DE69933017D1 - WELLENLÄNGENUMWANDLUNGSKRISTALL, VERFAHREN und Gerät ZUR ERZEUGUNG VON LASERSTRAHLEN - Google Patents

WELLENLÄNGENUMWANDLUNGSKRISTALL, VERFAHREN und Gerät ZUR ERZEUGUNG VON LASERSTRAHLEN

Info

Publication number
DE69933017D1
DE69933017D1 DE69933017T DE69933017T DE69933017D1 DE 69933017 D1 DE69933017 D1 DE 69933017D1 DE 69933017 T DE69933017 T DE 69933017T DE 69933017 T DE69933017 T DE 69933017T DE 69933017 D1 DE69933017 D1 DE 69933017D1
Authority
DE
Germany
Prior art keywords
laser radiation
wave length
conversion crystal
length conversion
producing laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69933017T
Other languages
English (en)
Other versions
DE69933017T2 (de
Inventor
Takatomo Sasaki
Yusuke Mori
Masashi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08230998A external-priority patent/JP3936466B2/ja
Priority claimed from JP02055099A external-priority patent/JP3936483B2/ja
Priority claimed from JP02296999A external-priority patent/JP4052751B2/ja
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Publication of DE69933017D1 publication Critical patent/DE69933017D1/de
Application granted granted Critical
Publication of DE69933017T2 publication Critical patent/DE69933017T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H01S3/1095—Frequency multiplication, e.g. harmonic generation self doubling, e.g. lasing and frequency doubling by the same active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
DE69933017T 1998-03-27 1999-03-29 WELLENLÄNGENUMWANDLUNGSKRISTALL, VERFAHREN und Gerät ZUR ERZEUGUNG VON LASERSTRAHLEN Expired - Fee Related DE69933017T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP08230998A JP3936466B2 (ja) 1998-03-27 1998-03-27 波長変換結晶
JP8230998 1998-03-27
JP02055099A JP3936483B2 (ja) 1999-01-28 1999-01-28 第２高調波発生用非線形光学結晶
JP2055099 1999-01-28
JP02296999A JP4052751B2 (ja) 1999-01-29 1999-01-29 レーザー光発生装置
JP2296999 1999-01-29
PCT/JP1999/001598 WO1999050709A1 (fr) 1998-03-27 1999-03-29 Cristal de conversion de longueur d'ondes et generation de faisceau laser, et dispositif generateur de rayon laser

Publications (2)

Publication Number Publication Date
DE69933017D1 true DE69933017D1 (de) 2006-10-12
DE69933017T2 DE69933017T2 (de) 2007-03-15

Family

ID=27283092

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933017T Expired - Fee Related DE69933017T2 (de) 1998-03-27 1999-03-29 WELLENLÄNGENUMWANDLUNGSKRISTALL, VERFAHREN und Gerät ZUR ERZEUGUNG VON LASERSTRAHLEN

Country Status (9)

Country Link
US (1) US6551528B1 (de)
EP (1) EP1067426B1 (de)
KR (1) KR100788807B1 (de)
CN (1) CN1188741C (de)
AU (1) AU5264999A (de)
DE (1) DE69933017T2 (de)
IL (1) IL138662A0 (de)
TW (1) TW476018B (de)
WO (1) WO1999050709A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002071143A1 (fr) * 2001-03-02 2002-09-12 Nikon Corporation Dispositif de source lumineuse, dispositifs d'illumination et d'exposition, et procede de production de dispositif
KR100518303B1 (ko) * 2001-03-16 2005-09-30 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 결정 결함 평가 방법
US20060098698A1 (en) * 2004-11-10 2006-05-11 Lightwave Electronics Corporation Frequency-converting lasers with non-linear materials optimized for high power operation
CN101147098A (zh) * 2005-03-25 2008-03-19 松下电器产业株式会社 波长转换元件
US7622851B2 (en) * 2006-01-17 2009-11-24 The Penn State Research Foundation High temperature piezoelectric material
CN102074887A (zh) * 2010-01-13 2011-05-25 山东大学 一种基于掺钕硼酸钙氧钆晶体的自变频固体激光器
US9188834B2 (en) 2011-03-28 2015-11-17 Mitsubishi Electric Corporation Wavelength conversion crystal and wavelength conversion laser device
CN104831353B (zh) * 2015-05-20 2017-12-29 山东大学 一种硼酸钙氧钇钆高温压电晶体切型及在压电领域中的应用
CN105549295B (zh) * 2016-03-14 2019-01-04 山东大学 一种兼具非临界相位匹配倍频、三倍频性能的紫外激光变频器及其工作方法
CN109378691B (zh) * 2018-12-11 2021-06-01 山东大学 一种基于声子带边发射的全固态大功率板条激光器
CN110011169A (zh) * 2019-05-27 2019-07-12 青岛镭视光电科技有限公司 自倍频激光发生装置及激光器
JP7228793B2 (ja) 2019-06-07 2023-02-27 パナソニックＩｐマネジメント株式会社 波長変換デバイス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177752A (en) * 1989-06-30 1993-01-05 Matsushita Electric Industrial Co., Ltd. Optical pulse generator using gain-switched semiconductor laser
FR2730828B1 (fr) * 1995-02-21 1997-04-30 Crismatec Cristaux non lineaires et leurs applications

Also Published As

Publication number Publication date
EP1067426B1 (de) 2006-08-30
AU5264999A (en) 1999-10-18
KR20010071124A (ko) 2001-07-28
CN1295679A (zh) 2001-05-16
EP1067426A4 (de) 2005-02-16
KR100788807B1 (ko) 2007-12-27
TW476018B (en) 2002-02-11
US6551528B1 (en) 2003-04-22
WO1999050709A1 (fr) 1999-10-07
EP1067426A1 (de) 2001-01-10
CN1188741C (zh) 2005-02-09
DE69933017T2 (de) 2007-03-15
IL138662A0 (en) 2001-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee