DE939100C - Production of semiconductor layers, preferably from germanium or silicon - Google Patents
Production of semiconductor layers, preferably from germanium or siliconInfo
- Publication number
- DE939100C DE939100C DE1953S0032719 DES0032719A DE939100C DE 939100 C DE939100 C DE 939100C DE 1953S0032719 DE1953S0032719 DE 1953S0032719 DE S0032719 A DES0032719 A DE S0032719A DE 939100 C DE939100 C DE 939100C
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- compounds
- melt flow
- germanium
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 229910052732 germanium Inorganic materials 0.000 title claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 8
- 229910052710 silicon Inorganic materials 0.000 title claims description 5
- 239000010703 silicon Substances 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000000370 acceptor Substances 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- 239000010406 cathode material Substances 0.000 claims 1
- 238000005868 electrolysis reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- OBAGQEDTOKNZGZ-UHFFFAOYSA-L [F-].[F-].F.F.F.F.[K+].[GeH5+] Chemical compound [F-].[F-].F.F.F.F.[K+].[GeH5+] OBAGQEDTOKNZGZ-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/14—Single-crystal growth from melt solutions using molten solvents by electrolysis
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrolytic Production Of Metals (AREA)
Description
Herstellung von Halbleiterschichten vorzugsweise aus Germanium oder Silizium Die Erfindung betrifft die Aufgabe, kristallographisch definierte Schichten von halbleitenden Stoffen, wie z. B. Germanium oder Silizium oder Verbindungen bzw. Legierungen von Elementen der 3. und 5. Gruppe des Periodischen Systems, herzustellen, wobei zweckmäßig der Leitfähigkeitstypus wählbar ist.Production of semiconductor layers preferably from germanium or Silicon The invention relates to the object of crystallographically defined layers of semiconducting substances, such as B. germanium or silicon or compounds or To produce alloys of elements of the 3rd and 5th groups of the Periodic Table, the conductivity type can expediently be selected.
Gemäß der Erfindung werden derartige Schichten aus Germanium, Silizium od. dgl. auf leitenden Trägern, gegebenenfalls aus demselben Stoff vom selben oder entgegengesetzten Leitfähigkeitstypus, dadurch niedergeschlagen, daß der Halbleiter aus dem Schmelzfluß geeigneter elektrolytisch reduzierbarer Verbindungen des Halbleiters, vorzugsweise den Alkalihexafluoriden oder den Gemischen dieser mit anderen geeigneten Verbindungen, vorzugsweise den Oxyden des Halbleiters, kathodisch reduziert wird. Der Vorgang geht zweckmäßig in einer geeigneten Schutzatmosphäre oder im Vakuum vor sich.According to the invention, such layers are made of germanium, silicon od. The like. On conductive supports, optionally made of the same material from the same or opposite conductivity type, depressed by the fact that the semiconductor from the melt flow suitable electrolytically reducible compounds of the semiconductor, preferably the alkali hexafluorides or mixtures of these with other suitable ones Compounds, preferably the oxides of the semiconductor, is cathodically reduced. The process expediently takes place in a suitable protective atmosphere or in a vacuum in front of you.
Ausführungsbeispiel: Germanium wird aus einem Schmelzfluß von Kalium-Germaniumhexafluorid mit oder ohne Zusatz von Germaniumdioxyd kathodisch abgeschieden. Der Schmelzpunkt dieser Gemische liegt je nach ihrer Zusammensetzung zwischen 50o und etwa 1300°C. Durch Wahl der Zusammensetzung des Gemisches wird dafür gesorgt, daß ein Schmelzpunkt entsteht, der zweckmäßig wenig unter dem der Ge-Elektrode liegt. Bei dieser Temperatur tritt in Verbindung mit einer geeigneten, durch das Experiment zu ermittelnden Stromstärke die Abscheidung von Germanium in eine für die Verwendung in Richtleitern, Transistoren u. dgl. geeigneten Kristallstruktur ein. Als Kathode dient ein Germaniumkristall, auf dem sich die abgeschiedene Schicht in der gleichen. Qrientierung niederschlägt.Exemplary embodiment: Germanium is made from a melt flow of potassium germanium hexafluoride deposited cathodically with or without the addition of germanium dioxide. The melting point depending on their composition, this mixture is between 50o and about 1300 ° C. By choosing the composition of the mixture it is ensured that a melting point arises, which is expediently little below that of the Ge electrode. At this temperature occurs in connection with a suitable current strength to be determined by the experiment the deposition of germanium in a for use in directional guides, transistors and the like suitable crystal structure. Serves as a cathode a germanium crystal, on which the deposited layer is in the same. Orientation is reflected.
Der Abscheidungsvorgang ist jedoch nicht auf das Ausführungsbeispiel beschränkt. Es kann beispielsweise auch eine Abscheidüng auf einem anderen Träger stattfinden. Der Träger braucht nicht notwendig ein Halbleiber zu sein, sondern kann. auch als eine metallisch leitende Elektrode ausgebildet sein. Durch andere Wahl der Zusammensetzung des Schmelzflusses lassen sich andere Schmelzflußtemperaturen erreichen., wodurch sich wiederum die Form der Kristallorientierung oder die Art der mehr oder weniger kristallinen Abscheidung des Halbleiters beeinflussen läßt.However, the deposition process is not limited to the embodiment limited. For example, it can also be deposited on another carrier occur. The wearer does not need to be a half-body, but rather can. can also be designed as a metallically conductive electrode. Through others Choice of the composition of the melt flow allows other melt flow temperatures achieve., which in turn changes the shape of the crystal orientation or the type the more or less crystalline deposition of the semiconductor can be influenced.
Gemäß einer besonderen Ausbildung des Erfindungsgedankens wird eine Halbleiterschicht des gewünschten Leitfähigkeitstypus elektrolytisch abgeschieden. Dies kann beispielsweise durch Zusatz einer unter den genannten Bedingungen elektrolytisch reduzierbaren Verbindung von Elementen der 3. und/oder 5. Gruppe des Periodischen Systems zum Schmelzfluß geschehen. Dieser. Zusatz erfolgt gemäß einer besonderen Ausbildung des Erfindungsgedankens zu einem oder mehreren bestimmten Zeitpunkten während des Reduktionsvorganges. Hierbei ist darauf zu achten, daß nach Erzeugung eines bestimmten Leitfähigkeststypus durch einen derartigen Zusatz der nächste Zusatz, der einen Wechsel des Leitfähigkeitstyps bewirken soll, so hoch dotiert sein muß, daß der Einfluß des vorhergehenden Zusatzes überkompensiert wird. Auf diese Weise ist es möglich, unter Umständen aus Schichten wechselnden Leitfähigkeitstyps beispielsweise p-n- oder p-n-p- bzw. n-p-n-Schichten herzustellen. Die Anode besteht zweckmäßig aus demselben Material, vorzugsweise Halbleitermaterial, welches elektrolytisch reduziert und an der Kathode abgeschieden werden soll.According to a special embodiment of the inventive concept, a Electrolytically deposited semiconductor layer of the desired conductivity type. This can be done electrolytically, for example, by adding an under the stated conditions reducible compound of elements of the 3rd and / or 5th group of the periodic System to happen to melt flow. This. Addition takes place according to a special Formation of the inventive idea at one or more specific times during the reduction process. It is important to ensure that after generation of a certain type of conductivity, the next addition through such an addition, which should cause a change in conductivity type, must be so highly doped, that the influence of the preceding addition is overcompensated. In this way it is possible, for example, from layers of changing conductivity type under certain circumstances to produce p-n or p-n-p or n-p-n layers. The anode is expedient made of the same material, preferably semiconductor material, which electrolytically is to be reduced and deposited on the cathode.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1953S0032719 DE939100C (en) | 1953-03-22 | 1953-03-22 | Production of semiconductor layers, preferably from germanium or silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1953S0032719 DE939100C (en) | 1953-03-22 | 1953-03-22 | Production of semiconductor layers, preferably from germanium or silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE939100C true DE939100C (en) | 1956-02-16 |
Family
ID=7480940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1953S0032719 Expired DE939100C (en) | 1953-03-22 | 1953-03-22 | Production of semiconductor layers, preferably from germanium or silicon |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE939100C (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE882445C (en) * | 1942-12-28 | 1953-07-09 | Siemens Ag | Process for producing conductive or semiconducting layers |
-
1953
- 1953-03-22 DE DE1953S0032719 patent/DE939100C/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE882445C (en) * | 1942-12-28 | 1953-07-09 | Siemens Ag | Process for producing conductive or semiconducting layers |
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