DE69932374D1 - Indiumbasierte Legierung, seine Verwendung in einem Infrarotwandler und dessen Herstellungsverfahren - Google Patents

Indiumbasierte Legierung, seine Verwendung in einem Infrarotwandler und dessen Herstellungsverfahren

Info

Publication number
DE69932374D1
DE69932374D1 DE69932374T DE69932374T DE69932374D1 DE 69932374 D1 DE69932374 D1 DE 69932374D1 DE 69932374 T DE69932374 T DE 69932374T DE 69932374 T DE69932374 T DE 69932374T DE 69932374 D1 DE69932374 D1 DE 69932374D1
Authority
DE
Germany
Prior art keywords
indium
manufacturing process
based alloy
infrared transducer
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69932374T
Other languages
English (en)
Other versions
DE69932374T2 (de
Inventor
Christian Verie
Dominique Lorans
Michel Poirier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Safran Electronics and Defense SAS
Original Assignee
Sagem Defense Securite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem Defense Securite SA filed Critical Sagem Defense Securite SA
Publication of DE69932374D1 publication Critical patent/DE69932374D1/de
Application granted granted Critical
Publication of DE69932374T2 publication Critical patent/DE69932374T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69932374T 1998-02-26 1999-02-24 Indiumbasierte Legierung, seine Verwendung in einem Infrarotwandler und dessen Herstellungsverfahren Expired - Fee Related DE69932374T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9802344 1998-02-26
FR9802344A FR2775388B1 (fr) 1998-02-26 1998-02-26 Alliage a base d'indium et transducteur infrarouge utilisant un tel alliage

Publications (2)

Publication Number Publication Date
DE69932374D1 true DE69932374D1 (de) 2006-08-31
DE69932374T2 DE69932374T2 (de) 2007-07-12

Family

ID=9523404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932374T Expired - Fee Related DE69932374T2 (de) 1998-02-26 1999-02-24 Indiumbasierte Legierung, seine Verwendung in einem Infrarotwandler und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6274882B1 (de)
EP (1) EP0939447B1 (de)
DE (1) DE69932374T2 (de)
FR (1) FR2775388B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7016595B1 (en) 1999-05-28 2006-03-21 Nikon Corporation Television set capable of controlling external device and image storage controlled by television set
US6887441B2 (en) * 2002-09-30 2005-05-03 The Regents Of The University Of California High resistivity aluminum antimonide radiation detector
JP4086875B2 (ja) * 2003-09-09 2008-05-14 旭化成エレクトロニクス株式会社 赤外線センサｉｃ、赤外線センサ及びその製造方法
US7224041B1 (en) 2003-09-30 2007-05-29 The Regents Of The University Of California Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate
WO2005050722A1 (en) * 2003-11-17 2005-06-02 The Regents Of The University Of California DESIGN AND FABRICATION OF 6.1- Å FAMILY SEMICONDUCTOR DEVICES USING SEMI-INSULATING AlSb SUBSTRATE
US8883548B2 (en) * 2005-12-16 2014-11-11 Lawrence Livermore National Security, Llc Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications
US7544532B2 (en) * 2006-10-17 2009-06-09 Raytheon Company Infrared photodiodes and sensor arrays with improved passivation layers and methods of manufacture
JP5210540B2 (ja) * 2007-05-08 2013-06-12 株式会社日立製作所 半導体レーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
JPS57197877A (en) * 1981-05-29 1982-12-04 Nec Corp Photo detector
US5483088A (en) * 1994-08-12 1996-01-09 S.R.I. International Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
US5577061A (en) * 1994-12-16 1996-11-19 Hughes Aircraft Company Superlattice cladding layers for mid-infrared lasers

Also Published As

Publication number Publication date
EP0939447B1 (de) 2006-07-19
DE69932374T2 (de) 2007-07-12
FR2775388A1 (fr) 1999-08-27
EP0939447A1 (de) 1999-09-01
FR2775388B1 (fr) 2001-12-07
US6274882B1 (en) 2001-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee