltd | Method and circuit element for the selective charging of a semiconductor diffusion region |
US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
US3789240A (en) * | 1970-10-26 | 1974-01-29 | Rca Corp | Bucket brigade scanning of sensor array |
US4646119A (en) * | 1971-01-14 | 1987-02-24 | Rca Corporation | Charge coupled circuits |
CA948331A (en) * | 1971-03-16 | 1974-05-28 | Michael F. Tompsett | Charge transfer imaging devices |
NL170480C (nl) * | 1971-03-19 | 1982-11-01 | Philips Nv | Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal. |
US3902187A (en) * | 1971-04-01 | 1975-08-26 | Gen Electric | Surface charge storage and transfer devices |
US3890633A (en) * | 1971-04-06 | 1975-06-17 | Rca Corp | Charge-coupled circuits |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
NL165870C (nl) * | 1971-09-16 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
US3746883A (en) * | 1971-10-04 | 1973-07-17 | Rca Corp | Charge transfer circuits |
US3811055A (en) * | 1971-12-13 | 1974-05-14 | Rca Corp | Charge transfer fan-in circuitry |
NL7202070A (xx) * | 1972-02-17 | 1973-08-21 | ||
US3801826A (en) * | 1972-05-12 | 1974-04-02 | Teletype Corp | Input for shift registers |
GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
GB1436110A (en) * | 1972-09-25 | 1976-05-19 | Rca Corp | Circuit for amplifying charge |
US3909803A (en) * | 1972-11-02 | 1975-09-30 | Ibm | Multi-phase CCD shift register optical sensor with high resolution |
US3886359A (en) * | 1974-01-04 | 1975-05-27 | Texas Instruments Inc | Time interval compression address sequentially |
DE2504317B2 (de) * | 1974-09-05 | 1977-09-29 | The General Corp, Kawasaki, Kanagawa (Japan) | Farbfernsehkamera |
JPS53112040A (en) * | 1977-03-11 | 1978-09-30 | Citizen Watch Co Ltd | Shift register circuit |
JPS605108B2 (ja) * | 1977-08-01 | 1985-02-08 | 株式会社日立製作所 | 固体擦像装置 |
US4344001A (en) * | 1978-12-19 | 1982-08-10 | Sony Corporation | Clocking signal drive circuit for charge transfer device |
JPS5597097A (en) * | 1979-01-12 | 1980-07-23 | Sony Corp | Feedback circuit for charge transfer element |
US4468798A (en) * | 1980-10-24 | 1984-08-28 | American Microsystems, Inc. | Dual charge pump envelope generator |
GB2146504A (en) * | 1983-09-09 | 1985-04-17 | Electronic Automation Ltd | Image recording device |
EP0308169B1 (en) * | 1987-09-14 | 1994-12-28 | Fujitsu Limited | Charge injection circuit |
WO1999053687A1 (en) * | 1998-04-10 | 1999-10-21 | Lygent, Inc. | A wide-range, low-voltage active imaging pixel apparatus and method of using the same |
FR2801970B1 (fr) * | 1999-12-07 | 2002-02-15 | St Microelectronics Sa | Capteur magnetique de tres haute sensibilite |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3172043A (en) * | 1961-12-11 | 1965-03-02 | Daniel E Altman | Signal delay utilizing plurality of samplers each comprising switch, amplifier, andstorage element connected serially |
DE1474510B2 (de) * | 1965-12-14 | 1971-11-25 | Siemens AG, 1000 Berlin u. 8000 München | Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme |
US3446973A (en) * | 1966-07-14 | 1969-05-27 | Philco Ford Corp | Shift register directly settable by optical means |
US3390273A (en) * | 1966-08-08 | 1968-06-25 | Fairchild Camera Instr Co | Electronic shutter with gating and storage features |
NL6615058A (xx) * | 1966-10-25 | 1968-04-26 |
-
1968
- 1968-04-23 NL NL686805706A patent/NL155155B/xx unknown
-
1969
- 1969-04-03 DE DE1917324A patent/DE1917324C3/de not_active Expired
- 1969-04-17 US US816954A patent/US3621283A/en not_active Expired - Lifetime
- 1969-04-18 GB GB09855/69A patent/GB1225071A/en not_active Expired
- 1969-04-18 DK DK214269AA patent/DK142668B/da not_active IP Right Cessation
- 1969-04-21 AT AT383269A patent/AT286391B/de not_active IP Right Cessation
- 1969-04-21 ES ES366283A patent/ES366283A1/es not_active Expired
- 1969-04-22 FR FR6912627A patent/FR2006763B1/fr not_active Expired
- 1969-04-23 BE BE731975D patent/BE731975A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2006763B1 (xx) | 1974-02-01 |
AT286391B (de) | 1970-12-10 |
GB1225071A (en) | 1971-03-17 |
ES366283A1 (es) | 1971-03-16 |
DE1917324A1 (de) | 1969-11-20 |
DE1917324B2 (de) | 1975-01-16 |
BE731975A (xx) | 1969-10-23 |
NL6805706A (xx) | 1969-10-27 |
DK142668C (xx) | 1981-08-10 |
DE1917324C3 (de) | 1979-10-25 |
NL155155B (nl) | 1977-11-15 |
US3621283A (en) | 1971-11-16 |
FR2006763A1 (xx) | 1970-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUP | Patent expired |