DE69911200D1 - Verfahren zum tempern unter druck von lithiumniobat oder lithiumtantalat und so hergestellte lithiumniobat bzw. lithiumtantalat-strukturen - Google Patents

Verfahren zum tempern unter druck von lithiumniobat oder lithiumtantalat und so hergestellte lithiumniobat bzw. lithiumtantalat-strukturen

Info

Publication number
DE69911200D1
DE69911200D1 DE69911200T DE69911200T DE69911200D1 DE 69911200 D1 DE69911200 D1 DE 69911200D1 DE 69911200 T DE69911200 T DE 69911200T DE 69911200 T DE69911200 T DE 69911200T DE 69911200 D1 DE69911200 D1 DE 69911200D1
Authority
DE
Germany
Prior art keywords
lithium
niobate
structures
produced
under pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69911200T
Other languages
English (en)
Other versions
DE69911200T2 (de
Inventor
J Burrows
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of DE69911200D1 publication Critical patent/DE69911200D1/de
Application granted granted Critical
Publication of DE69911200T2 publication Critical patent/DE69911200T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12169—Annealing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/07—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 buffer layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/20—LiNbO3, LiTaO3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69911200T 1998-05-11 1999-05-11 Verfahren zum tempern unter druck von lithiumniobat oder lithiumtantalat und so hergestellte lithiumniobat bzw. lithiumtantalat-strukturen Expired - Fee Related DE69911200T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8494098P 1998-05-11 1998-05-11
US84940P 1998-05-11
PCT/US1999/010394 WO1999063393A2 (en) 1998-05-11 1999-05-11 Method for pressurized annealing of lithium niobate and resulting lithium niobate structures

Publications (2)

Publication Number Publication Date
DE69911200D1 true DE69911200D1 (de) 2003-10-16
DE69911200T2 DE69911200T2 (de) 2004-07-01

Family

ID=22188172

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1078296T Pending DE1078296T1 (de) 1998-05-11 1999-05-11 Verfahren zum tempern unter druck von lithiumniobat und so hergestellte lithiumniobat-strukturen
DE69911200T Expired - Fee Related DE69911200T2 (de) 1998-05-11 1999-05-11 Verfahren zum tempern unter druck von lithiumniobat oder lithiumtantalat und so hergestellte lithiumniobat bzw. lithiumtantalat-strukturen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1078296T Pending DE1078296T1 (de) 1998-05-11 1999-05-11 Verfahren zum tempern unter druck von lithiumniobat und so hergestellte lithiumniobat-strukturen

Country Status (6)

Country Link
US (1) US6770132B1 (de)
EP (1) EP1078296B1 (de)
JP (1) JP2002517780A (de)
AU (1) AU6128599A (de)
DE (2) DE1078296T1 (de)
WO (1) WO1999063393A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6786967B1 (en) 1998-05-11 2004-09-07 California Institute Of Technology Ion exchange waveguides and methods of fabrication
US6567598B1 (en) 1998-05-11 2003-05-20 California Institute Of Technology Titanium-indiffusion waveguides
DE1078296T1 (de) 1998-05-11 2001-09-20 California Institute Of Technology, Pasadena Verfahren zum tempern unter druck von lithiumniobat und so hergestellte lithiumniobat-strukturen
US6518078B2 (en) 1998-09-21 2003-02-11 California Institute Of Technology Articles useful as optical waveguides and method for manufacturing same
US6625368B1 (en) 1999-10-15 2003-09-23 California Institute Of Technology Titanium-indiffusion waveguides and methods of fabrication
JP3640390B2 (ja) * 2002-09-12 2005-04-20 住友大阪セメント株式会社 光変調器
DE102006016201A1 (de) * 2006-04-06 2007-10-11 Deutsche Telekom Ag Behandlung von Kristallen zur Vermeidung optischen Schadens
US8189981B2 (en) * 2009-11-23 2012-05-29 The Aerospace Corporation Stable lithium niobate waveguides, and methods of making and using same
JP6136666B2 (ja) * 2013-07-05 2017-05-31 Tdk株式会社 光導波路および電気光学デバイス

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196963A (en) * 1978-05-30 1980-04-08 Hughes Aircraft Company Method for eliminating Li2 O out-diffusion in LiNbO3 and LiTaO3 waveguide structures
US4640736A (en) * 1980-10-02 1987-02-03 Xerox Corporation Wave guide fabrication method
US4396246A (en) * 1980-10-02 1983-08-02 Xerox Corporation Integrated electro-optic wave guide modulator
EP0478548B1 (de) * 1989-02-01 1998-03-18 The Board Of Trustees Of The Leland Stanford Junior University Verfahren zur steuerung von gegenden von ferroelektrischen polarisationsgebieten in festkoerpern
US5064684A (en) 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation
US5193136A (en) 1989-10-27 1993-03-09 Litton Systems, Inc. Process for making multifunction integrated optics chips having high electro-optic coefficients
US5095518A (en) * 1990-08-10 1992-03-10 The Board Of Trustees Of The Leland Stanford Junior University Integrated optical waveguide utilizing zinc oxide diffused into congruent and magnesium oxide doped lithium niobate crystals
JP3213619B2 (ja) * 1991-02-05 2001-10-02 パイオニア株式会社 光導波路型デバイスの製造方法及び光導波路型デバイス
US5442719A (en) 1993-07-21 1995-08-15 Litton Systems, Inc., A Delaware Corporation Electro-optic waveguides and phase modulators and methods for making them
JPH07120798A (ja) 1993-10-25 1995-05-12 Fuji Photo Film Co Ltd 光波長変換素子の作成方法
CA2133300C (en) 1993-11-01 1999-04-27 Hirotoshi Nagata Optical waveguide device
JP2825056B2 (ja) 1994-02-24 1998-11-18 日本電気株式会社 光制御デバイス
JP2931960B2 (ja) * 1996-07-30 1999-08-09 科学技術庁無機材質研究所長 鉄添加ニオブ酸リチウム単結晶およびその熱処理方法および当該単結晶を含むホログラム応用素子
US5902519A (en) * 1997-03-18 1999-05-11 Northrop Grumman Corproation Process for oxidizing iron-doped lithium niobate
DE1078296T1 (de) 1998-05-11 2001-09-20 California Institute Of Technology, Pasadena Verfahren zum tempern unter druck von lithiumniobat und so hergestellte lithiumniobat-strukturen

Also Published As

Publication number Publication date
AU6128599A (en) 1999-12-20
JP2002517780A (ja) 2002-06-18
US6770132B1 (en) 2004-08-03
DE69911200T2 (de) 2004-07-01
EP1078296A2 (de) 2001-02-28
EP1078296B1 (de) 2003-09-10
DE1078296T1 (de) 2001-09-20
WO1999063393A3 (en) 2000-09-21
WO1999063393A2 (en) 1999-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee