DE820043C - Method of manufacturing selenium rectifier plates - Google Patents
Method of manufacturing selenium rectifier platesInfo
- Publication number
- DE820043C DE820043C DEP4025A DE820043DA DE820043C DE 820043 C DE820043 C DE 820043C DE P4025 A DEP4025 A DE P4025A DE 820043D A DE820043D A DE 820043DA DE 820043 C DE820043 C DE 820043C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- plates
- electric field
- selenium rectifier
- rectifier plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 17
- 229910052711 selenium Inorganic materials 0.000 title claims description 13
- 239000011669 selenium Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000005684 electric field Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000009189 diving Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
Description
Verfahren zur Herstellung von Selengleichrichterplatten Das Auftragen dünner Schichten, wie sie für Selengleichrichterplatten angestrebt werden, hat man bisher auf verschiedene Weise versucht. Man hat Platten getaucht, man hat Selen durch Pinsel aufgetragen und schließlich hat man auch Selen aufgespritzt. Alle diese Verfahren haben Nachteile und erfüllen insbesondere nicht die Anforderungen, die gerade im Selengleichrichterbau gestellt werden.Method of manufacturing selenium rectifier plates Thinner layers, such as those striven for for selenium rectifier plates, are available tried so far in various ways. You dipped plates, you have selenium applied by brush and finally selenium was also sprayed on. All these Processes have disadvantages and in particular do not meet the requirements that are currently being used in selenium rectifier construction.
Das Tauchen verursacht nicht überall eine gleiche Schichtdicke; ferner ist es sehr schwierig, eine vorher festgelegte Schichtdicke zu erhalten. Das Aufstreichen mit Hilfe eines weichen Pinsels ergibt noch mehr Ungleichheiten in der Auftragungsstärke als das Tauchen. Selbst bei relativ kleinen Platten hat man Schwierigkeiten, Ungleichheiten in der Dicke zu vermeiden. Es ist erst recht hierbei schwierig, eine vorgeschriebene Schichtdicke zu erzielen. Verhältnismäßig günstiger erscheint noch das Spritzverfahren, obwohl es auch hierbei schwierig ist, eine vorgeschriebene Dicke zu erreichen. Vor allem aber bedeutet das Spritzen eine ungeheure Materialverschwendung, weil bei weitem nicht das gesamte verbrauchte Material auf den Flächen niedergeschlagen wird.Immersion does not cause the same layer thickness everywhere; further it is very difficult to obtain a predetermined layer thickness. The spreading with the help of a soft brush results in even more inequalities in the thickness of the application than diving. Even with relatively small plates you have difficulties, inequalities to avoid in thickness. It is all the more difficult to find a prescribed one To achieve layer thickness. The spraying process appears relatively cheaper, although it is difficult to achieve a prescribed thickness even here. before But above all, the spraying means an enormous waste of material, because with by far not all of the material used is deposited on the surfaces.
Für den Selengleichrichterbau liegen besondere schwierige Aufgaben vor. Einerseits soll der Widerstand der Selenschicht möglichst niedrig gehalten und demzufolge die Schichtdicke sehr gering sein, anderseits wird gefordert, daß die Schicht die notwendige Festigkeit gegen die elektrische Spannung aufweist, so daß also eine unbedingt gleichmäßig dichte Auflage notwendig ist, die noch dazu eine genau vorbestimmte Dicke haben soll. Ganz besondere Bedeutung hat hierbei auch die völlige Gleichmäßigkeit der Schichtdicke und Schichtdichte. Es gibt auch andere Anwendungsgebiete in der Elektrotechnik, bei denen eine sehr dünne, möglichst gleichmäßige Deckschicht angestrebt wird, wie z. B. bei Fotozellen. Aber hier würden gewisse Ungleichheiten keine Gefährdung der Brauchbarkeit haben, weil die Deckschicht nicht durch eine verhältnismäßig hohe elektrische Feldstärke beansprucht wird.There are particularly difficult tasks involved in building selenium rectifiers before. On the one hand, the resistance of the selenium layer should be kept as low as possible and consequently the layer thickness must be very small, on the other hand it is required that the layer has the necessary strength against the electrical voltage, so so that an absolutely evenly dense layer is necessary, which is also necessary should have a precisely predetermined thickness. Also has a very special meaning here the complete uniformity of the layer thickness and layer density. There are others Areas of application in electrical engineering, in which a very thin, as uniform as possible Top layer is aimed at, such as B. with photocells. But here would be certain inequalities have no endangerment of the usability, because the top layer is not through a relatively high electric field strength is claimed.
Um die verschiedenen, gerade für den Selengleichrichterbau gestellten Bedingungen zu erfüllen, werden bei einem Verfähren gemäß der Erfindung zur Herstellung von Selengleichrichterplatten die Platten in ein elektrisches Feld gebracht, und Selen wird in kolloidaler Form trocken oder in vorzugsweise wäßriger Dispersion durch das elektrische Feld auf den Platten niedergeschlagen. Die Herstellung eines kolloidalen feinen Selenpulvers oder auch einer Dispersion eines solchen Pulvers, z. B. in Wasser, kann mit bekannten Mitteln oder auch durch Ultraschall bewirkt werden. Es empfehlen sich aber vor allem bei dem trockenen Verfahren, bei dem also kolloidaler Selenstaub durch das elektrische Feld auf den Platten niedergeschlagen wird, besondere Vorsichtsmaßnahmen, um die Luft, welche den Feldraum füllt, von Staub und sonstigen Fremdkörpern freizuhalten. Die ganze Feldanordnung wird zweckmäßig in einem Glaskolben oder in einem mit Fenstern versehenen Gehäuse untergebracht, und die Verbindung mit der Außenluft soll nur durch Filter, zweckmäßig durch ölige Filter, möglich sein, welche nach einmaligem oder mehrmaligem Durchsaugen der Luft sämtliche Unreinigkeiten der Luft an sich binden. Die Erzeugung einer bestimmten Schichtdicke und einer bestimmten Dichte oder Porosität der Schicht kann man in üblicher Weise durch Regelung des elektrischen Feldes, der Zeitdauer und durch die Kornfeinheit des Selenstaubes vorher bestimmen.To the different, just provided for the selenium rectifier construction To meet conditions are in a method according to the invention for production The plates are brought into an electric field by selenium rectifier plates, and Selenium is dry in colloidal form or preferably in an aqueous dispersion deposited on the plates by the electric field. The making of a colloidal fine selenium powder or a dispersion of such a powder, z. B. in water, can be effected by known means or by ultrasound will. However, it is particularly recommended for the dry process, i.e. for the colloidal selenium dust deposited on the plates by the electric field Take special precautions to avoid the air that fills the field space Keep dust and other foreign bodies free. The whole field arrangement becomes appropriate housed in a glass bulb or in a windowed housing, and the connection with the outside air should only be through filters, expediently through oily ones Filters, which can be used after the air has been sucked through once or several times bind all impurities in the air. The generation of a certain Layer thickness and a certain density or porosity of the layer can be in Usually by regulating the electric field, the duration and the Determine the grain fineness of the selenium dust beforehand.
Claims (2)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE820043T | 1949-09-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE820043C true DE820043C (en) | 1951-11-08 |
Family
ID=7359224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEP4025A Expired DE820043C (en) | 1949-09-02 | Method of manufacturing selenium rectifier plates |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE820043C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2234665A1 (en) * | 1973-06-19 | 1975-01-17 | Int Standard Electric Corp |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE508375C (en) * | 1925-12-07 | 1930-09-27 | American Mach & Foundry | Process and device for the production of metal coatings |
DE643474C (en) * | 1935-10-10 | 1937-04-08 | Ludwig Veit | Hand-operated device for sewing machines for producing a hemstitch seam |
DE725286C (en) * | 1938-09-28 | 1942-09-18 | Aeg | Process for the production of the semiconductor layer of selenium dry rectifiers or photocells |
-
0
- DE DEP4025A patent/DE820043C/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE508375C (en) * | 1925-12-07 | 1930-09-27 | American Mach & Foundry | Process and device for the production of metal coatings |
DE643474C (en) * | 1935-10-10 | 1937-04-08 | Ludwig Veit | Hand-operated device for sewing machines for producing a hemstitch seam |
DE725286C (en) * | 1938-09-28 | 1942-09-18 | Aeg | Process for the production of the semiconductor layer of selenium dry rectifiers or photocells |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2234665A1 (en) * | 1973-06-19 | 1975-01-17 | Int Standard Electric Corp |
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