DEP0036769DA - Arrangement containing a semiconductor - Google Patents

Description

Arrangement containing a semiconductor.

Lately, under the name of "transistor" arrangements have been used to describe the peculiarity of semiconductors.:. _i; , such as 3. Use noise / am ^ for reinforcement purposes.

A prinnip-5ehalt.-iiu of a semiconductor amplifier arrangement is shown in FIG. ₀ 1. Exhale on a small Gei'Jianium disc I ₁ with a constant bias voltage (voltage source S), a signal voltage (ij.isnalsp & mmn & squoile Z) is applied , namely so that the positive pole of the bias voltage source 2 via a contact tip 4; which, for example, has a fine V / ol-fraia thread formed on the Geiraräuaiooerflaeche. The starting circle ,, enthaJ-tard el; .i <.; Yorspannungsquelle, ^ and dan consumer 6 ₅ is connected to the GermaSiumscheibe in the same Vvüise; with him there is a jodcch dor negative pole over a contact tip 7 on the German! L ^ iüberriaeche, The distance between the two contact tips is very small and is in the order of magnitude of ot \? a 0.005 cm. With such an arrangement, amplifier blades can be achieved which roughly correspond to those of a "booster tube".

The manner of operation of the outlined semiconductor-intensifier arrangement has tried to explain in the following way- by the positive one Spite contact stimulates the formation of flaws in the surface layer of the semiconductor. These are spreading from the tip along the surface to all sides:.; and are attracted to the negative tip contact. You ve ^ -> jrn the current iia output rice.

2.3.49
Kch / Sg.

ΡΛ 9/430 / 118b

The one; vir;: u: igsberelch of the positive Kentakt tip is relr, v.;. Mein und J & is in the closest vicinity of the Ζοά tart tip.:. Us this reason assigns uan the negative EontcutspitSG in unuiitGl- ^ rer iiäbCie the positive contact tip, on the other hand, the distance of the contact tips from each other also has an influence on the transferable woman . With a distance of the contact pits of 0.005 ci, the arrangement using veh germanium can be used, for example, up to about 10 MHs. ""

The invention provides further options for the semiconductor arrangement outlined at the beginning.

I _Λ " te i., Rt''cniiie noiJi ji1j.io.cstens a v / pus ^^ poe-i ^ iv pre-" * " ^χ ~ - ^J " · ^I "~~ ^{J 1} ^""ι a · Corresponded to ^ a ^ Mn distance .from the

r, individual contact points from each otherj 'that a selective storage

g il positively biased contact tips

applied jji ^ .fechseisspannungen takes place. The inputs can be such that there is a modulated voltage in the output

IIIn "principle of an arrangement gesnoss the invention, the JJ shows ¹ Ig. C. Gegenuebor the arrangement nccli Fig. 1 is still at least one v / Eiterer. '^ R ice with an on voltage s source B ₃ a Si ^ vlquclle 0' and the positively tensioned Kontalrtspitze 10 g & troten., For all iCraise si: ixi separate pre-tensioning sources provided,

The invention also provides, the input circleSG. and the h gaag circle for 2 ± ψ: build up coaxially and the semiconductor ^ i »3,

disk between the au ^ oneu coaxial system

in fora a S ^

combined input and de: .u coaxially formed from o; e :, i ^ s circle to arrange ulC 'feit to connect the common Kuock conductor conductive M ^ . It will be like that; inductive u :: id capacitive coupling. the circles are widely varied and the arrangement in coaxial journeys can be changed, so that there is also the possibility of changing the arrangement up to z \ i very high frequencies, see below. use.

PA £ / 4SG / il8b

Cq Γί Piguron 3 cjxi - ~ sir *! Embodiments shown., In c.enen the semiconductor wafer ¹ so irish the input circles and do ;: Ausgan &ski'cis is arranged, that the contact points 4, 7 and 10 abut on the same surface side of the semiconductor. The feeds to the contact tips 4 ″ and 10 are designed coaxially, namely with one feed through the inner gate 11 and the other feed through a conical tube surrounding it forms ύοη Imc,!. head 15 of the second coaxial Syει.ι · ms, gas .ic-ixialQ A ^ a2 \; B £? ystem_ and the coaxial output syF / com Ijabon a gornuinsaa ^ / i Rückieiter -14. The semiconductors -. scnüibü 1 r it st bt.i dor.!. usfuehrringf orm according to Fig, 3 concentric in a pie TaIt rleni geraelnsaüien Kueckleiter 14 concentric 'ver; ⁱ indcnd-.i'': i ScheiTi ^; .15. oiü points a bore through which the licintiiubspi Ize of aD;; u3 is gangs circle hindurcligefuenrt ·, Südnss clLo Ao_Lai.:. tspitscn on the same side of the semiconductor ί * ηζ5υ · ·· .ί .'3η 36.1 of.. The embodiment according to FIG. 4 sits on the disk 1 in such a way that its surface is accessible to all of the contact tips.

A completely: oaxial arrangement is shown in FIG. With this anorinun ^ the positively biased contact tips and di-j negative pre-gaspamitö Xontaktspitze on different sides of the Hallleitorsüheibe. DiG semiconductor disk is at least on. This point is kept so thin that the negatively tensioned contact points are still within the effective area of the positively tensioned contact points. Diss can be reached, die'Halbleiterscheibe · that "too. Steadily tapers or eg dadurchj that the \ Lattl-ere dui'ch a Toil of the 'semiconductor wafer by a very ducnne plate and the outer part" according to the center substantially stronger ring part is formed. A very thin layer thickness can be obtained, for example, by ^{evaporating the middle thin toilet of the semiconductor wafer 1} * onto an outer ring-shaped part; _l6 injects or applies in a similar manner.

Aussei- to the Ausfuehrungsbeispielen shown simple arrangements are also series connections of different SystüiHG and also eg push-pull arrangements MOCs ₁ Jlich ·. Then -but by refilling the capacitors in the inside and / or out · - 3e: "care must be taken for a direct current separation. High-frequency adrossors can also be used in the direct current circuits.

Attachments, β patent claims
5 Figvcen

Claims (1)

Patent application ρ J6769 VIlIa / 21a ² D _s 7 «2.50, Descriptive requirement; to be set in place of the third paragraph on page 2 s According to the invention, in addition to the one positively biased contact tip, there is at least one further positively biased contact tip Contact tip arranged at such a distance from the removal contact tip that this tip is still in the area of action of the positively biased contact. The other, positively biased contact tip are voltages of another frequency or one other frequency range such as the first positively biased contact tip. The bias and / or the The distances between the individual contact tips can be dimensioned in such a way that a selective reinforcement of the AC voltages applied to the individual positively biased contact tips are carried out. However, the measurements can also be such that a modulated voltage occurs at the output » ^ρ Α 219566 3/17/50 Patent application ρ 36769 VIIIa / 2ia ² D: 7 · 2 "' New claim 1 An arrangement containing a semiconductor in which a signal voltage is applied via a positively biased contact tip the surface of a semiconductor is fed to a germanium wafer, for example, and via another in the immediate vicinity Negatively biased further contact tip arranged near the first contact tip, the output voltage has been removed, characterized in that in addition to the one positively biased contact tip, at least one further positively biased contact tip is arranged at such a distance from the removal contact tip that it is still in the The area of action of the positively biased contact tip is located and that of the other positively biased contact tip Voltages of a different frequency or a different frequency range than the first positively biased. Contact tip are fed. οι ¹¹ 61798 PA S / 430 / 11Sb claims. ttk over a positively biased, e.g., settact-he of a calble conductor tip of the Ofceri'laeche of a calf lead id bi p ^ niumsche-ibe is suggested and i ^ ebey ^^ ine further negatively pre-stressed "further Kpfifaktspitse arranged in unravelable liaeh.-e of the first K ^ ß * t1itspitze the output voltage aageuoiaraen is _v aacl> H * ie marked that apart from the one positively pretensioned contact point at least one further pos3., fci # pretensioned contact point in a / desjjr'ttchenden ^ Sstanci of the acceptance "contact point is arranged ^ M ^ ß. that the positively pretensioned contact points 3ruijia§iiE". "ersciaiedener "Frequency beaw» different 2 . 'Arrangement via CN I claim ₃ characterized in. That di3 negatively biased contact tip positively biased raeuniLich approximately in the center between the contact tips is angeordn et. Z, arrangement according to patent claim 1 or 2 ₃ characterized by separate bias sources for the positively biased: i ~ th ICoiitaictspitzen, f. 6 \ 4 4. Arrangement according to Jiateäwrens'pr uc.hQS ^ characterized 'by such a leg measurement of the pretension and / or the distances, of the individual contact tips from one another ^ that a selective reinforcement of the positively biased to the individual Contact with sharp points is applied. 5. Arrangement according to <© «* e« tärisprüch |) 3 ^ marked i.e. such a dimensioning of the pretensioning and / or the distances of the individual Koiitakt'spitzen from each other j that a modulated voltage occurs in the output. 4 ^ or -5 ^v in: ihl oil 61798 ΡΛ 9/450 / 113b Arrangement according to one of patent claims 4 to ^> characterized in that d: .o input circuits and the output. ' ¹ ″: they are coaxially constructed and that the semiconductor is arranged, for example in the form of a disk, between the input circles, which are combined to form a coaxial system, and the ^{1 ″} coaxially formed output circuit, and is conductively connected to the common core. Ai>: 'rdnung according Patentansprucb ^ Tj, ¹ characterized in that the Halbleiterscheioe in it is arranged with the gG-meinsauicn outer conductor conductive verbindenden'konzentrischenleitenden disc concentrically example and die.positiv and negative. seated biased contact points on different sides of Kalb'leiterseheiDe, wherein the semiconductor layer is kept as thin at least at this point _5, the negative vcrgespannte contact tip that is still within the Einwirlainijsbüreic '-. iS the positively biased Kontalctspitzen located.