CH510926A - Speicherschaltung für Schieberegister - Google Patents
Speicherschaltung für SchieberegisterInfo
- Publication number
- CH510926A CH510926A CH82971A CH82971A CH510926A CH 510926 A CH510926 A CH 510926A CH 82971 A CH82971 A CH 82971A CH 82971 A CH82971 A CH 82971A CH 510926 A CH510926 A CH 510926A
- Authority
- CH
- Switzerland
- Prior art keywords
- storage circuit
- shift registers
- registers
- shift
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Shift Register Type Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US649670A | 1970-01-28 | 1970-01-28 | |
| US649770A | 1970-01-28 | 1970-01-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH510926A true CH510926A (de) | 1971-07-31 |
Family
ID=26675706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH82971A CH510926A (de) | 1970-01-28 | 1971-01-20 | Speicherschaltung für Schieberegister |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US3648063A (de) |
| BE (1) | BE762191A (de) |
| CH (1) | CH510926A (de) |
| DK (1) | DK133526C (de) |
| FR (1) | FR2077378A1 (de) |
| NL (1) | NL7018371A (de) |
| SE (1) | SE372990B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3808458A (en) * | 1972-11-30 | 1974-04-30 | Gen Electric | Dynamic shift register |
| US3845324A (en) * | 1972-12-22 | 1974-10-29 | Teletype Corp | Dual voltage fet inverter circuit with two level biasing |
| US3805095A (en) * | 1972-12-29 | 1974-04-16 | Ibm | Fet threshold compensating bias circuit |
| US3927334A (en) * | 1974-04-11 | 1975-12-16 | Electronic Arrays | MOSFET bistrap buffer |
| SU535010A1 (ru) * | 1974-11-29 | 1978-09-30 | Предприятие П/Я Х-5737 | Устройство выхода мдп интегральных схем на индикатор |
| FR2430694A1 (fr) * | 1978-07-04 | 1980-02-01 | Thomson Csf | Dispositif de lecture d'une quantite de charges electriques, et filtre a transfert de charges muni d'un tel dispositif |
| JP3195913B2 (ja) * | 1996-04-30 | 2001-08-06 | 株式会社東芝 | 半導体集積回路装置 |
| US6212591B1 (en) | 1999-04-02 | 2001-04-03 | Cradle Technologies | Configurable I/O circuitry defining virtual ports |
| US8947158B2 (en) | 2012-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3252009A (en) * | 1963-10-22 | 1966-05-17 | Rca Corp | Pulse sequence generator |
| US3322974A (en) * | 1966-03-14 | 1967-05-30 | Rca Corp | Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level |
| US3518451A (en) * | 1967-03-10 | 1970-06-30 | North American Rockwell | Gating system for reducing the effects of negative feedback noise in multiphase gating devices |
| US3524077A (en) * | 1968-02-28 | 1970-08-11 | Rca Corp | Translating information with multi-phase clock signals |
-
1970
- 1970-01-28 US US6497A patent/US3648063A/en not_active Expired - Lifetime
- 1970-01-28 US US6496A patent/US3648065A/en not_active Expired - Lifetime
- 1970-12-17 NL NL7018371A patent/NL7018371A/xx unknown
-
1971
- 1971-01-19 SE SE7100555A patent/SE372990B/xx unknown
- 1971-01-20 CH CH82971A patent/CH510926A/de not_active IP Right Cessation
- 1971-01-21 FR FR7102570A patent/FR2077378A1/fr not_active Withdrawn
- 1971-01-27 DK DK35671*#A patent/DK133526C/da not_active Application Discontinuation
- 1971-01-28 BE BE762191A patent/BE762191A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2103213B2 (de) | 1972-11-23 |
| DK133526C (da) | 1976-10-25 |
| SE372990B (de) | 1975-01-20 |
| NL7018371A (de) | 1971-07-30 |
| DE2103213A1 (de) | 1971-08-05 |
| BE762191A (fr) | 1971-07-01 |
| US3648063A (en) | 1972-03-07 |
| FR2077378A1 (de) | 1971-10-22 |
| DK133526B (da) | 1976-05-31 |
| US3648065A (en) | 1972-03-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |