DK133526C - Lagerkredslob til skifteregister - Google Patents

Lagerkredslob til skifteregister

Info

Publication number
DK133526C
DK133526C DK35671*#A DK35671A DK133526C DK 133526 C DK133526 C DK 133526C DK 35671 A DK35671 A DK 35671A DK 133526 C DK133526 C DK 133526C
Authority
DK
Denmark
Prior art keywords
shift registers
stock cycle
stock
cycle
registers
Prior art date
Application number
DK35671*#A
Other languages
English (en)
Other versions
DK133526B (da
Inventor
W K Hoffman
J W Sumilas
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of DK133526B publication Critical patent/DK133526B/da
Application granted granted Critical
Publication of DK133526C publication Critical patent/DK133526C/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shift Register Type Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DK35671*#A 1970-01-28 1971-01-27 Lagerkredslob til skifteregister DK133526C (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US649670A 1970-01-28 1970-01-28
US649770A 1970-01-28 1970-01-28

Publications (2)

Publication Number Publication Date
DK133526B DK133526B (da) 1976-05-31
DK133526C true DK133526C (da) 1976-10-25

Family

ID=26675706

Family Applications (1)

Application Number Title Priority Date Filing Date
DK35671*#A DK133526C (da) 1970-01-28 1971-01-27 Lagerkredslob til skifteregister

Country Status (7)

Country Link
US (2) US3648065A (da)
BE (1) BE762191A (da)
CH (1) CH510926A (da)
DK (1) DK133526C (da)
FR (1) FR2077378A1 (da)
NL (1) NL7018371A (da)
SE (1) SE372990B (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808458A (en) * 1972-11-30 1974-04-30 Gen Electric Dynamic shift register
US3845324A (en) * 1972-12-22 1974-10-29 Teletype Corp Dual voltage fet inverter circuit with two level biasing
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
US3927334A (en) * 1974-04-11 1975-12-16 Electronic Arrays MOSFET bistrap buffer
SU535010A1 (ru) * 1974-11-29 1978-09-30 Предприятие П/Я Х-5737 Устройство выхода мдп интегральных схем на индикатор
FR2430694A1 (fr) * 1978-07-04 1980-02-01 Thomson Csf Dispositif de lecture d'une quantite de charges electriques, et filtre a transfert de charges muni d'un tel dispositif
JP3195913B2 (ja) * 1996-04-30 2001-08-06 株式会社東芝 半導体集積回路装置
US6212591B1 (en) 1999-04-02 2001-04-03 Cradle Technologies Configurable I/O circuitry defining virtual ports
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3252009A (en) * 1963-10-22 1966-05-17 Rca Corp Pulse sequence generator
US3322974A (en) * 1966-03-14 1967-05-30 Rca Corp Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level
US3518451A (en) * 1967-03-10 1970-06-30 North American Rockwell Gating system for reducing the effects of negative feedback noise in multiphase gating devices
US3524077A (en) * 1968-02-28 1970-08-11 Rca Corp Translating information with multi-phase clock signals

Also Published As

Publication number Publication date
NL7018371A (da) 1971-07-30
BE762191A (fr) 1971-07-01
US3648063A (en) 1972-03-07
FR2077378A1 (da) 1971-10-22
DE2103213A1 (da) 1971-08-05
DE2103213B2 (de) 1972-11-23
CH510926A (de) 1971-07-31
US3648065A (en) 1972-03-07
SE372990B (da) 1975-01-20
DK133526B (da) 1976-05-31

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Legal Events

Date Code Title Description
AHS Application shelved for other reasons than non-payment