DK138779C - - Google Patents
Info
- Publication number
- DK138779C DK138779C DK157067A DK157067A DK138779C DK 138779 C DK138779 C DK 138779C DK 157067 A DK157067 A DK 157067A DK 157067 A DK157067 A DK 157067A DK 138779 C DK138779 C DK 138779C
- Authority
- DK
- Denmark
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0104290 | 1966-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK138779B DK138779B (da) | 1978-10-30 |
| DK138779C true DK138779C (da) | 1979-04-09 |
Family
ID=7525764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK157067AA DK138779B (da) | 1966-06-15 | 1967-03-28 | Fremgangsmåde til digelfri zonesmeltning. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3685973A (da) |
| BE (1) | BE699651A (da) |
| DK (1) | DK138779B (da) |
| GB (1) | GB1175449A (da) |
| NL (1) | NL143435B (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
| DE2533858C2 (de) * | 1975-07-29 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum tiegelfreien Zonenschmelzen eines Halbleitermaterialstabes mit in axialer Richtung feststehender Induktionsheizspule |
| DE2538812A1 (de) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | Verfahren zum dotieren von halbleiterstaeben |
| JPS63291888A (ja) * | 1987-05-25 | 1988-11-29 | Shin Etsu Handotai Co Ltd | 半導体単結晶製造装置 |
| US5319670A (en) * | 1992-07-24 | 1994-06-07 | The United States Of America As Represented By The United States Department Of Energy | Velocity damper for electromagnetically levitated materials |
-
1967
- 1967-03-28 DK DK157067AA patent/DK138779B/da unknown
- 1967-06-08 BE BE699651D patent/BE699651A/xx unknown
- 1967-06-12 GB GB27106/67A patent/GB1175449A/en not_active Expired
- 1967-06-15 NL NL676708321A patent/NL143435B/xx unknown
-
1970
- 1970-09-16 US US72878A patent/US3685973A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DK138779B (da) | 1978-10-30 |
| US3685973A (en) | 1972-08-22 |
| DE1519894B2 (de) | 1975-10-09 |
| GB1175449A (en) | 1969-12-23 |
| NL6708321A (da) | 1967-12-18 |
| NL143435B (nl) | 1974-10-15 |
| DE1519894A1 (de) | 1971-01-21 |
| BE699651A (da) | 1967-12-08 |