DE901814C - Process for processing roughened surfaces - Google Patents

Process for processing roughened surfaces

Info

Publication number
DE901814C
DE901814C DE1951L0010060 DEL0010060A DE901814C DE 901814 C DE901814 C DE 901814C DE 1951L0010060 DE1951L0010060 DE 1951L0010060 DE L0010060 A DEL0010060 A DE L0010060A DE 901814 C DE901814 C DE 901814C
Authority
DE
Germany
Prior art keywords
roughened
processing
treated
roughened surfaces
following
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1951L0010060
Other languages
German (de)
Inventor
Dr Phil Werner Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE1951L0010060 priority Critical patent/DE901814C/en
Application granted granted Critical
Publication of DE901814C publication Critical patent/DE901814C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate

Description

B-eder Bearbeitung vorn flächenhaften Materialien, beiispielsweisedurch Sanden; Schleifen oder Feilen, kommt es in der Regel zur Ausbildung von Spitzen. an der Oberfläche dies Materials, die beispielsweise bei &r Verwendung in elektrischen, Anordnungen aller Art zur AusM Idung besonders starker elektrischer Felder führen und somit die elektrische Festigkeit der Anlage beeinträchtigen. Andererseits kann auf d,a;s Aufrauten nicht immer verzichtet werden, da eine binrei@cherndie Haftfähigkeit angesammelter Materialien auf der Fläche oft nur ,diurch Aufrauhen gewährleistet werden kann. Diese Schwierigkeiten treten, insbesondere bei der Herstellung von Trockengleichrichtern auf, bei denn die Trägerelektroden gesandet werden müssen, so daß Spitzenausbildungen in d!-r Trägerelektrode häufig zum elektrischen Durchschlagen und damit zur Minderung oder gar Zerstörung des Gleichrichters beitragen.Either processing of flat materials, for example by Sands; When grinding or filing, points are usually formed. on the surface of this material, which is used, for example, in electrical, All kinds of arrangements lead to the development of particularly strong electric fields and thus impair the electrical stability of the system. On the other hand, can d, a; s roughening is not always dispensed with, since there is a bin-rich adhesive capacity accumulated materials on the surface often only guaranteed by roughening can be. These difficulties arise, especially in the manufacture of Dry rectifiers, because the carrier electrodes have to be sanded, so that tip formations in the carrier electrode often lead to electrical breakdown and thus contribute to the reduction or even destruction of the rectifier.

Bei der Behandlung von: Flächen aus leitendem Material kann es :sich als vorteilhaft erweisen, gegenüber @d'er arideren Anordnung ein solches Potential` zu geben, diaß sie die Elektronen anziehen.When treating: surfaces made of conductive material it can: itself turn out to be advantageous, compared to @ d'er other arrangement such a potential` so that they attract the electrons.

Auch @dde beiderseitige Bearbeitung solcher Flächen ist nach dem Verfahren in einem Arbeitsgang ermöglicht.Also @dde mutual processing of such surfaces is according to the procedure made possible in one operation.

Eine Beschleunigung dier Wirkung ist möglich, wenn die Fl'äc'hen gleichzeitig mit der Beaufschlagung der Elektronienstrahlen auch noch von im Vakuum in geringen Spuren vorhandenen aggressiven Gasen :auf chemischem Wege angegriffen werden. Besonders vorteilhaft ist eis dann, dde nach d!em Verfahren behandielten Flächen einer thermischien Nachbehandlung zu unterziehen.An acceleration of the effect is possible if the surfaces simultaneously with the application of the electron beams also from in a vacuum in small amounts Traces of existing aggressive gases: Can be attacked chemically. Particularly It is advantageous if the surfaces treated according to the method are thermally treated To undergo post-treatment.

So behandelte Flächen eignen sich besonders zur Verwendung als Trägerelektroden für elektrisch unsymmetrisch leitende Systeme. Die Figuren zeigen in zum Teil. schematischer Darstellung eine ;aufgoraarhte Fläche vor und nach der Behandllüng gemäß der Lehre .der Erfindung. In F.ig. i weist ,die Fläche noch eine sehr unregelmäßige Spitzenibilldung auf, welche entsprechen6 Fig.2 durch die Anwendung des beschriebenen Verfahrensherabgesetzt wird und somit; ein elektrisch festeres Ausgangsmaterial ergibt.Areas treated in this way are particularly suitable for use as carrier electrodes for electrically asymmetrically conductive systems. The figures show in part. more schematic Representation of a ruffled area before and after the treatment according to the teaching .the invention. In F.ig. i shows that the surface still has a very irregular tip formation which correspond to 6 Fig. 2 reduced by applying the method described becomes and thus; results in an electrically stronger starting material.

Claims (1)

PATENTANSPRÜCHE: i. Verfahren zum Bearbeiten aufgerauhter Flächen,. .dadurch gekennzeichnet, idiaiß zwecks Herabsetzung dies Rauhigkeitsgrades -die aufge@rauhte Fläche oberflächlich: von einem oder mehreren Elektronenstrahlen beaufschlagt wird. 2@. Verfahren nach Anspruch i für leitende Flächen, dadurch gekennzeichnet, daß sich die Fläche auf einemElektiron en an.ziehenidenPotenti,al gegenüber der übrigen. Anordnung befindet. 3,. Verfahren nach Anspruch i oder 2, dadurch gekennzeichnet, daß beiidle Seiten .dier Fläche behandelt werden. q.. Verfahren nach Anspruch i oder einem der folgenden, @diaadurch gekennzeichnet, daß die Flächen gleichzeitig durch die Anwesenheit geringer Spuren von Gasen auf chemischem Wege behandelt werden. 5. Verfahren nach Anspruch i oder einem dier folgenden, @dadiurch gekennzeichnet, daß die Flächen einer thermischen Nachbehandlung unterzogen werden: 6. Aufgerauhte Flächen, behandelt nach einem Verfahrlen gemäß Anspruch i bis 5, dadurch gekennzeichnet, d'aß sie als Trägerelektrodie für elektrisch unsymmetrisch leitende Systeme verwendet werden.PATENT CLAIMS: i. Process for processing roughened surfaces. Characterized by the fact that in order to reduce this degree of roughness - the roughened surface superficial: impacted by one or more electron beams will. 2 @. Method according to Claim i for conductive surfaces, characterized in that that the surface attracts each other on an electron rest. Arrangement is located. 3 ,. Method according to claim i or 2, characterized in that that both sides of the surface are treated. q .. Method according to claim i or one of the following, @dia characterized in that the surfaces are simultaneously treated chemically by the presence of small traces of gases. 5. The method according to claim i or one of the following, @dadiurch, that the surfaces are subjected to a thermal aftertreatment: 6. Roughened Areas treated according to a process according to claims 1 to 5, characterized in that d'ass it is used as a carrier electrode for electrically asymmetrically conductive systems will.
DE1951L0010060 1951-09-08 1951-09-08 Process for processing roughened surfaces Expired DE901814C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1951L0010060 DE901814C (en) 1951-09-08 1951-09-08 Process for processing roughened surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1951L0010060 DE901814C (en) 1951-09-08 1951-09-08 Process for processing roughened surfaces

Publications (1)

Publication Number Publication Date
DE901814C true DE901814C (en) 1954-01-14

Family

ID=7258274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1951L0010060 Expired DE901814C (en) 1951-09-08 1951-09-08 Process for processing roughened surfaces

Country Status (1)

Country Link
DE (1) DE901814C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1114253B (en) * 1954-11-03 1961-09-28 Standard Elektrik Lorenz Ag Dry rectifier element and rectifier column made from such elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1114253B (en) * 1954-11-03 1961-09-28 Standard Elektrik Lorenz Ag Dry rectifier element and rectifier column made from such elements

Similar Documents

Publication Publication Date Title
DE891113C (en) Process for the production of electrically asymmetrically conductive systems
DE2800180A1 (en) THIN-LAYER ETCHING PROCESS BY PLASMA DECOMPOSITION OF A GAS
DE3586478D1 (en) METHOD FOR PRODUCING AN ISFET AND ISFET PRODUCED BY THIS METHOD.
DE2724082A1 (en) QUARTZ CRYSTAL OSCILLATOR
DE901814C (en) Process for processing roughened surfaces
DE1295113B (en) Apparatus for embossing a pattern on a dielectric sheet material
DE1464525A1 (en) Field effect micro-semiconductor element and process for its manufacture
DE937212C (en) Process for vapor deposition of a dielectric layer on conductive substrates
DE888498C (en) Process for rough-etching the copper oxide layer of dry rectifier disks of the copper oxide type
DE1258235B (en) Process for the production of an edge zone profiling of silicon wafers that increases the blocking voltage strength
DE892538C (en) Process for roughening metallic surfaces in particular
DE2713391C3 (en) Process for the production of a carrier material for printed circuits
DE939220C (en) Process for the production of dry rectifiers, in particular selenium rectifiers with cadmium electrodes
DE820043C (en) Method of manufacturing selenium rectifier plates
DE818965C (en) Reshaping body made of ceramic dielectric material that is electromechanically sensitive to bending or torsion
DE2048451A1 (en) Process for manufacturing a solar cell
DE884386C (en) Process for the production of oxide coatings on metal parts of discharge vessels
DE3125802A1 (en) Process for preparing solderable metal layers with delimited areas on electrical components
DE2801898A1 (en) RF filter using aluminium oxide ceramic plate - has plate fixed to electrode end to suppress noise caused by discharges in IC engine distributor
DE1564849C3 (en) Method for producing a protective layer on a semiconductor body
DE1812193C (en) Process for the production of shaped etched parts from sheet metal
DE1269738B (en) Method for stabilizing semiconductor components
DE2246573A1 (en) STACKED CAPACITOR
DE818380C (en) Process for the production of dry rectifiers of low own capacity or size
DE1496953A1 (en) Manufacturing process for electrical components, especially microcircuits