DK0846340T3 - Magnetfeltfølsom indretning baseret på en felteffekttransistor - Google Patents

Magnetfeltfølsom indretning baseret på en felteffekttransistor

Info

Publication number
DK0846340T3
DK0846340T3 DK96928346T DK96928346T DK0846340T3 DK 0846340 T3 DK0846340 T3 DK 0846340T3 DK 96928346 T DK96928346 T DK 96928346T DK 96928346 T DK96928346 T DK 96928346T DK 0846340 T3 DK0846340 T3 DK 0846340T3
Authority
DK
Denmark
Prior art keywords
effect transistor
device based
sensitive device
magnetic field
field effect
Prior art date
Application number
DK96928346T
Other languages
English (en)
Inventor
Lars J Stenberg
Original Assignee
Microtronic As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microtronic As filed Critical Microtronic As
Application granted granted Critical
Publication of DK0846340T3 publication Critical patent/DK0846340T3/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DK96928346T 1995-08-24 1996-08-26 Magnetfeltfølsom indretning baseret på en felteffekttransistor DK0846340T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DK094995A DK94995A (da) 1995-08-24 1995-08-24 Magnetfeltsensor
PCT/DK1996/000356 WO1997009742A1 (en) 1995-08-24 1996-08-26 Switched magnetic field sensitive field effect transistor device

Publications (1)

Publication Number Publication Date
DK0846340T3 true DK0846340T3 (da) 2000-11-20

Family

ID=8099321

Family Applications (2)

Application Number Title Priority Date Filing Date
DK094995A DK94995A (da) 1995-08-24 1995-08-24 Magnetfeltsensor
DK96928346T DK0846340T3 (da) 1995-08-24 1996-08-26 Magnetfeltfølsom indretning baseret på en felteffekttransistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DK094995A DK94995A (da) 1995-08-24 1995-08-24 Magnetfeltsensor

Country Status (6)

Country Link
US (1) US5920090A (da)
EP (1) EP0846340B1 (da)
JP (1) JPH11514494A (da)
DE (1) DE69610775T2 (da)
DK (2) DK94995A (da)
WO (1) WO1997009742A1 (da)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7003127B1 (en) 1999-01-07 2006-02-21 Sarnoff Corporation Hearing aid with large diaphragm microphone element including a printed circuit board
US6366678B1 (en) 1999-01-07 2002-04-02 Sarnoff Corporation Microphone assembly for hearing aid with JFET flip-chip buffer
US7072482B2 (en) 2002-09-06 2006-07-04 Sonion Nederland B.V. Microphone with improved sound inlet port
JP2004327525A (ja) * 2003-04-22 2004-11-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7199434B2 (en) * 2003-12-05 2007-04-03 Nanyang Technological University Magnetic field effect transistor, latch and method
EP1830162B1 (en) 2004-12-14 2015-04-01 NTN Corporation Rotation detecting apparatus and bearing provided with same
JP4553714B2 (ja) * 2004-12-14 2010-09-29 Ntn株式会社 回転検出装置および回転検出装置付き軸受
US8000062B2 (en) 2008-12-30 2011-08-16 Hitachi Global Storage Technologies Netherlands B.V. Enhanced magnetoresistance and localized sensitivity by gating in lorentz magnetoresistors
US8712084B2 (en) 2010-12-07 2014-04-29 Sonion Nederland Bv Motor assembly
KR20140134068A (ko) * 2013-05-13 2014-11-21 에스케이하이닉스 주식회사 스핀 트랜지스터 및 이 스핀 트랜지스터를 포함하는 반도체 장치, 메모리 장치, 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1154679A (en) * 1967-03-13 1969-06-11 Ncr Co Magnetic Field Sensing Device.
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US4048648A (en) * 1976-06-30 1977-09-13 International Business Machines Corporation High carrier velocity fet magnetic sensor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US5083174A (en) * 1990-07-31 1992-01-21 The United States Of America As Represented By The Secretary Of The Navy Floating gate magnetic field sensor
EP0530006A1 (en) * 1991-08-26 1993-03-03 Medtronic, Inc. Magnetic field sensor for implantable medical device

Also Published As

Publication number Publication date
JPH11514494A (ja) 1999-12-07
EP0846340B1 (en) 2000-10-25
DK94995A (da) 1997-02-25
DE69610775T2 (de) 2001-03-29
DE69610775D1 (de) 2000-11-30
US5920090A (en) 1999-07-06
WO1997009742A1 (en) 1997-03-13
EP0846340A1 (en) 1998-06-10

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