DE69935291D1 - Verfahren zur Optimierung von Metall-CMP-Prozessen - Google Patents

Verfahren zur Optimierung von Metall-CMP-Prozessen

Info

Publication number
DE69935291D1
DE69935291D1 DE69935291T DE69935291T DE69935291D1 DE 69935291 D1 DE69935291 D1 DE 69935291D1 DE 69935291 T DE69935291 T DE 69935291T DE 69935291 T DE69935291 T DE 69935291T DE 69935291 D1 DE69935291 D1 DE 69935291D1
Authority
DE
Germany
Prior art keywords
cmp processes
metal cmp
optimizing metal
optimizing
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935291T
Other languages
English (en)
Other versions
DE69935291T2 (de
Inventor
Karl E Boggs
Chenting Lin
Joachim F Neutzel
Robert Ploessl
Maria Ronay
Florian Schnabel
Jeremy K Stephens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
International Business Machines Corp
Original Assignee
Siemens AG
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, International Business Machines Corp filed Critical Siemens AG
Application granted granted Critical
Publication of DE69935291D1 publication Critical patent/DE69935291D1/de
Publication of DE69935291T2 publication Critical patent/DE69935291T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69935291T 1998-08-18 1999-07-30 Verfahren zur Optimierung von Metall-CMP-Prozessen Expired - Lifetime DE69935291T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US135866 1998-08-18
US09/135,866 US5972787A (en) 1998-08-18 1998-08-18 CMP process using indicator areas to determine endpoint

Publications (2)

Publication Number Publication Date
DE69935291D1 true DE69935291D1 (de) 2007-04-12
DE69935291T2 DE69935291T2 (de) 2007-11-22

Family

ID=22470082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935291T Expired - Lifetime DE69935291T2 (de) 1998-08-18 1999-07-30 Verfahren zur Optimierung von Metall-CMP-Prozessen

Country Status (4)

Country Link
US (1) US5972787A (de)
EP (1) EP0987744B1 (de)
JP (1) JP3125005B1 (de)
DE (1) DE69935291T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL136608A0 (en) * 2000-02-20 2001-06-14 Nova Measuring Instr Ltd Test structure for metal cmp process monitoring
US6741903B1 (en) 2000-06-01 2004-05-25 Adavanced Micro Devices, Inc. Method for relating photolithography overlay target damage and chemical mechanical planarization (CMP) fault detection to CMP tool indentification
US6599173B1 (en) 2000-06-30 2003-07-29 International Business Machines Corporation Method to prevent leaving residual metal in CMP process of metal interconnect
TW491753B (en) * 2000-07-31 2002-06-21 Silicon Valley Group Thermal In-situ method and apparatus for end point detection in chemical mechanical polishing
US7029381B2 (en) * 2000-07-31 2006-04-18 Aviza Technology, Inc. Apparatus and method for chemical mechanical polishing of substrates
US6476921B1 (en) 2000-07-31 2002-11-05 Asml Us, Inc. In-situ method and apparatus for end point detection in chemical mechanical polishing
US6569690B1 (en) * 2000-08-31 2003-05-27 Agere Systems Guardian Corp Monitoring system for determining progress in a fabrication activity
WO2002103776A2 (en) * 2001-06-18 2002-12-27 Advanced Micro Devices, Inc. Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification
US20040038502A1 (en) * 2002-06-26 2004-02-26 Sethuraman Jayashankar Method of detecting chemical mechanical polishing endpoints in thin film head processes
US6970043B2 (en) * 2002-10-29 2005-11-29 Fairchild Semiconductor Corporation Low voltage, low power differential receiver
DE10317747B3 (de) * 2003-04-17 2004-07-22 X-Fab Semiconductor Foundries Ag Verfahren zur Kontrolle des Dickenabtrags von gebondeten Halbleiterscheibenpaaren
US7598098B2 (en) * 2003-04-17 2009-10-06 X-Fab Semiconductor Foundries Ag Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material
US7120989B2 (en) * 2004-02-18 2006-10-17 Headway Technologies, Inc. Process of manufacturing a perpendicular magnetic pole structure
CN103930954B (zh) * 2011-09-30 2017-02-15 唯景公司 改善的光学装置制造
US10236226B2 (en) * 2016-03-15 2019-03-19 Raytheon Company In-situ calibration structures and methods of use in semiconductor processing
CN108788940B (zh) * 2018-06-26 2020-11-13 上海华力微电子有限公司 化学机械研磨设备工艺能力的监控方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5618381A (en) * 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5234868A (en) * 1992-10-29 1993-08-10 International Business Machines Corporation Method for determining planarization endpoint during chemical-mechanical polishing
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JPH08174411A (ja) * 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US5552996A (en) * 1995-02-16 1996-09-03 International Business Machines Corporation Method and system using the design pattern of IC chips in the processing thereof
US5652176A (en) * 1995-02-24 1997-07-29 Motorola, Inc. Method for providing trench isolation and borderless contact
US5660672A (en) * 1995-04-10 1997-08-26 International Business Machines Corporation In-situ monitoring of conductive films on semiconductor wafers
JP3438446B2 (ja) * 1995-05-15 2003-08-18 ソニー株式会社 半導体装置の製造方法
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US5639697A (en) * 1996-01-30 1997-06-17 Vlsi Technology, Inc. Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing
US5663637A (en) * 1996-03-19 1997-09-02 International Business Machines Corporation Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool
US5663797A (en) * 1996-05-16 1997-09-02 Micron Technology, Inc. Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
US5667424A (en) * 1996-09-25 1997-09-16 Chartered Semiconductor Manufacturing Pte Ltd. New chemical mechanical planarization (CMP) end point detection apparatus
US5846882A (en) * 1996-10-03 1998-12-08 Applied Materials, Inc. Endpoint detector for a chemical mechanical polishing system

Also Published As

Publication number Publication date
DE69935291T2 (de) 2007-11-22
EP0987744A1 (de) 2000-03-22
US5972787A (en) 1999-10-26
JP3125005B1 (ja) 2001-01-15
EP0987744B1 (de) 2007-02-28
JP2001077067A (ja) 2001-03-23

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