DE959392C - Resistance layer made of amorphous selenium - Google Patents

Resistance layer made of amorphous selenium

Info

Publication number
DE959392C
DE959392C DEZ3945A DEZ0003945A DE959392C DE 959392 C DE959392 C DE 959392C DE Z3945 A DEZ3945 A DE Z3945A DE Z0003945 A DEZ0003945 A DE Z0003945A DE 959392 C DE959392 C DE 959392C
Authority
DE
Germany
Prior art keywords
layer
amorphous selenium
layer thickness
selenium
layer made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEZ3945A
Other languages
German (de)
Inventor
Dipl-Phys Manfred Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeiss Ikon AG
Original Assignee
Zeiss Ikon AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Ikon AG filed Critical Zeiss Ikon AG
Priority to DEZ3945A priority Critical patent/DE959392C/en
Application granted granted Critical
Publication of DE959392C publication Critical patent/DE959392C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)

Description

Aus amorphem Selen bestehende Widerstandsschicht Die Erfindung betrifft eine aus amorphem, vorzugsweise im Vakuum bei Temperaturen unter 5o° C aufgedampftem Selen bestehende Widerstandsschicht eines lichtelektrischen Elements, dessen Widerstand gemäß Patent 898641 durch geeignete Wahl der Schichtdicke auf Röntgenstrahlen ansprechbar gestaltet ist.Resistive Layer Composed of Amorphous Selenium The invention relates to one of amorphous, preferably vapor-deposited in vacuo at temperatures below 5o ° C Selenium existing resistive layer of a photoelectric element, its resistance according to patent 898641 responsive to X-rays by suitable choice of the layer thickness is designed.

Lichtelektrische Selen-Widerstandsschichten besitzen eine hinreichende Empfindlichkeit, wenn ihre Dicke etwa 1 bis 2,u beträgt. Die Ansprechempfindlichkeit auf Röntgenstrahlen ist bei solchen Zellen sehr gering. Sie kann gesteigert werden, wenn die Selenschicht in einer größeren Stärke aufgedampft wird. Eine wesentliche Voraussetzung für die Verwendung derartiger Schichten zum Bau empfindlicher Röntgenbild-Fernseh-Aufnahmeröhren besteht darin, die amorphe Selenschicht optimal zu dimensionieren. Versuche haben .ergeben, daß dafür die Schichtdicke so zu wählen ist, daß sie folgende Gesetzmäßigkeit erfüllt: epd = 2,Ad + r.Selenium photoelectric resistive layers have sufficient sensitivity when their thickness is about 1 to 2 µ. The responsiveness to X-rays in such cells is very poor. It can be increased if the selenium layer is vapor-deposited in a greater thickness. An essential prerequisite for the use of such layers for the construction of sensitive X-ray picture television tubes is to optimally dimension the amorphous selenium layer. Tests have shown that the layer thickness has to be chosen so that it fulfills the following law: epd = 2, Ad + r.

Darin bedeutet ,u den Absorptionskoeffizient der amorphen Selenschicht, der sich aus der Gleichung ,u = i i oo 7,3 -f- i,12 errechnet, wobei @ die Wellenlänge der benutzten Röntgenstrahlung in Angströmeinheiten ist und d die Schichtdicke der amorphen Selenschicht. Für eine Wellenlänge von 0,33 Angström liegt die optimale Schichtdicke danach bei etwa 300 ,u.Therein, u denotes the absorption coefficient of the amorphous selenium layer, which is calculated from the equation, u = ii oo 7.3 -f- i, 12, where @ is the wavelength of the X-ray radiation used in angstrom units and d is the layer thickness of the amorphous selenium layer. For a wavelength of 0.33 Angstroms, the optimal layer thickness is then around 300, u.

Claims (1)

PATENTANSPRUCH: Aus amorphem, vorzugsweise im Vakuum bei Temperaturen unter 5o° C aufgedampftem Selen bestehende Widerstandsschicht eines lichtelektrischen Elements, dessen Widerstand gemäß Patent 898 641 durch geeignete Wahl der Schichtdicke auf Röntgenstrahlen ansprechbar gestaltet ist, gekennzeichnet durch eine derartige Wahl dieser Schichtdicke, daB sie folgende Gesetzmäßigkeit erfüllt: eßd -2,ud -I-1, worin d die Schichtdicke und ,u der Absorptionskoeffizient der Selenschicht bedeuten und ,u sich aus der Gleichung ,u = I ioo #s + i,12 errechnet, wobei A, die Wellenlänge des eingestrahlten Röntgenlichtes in Angströmeinheiten ist. PATENT CLAIM: A resistive layer of a photoelectric element consisting of amorphous selenium, preferably evaporated in a vacuum at temperatures below 50 ° C, whose resistance is designed to be responsive to X-rays according to patent 898,641 through a suitable selection of the layer thickness, characterized by such a selection of this layer thickness that it follows Law meets: eßd -2, ud -I-1, where d is the layer thickness and, u is the absorption coefficient of the selenium layer and u is calculated from the equation, u = I ioo #s + i, 12, where A is the wavelength of the radiated X-ray light is in Angstrom units.
DEZ3945A 1954-01-22 1954-01-22 Resistance layer made of amorphous selenium Expired DE959392C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEZ3945A DE959392C (en) 1954-01-22 1954-01-22 Resistance layer made of amorphous selenium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEZ3945A DE959392C (en) 1954-01-22 1954-01-22 Resistance layer made of amorphous selenium

Publications (1)

Publication Number Publication Date
DE959392C true DE959392C (en) 1957-03-07

Family

ID=7618969

Family Applications (1)

Application Number Title Priority Date Filing Date
DEZ3945A Expired DE959392C (en) 1954-01-22 1954-01-22 Resistance layer made of amorphous selenium

Country Status (1)

Country Link
DE (1) DE959392C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12041796B2 (en) 2016-12-02 2024-07-16 The Research Foundation For The State University Of New York Fused multi-layer amorphous selenium sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12041796B2 (en) 2016-12-02 2024-07-16 The Research Foundation For The State University Of New York Fused multi-layer amorphous selenium sensor

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