DE69909995D1 - Endpunktbestimmung beim chemisch, mechanischen polieren (cmp) durch bestimmung der höhe des substrathalters - Google Patents
Endpunktbestimmung beim chemisch, mechanischen polieren (cmp) durch bestimmung der höhe des substrathaltersInfo
- Publication number
- DE69909995D1 DE69909995D1 DE69909995T DE69909995T DE69909995D1 DE 69909995 D1 DE69909995 D1 DE 69909995D1 DE 69909995 T DE69909995 T DE 69909995T DE 69909995 T DE69909995 T DE 69909995T DE 69909995 D1 DE69909995 D1 DE 69909995D1
- Authority
- DE
- Germany
- Prior art keywords
- measuring device
- measuring
- substrate holder
- wafer
- planarizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/066,044 US6075606A (en) | 1996-02-16 | 1998-04-24 | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US66044 | 1998-04-24 | ||
PCT/US1999/009016 WO1999056078A1 (en) | 1998-04-24 | 1999-04-26 | Endpoint detection in chemical mechanical polishing (cmp) by substrate holder elevation detection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69909995D1 true DE69909995D1 (de) | 2003-09-04 |
DE69909995T2 DE69909995T2 (de) | 2004-04-15 |
Family
ID=22066907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69909995T Expired - Lifetime DE69909995T2 (de) | 1998-04-24 | 1999-04-26 | Endpunktbestimmung beim chemisch, mechanischen polieren (cmp) durch bestimmung der höhe des substrathalters |
Country Status (8)
Country | Link |
---|---|
US (3) | US6075606A (de) |
EP (1) | EP1073877B1 (de) |
JP (1) | JP2002513138A (de) |
KR (1) | KR100653114B1 (de) |
AT (1) | ATE246343T1 (de) |
AU (1) | AU3761799A (de) |
DE (1) | DE69909995T2 (de) |
WO (1) | WO1999056078A1 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US6266125B1 (en) * | 1998-05-25 | 2001-07-24 | Tokyo Electron Limited | Resist processing method and apparatus |
DE19948797C2 (de) * | 1999-10-11 | 2001-11-08 | Leica Microsystems | Substrathalter und Verwendung des Substrathalters in einem hochgenauen Messgerät |
US6437868B1 (en) * | 1999-10-28 | 2002-08-20 | Agere Systems Guardian Corp. | In-situ automated contactless thickness measurement for wafer thinning |
US6623333B1 (en) * | 1999-12-14 | 2003-09-23 | Texas Instruments Incorporated | System and method for controlling a wafer polishing process |
US6705930B2 (en) * | 2000-01-28 | 2004-03-16 | Lam Research Corporation | System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques |
US6340326B1 (en) | 2000-01-28 | 2002-01-22 | Lam Research Corporation | System and method for controlled polishing and planarization of semiconductor wafers |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6290572B1 (en) | 2000-03-23 | 2001-09-18 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6387289B1 (en) | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6428386B1 (en) | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US20030020889A1 (en) * | 2000-08-02 | 2003-01-30 | Nikon Corporation | Stage unit, measurement unit and measurement method, and exposure apparatus and exposure method |
US6520834B1 (en) | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6447369B1 (en) | 2000-08-30 | 2002-09-10 | Micron Technology, Inc. | Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6517413B1 (en) | 2000-10-25 | 2003-02-11 | Taiwan Semiconductor Manufacturing Company | Method for a copper CMP endpoint detection system |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US6821794B2 (en) * | 2001-10-04 | 2004-11-23 | Novellus Systems, Inc. | Flexible snapshot in endpoint detection |
TW574085B (en) * | 2001-12-27 | 2004-02-01 | Vanguard Int Semiconduct Corp | Device and method for measuring and monitoring polishing pad |
US6939198B1 (en) | 2001-12-28 | 2005-09-06 | Applied Materials, Inc. | Polishing system with in-line and in-situ metrology |
US20030199112A1 (en) | 2002-03-22 | 2003-10-23 | Applied Materials, Inc. | Copper wiring module control |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US6991514B1 (en) | 2003-02-21 | 2006-01-31 | Verity Instruments, Inc. | Optical closed-loop control system for a CMP apparatus and method of manufacture thereof |
US7235806B2 (en) * | 2003-05-16 | 2007-06-26 | Asm America, Inc. | Wafer edge with light sensor |
US6823753B1 (en) * | 2003-05-16 | 2004-11-30 | Asm America, Inc. | Sensor signal transmission from processing system |
KR100505037B1 (ko) * | 2003-08-08 | 2005-07-29 | 삼성전자주식회사 | 기판 두께 측정 장치 및 방법 |
US6896588B2 (en) * | 2003-10-03 | 2005-05-24 | Texas Instruments Incorporated | Chemical mechanical polishing optical endpoint detection |
US6939211B2 (en) * | 2003-10-09 | 2005-09-06 | Micron Technology, Inc. | Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions |
EP1710048B1 (de) * | 2004-01-28 | 2013-06-12 | Nikon Corporation | Polierkissenflächenformmessgerät, verfahren zur verwendung eines polierkissenflächenformmessgeräts, verfahren zum messen des kegelscheitelwinkels eines polierkissens, verfahren zum messen der nuttiefe eines polierkissens, cmp-polierer und verfahren zur herstellung einer halbleitervorrichtung |
US7415317B2 (en) * | 2004-02-25 | 2008-08-19 | Micron Technology, Inc. | Method and system for correlating and combining production and non-production data for analysis |
US7395130B2 (en) * | 2004-02-27 | 2008-07-01 | Micron Technology, Inc. | Method and system for aggregating and combining manufacturing data for analysis |
US7246424B2 (en) * | 2004-04-13 | 2007-07-24 | Seagate Technology Llc | Magnetic devices having magnetic features with CMP stop layers |
US7066788B2 (en) * | 2004-11-10 | 2006-06-27 | Ultra Tec Manufacturing, Inc. | Electronic die positioning device and method |
US7255747B2 (en) * | 2004-12-22 | 2007-08-14 | Sokudo Co., Ltd. | Coat/develop module with independent stations |
JP2007123687A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Seimitsu Co Ltd | 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置 |
JP2008227393A (ja) * | 2007-03-15 | 2008-09-25 | Fujikoshi Mach Corp | ウェーハの両面研磨装置 |
DE102007021659B4 (de) | 2007-05-04 | 2021-10-14 | Nagel Maschinen- Und Werkzeugfabrik Gmbh | Flachschleifverfahren und Flachschleifmaschine |
US20090137187A1 (en) * | 2007-11-21 | 2009-05-28 | Chien-Min Sung | Diagnostic Methods During CMP Pad Dressing and Associated Systems |
KR101489963B1 (ko) * | 2007-12-13 | 2015-02-04 | 한국에이에스엠지니텍 주식회사 | 박막 증착 장치 및 이를 이용한 증착 방법 |
US20090153882A1 (en) * | 2007-12-14 | 2009-06-18 | Thomas Geiler | Measuring Dimensional Parameters of Structures |
GB0800227D0 (en) * | 2008-01-07 | 2008-02-13 | Metryx Ltd | Method of controlling semiconductor device fabrication |
US8273178B2 (en) * | 2008-02-28 | 2012-09-25 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
FR2957456B1 (fr) | 2010-03-10 | 2013-01-04 | Commissariat Energie Atomique | Procede de fabrication d'un substrat comprenant une etape d'amincissement avec arret a detection d'une zone poreuse |
TW201206630A (en) * | 2010-06-30 | 2012-02-16 | Applied Materials Inc | Endpoint control during chemical mechanical polishing by detecting interface between different layers through selectivity change |
US20130017762A1 (en) * | 2011-07-15 | 2013-01-17 | Infineon Technologies Ag | Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine |
DE102012217176A1 (de) * | 2012-09-24 | 2014-03-27 | Evonik Litarion Gmbh | Verfahren zur Ausrichtung eines Lasersensors zu einem Messobjekt |
US9490186B2 (en) * | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US11011353B2 (en) * | 2016-03-29 | 2021-05-18 | Lam Research Corporation | Systems and methods for performing edge ring characterization |
JP6948878B2 (ja) | 2017-08-22 | 2021-10-13 | ラピスセミコンダクタ株式会社 | 半導体製造装置及び半導体基板の研磨方法 |
US11279001B2 (en) * | 2019-02-22 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for monitoring chemical mechanical polishing process |
US11282755B2 (en) | 2019-08-27 | 2022-03-22 | Applied Materials, Inc. | Asymmetry correction via oriented wafer loading |
CN113654472A (zh) * | 2021-10-21 | 2021-11-16 | 江苏汉威电子材料有限公司 | 一种半导体器件测量装置 |
CN115112091A (zh) * | 2022-07-01 | 2022-09-27 | 北京林业大学 | 一种地表高程测量仪应对快速淤积淹埋的方法 |
Family Cites Families (124)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4203799A (en) * | 1975-05-30 | 1980-05-20 | Hitachi, Ltd. | Method for monitoring thickness of epitaxial growth layer on substrate |
US4200395A (en) * | 1977-05-03 | 1980-04-29 | Massachusetts Institute Of Technology | Alignment of diffraction gratings |
JPS56122128A (en) * | 1980-02-29 | 1981-09-25 | Telmec Co Ltd | Positioning system for printing device of semiconductor or the like |
US4358338A (en) * | 1980-05-16 | 1982-11-09 | Varian Associates, Inc. | End point detection method for physical etching process |
US4422764A (en) * | 1980-12-12 | 1983-12-27 | The University Of Rochester | Interferometer apparatus for microtopography |
US4367044A (en) * | 1980-12-31 | 1983-01-04 | International Business Machines Corp. | Situ rate and depth monitor for silicon etching |
US4640002A (en) * | 1982-02-25 | 1987-02-03 | The University Of Delaware | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices |
JPS60127403A (ja) * | 1983-12-13 | 1985-07-08 | Anritsu Corp | 厚み測定装置 |
EP0242407A2 (de) * | 1986-03-26 | 1987-10-28 | Hommelwerke GmbH | Vorrichtung zur Messung kleiner Längen |
US5393624A (en) * | 1988-07-29 | 1995-02-28 | Tokyo Electron Limited | Method and apparatus for manufacturing a semiconductor device |
US4879258A (en) * | 1988-08-31 | 1989-11-07 | Texas Instruments Incorporated | Integrated circuit planarization by mechanical polishing |
EP0396010A3 (de) * | 1989-05-05 | 1991-03-27 | Applied Materials, Inc. | Verfahren und Vorrichtung zur Überwachung der Wachstums- und Ätzgeschwindigkeit von Materialien |
US5020283A (en) | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
USRE34425E (en) | 1990-08-06 | 1993-11-02 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5069002A (en) | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
US5416941A (en) | 1991-07-01 | 1995-05-23 | Kelley Company Inc. | Dockboard having an improved return-to-dock-level mechanism |
US5369488A (en) | 1991-12-10 | 1994-11-29 | Olympus Optical Co., Ltd. | High precision location measuring device wherein a position detector and an interferometer are fixed to a movable holder |
US5240552A (en) | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5220405A (en) * | 1991-12-20 | 1993-06-15 | International Business Machines Corporation | Interferometer for in situ measurement of thin film thickness changes |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5618381A (en) | 1992-01-24 | 1997-04-08 | Micron Technology, Inc. | Multiple step method of chemical-mechanical polishing which minimizes dishing |
US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
US5514245A (en) | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
KR0170244B1 (ko) * | 1992-02-17 | 1999-03-20 | 강진구 | 간섭신호 제거 시스템 |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5314843A (en) | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
TW278212B (de) * | 1992-05-06 | 1996-06-11 | Sumitomo Electric Industries | |
US5232875A (en) | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5540810A (en) | 1992-12-11 | 1996-07-30 | Micron Technology Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
US5433650A (en) * | 1993-05-03 | 1995-07-18 | Motorola, Inc. | Method for polishing a substrate |
US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5486129A (en) | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5413941A (en) * | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5439551A (en) | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5449314A (en) | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5795495A (en) | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
US5461007A (en) * | 1994-06-02 | 1995-10-24 | Motorola, Inc. | Process for polishing and analyzing a layer over a patterned semiconductor substrate |
US5798422A (en) | 1994-08-25 | 1998-08-25 | Mitsui Toatsu Chemicals, Inc. | Aromatic hydroxycarboxylic acid resins and their use |
US5791969A (en) * | 1994-11-01 | 1998-08-11 | Lund; Douglas E. | System and method of automatically polishing semiconductor wafers |
US5643044A (en) * | 1994-11-01 | 1997-07-01 | Lund; Douglas E. | Automatic chemical and mechanical polishing system for semiconductor wafers |
US5698455A (en) | 1995-02-09 | 1997-12-16 | Micron Technologies, Inc. | Method for predicting process characteristics of polyurethane pads |
US6110820A (en) | 1995-06-07 | 2000-08-29 | Micron Technology, Inc. | Low scratch density chemical mechanical planarization process |
US5609718A (en) * | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5655951A (en) | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5658190A (en) | 1995-12-15 | 1997-08-19 | Micron Technology, Inc. | Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5616069A (en) | 1995-12-19 | 1997-04-01 | Micron Technology, Inc. | Directional spray pad scrubber |
US5792709A (en) | 1995-12-19 | 1998-08-11 | Micron Technology, Inc. | High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers |
US5679169A (en) | 1995-12-19 | 1997-10-21 | Micron Technology, Inc. | Method for post chemical-mechanical planarization cleaning of semiconductor wafers |
US5650619A (en) | 1995-12-21 | 1997-07-22 | Micron Technology, Inc. | Quality control method for detecting defective polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5624303A (en) | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5738562A (en) * | 1996-01-24 | 1998-04-14 | Micron Technology, Inc. | Apparatus and method for planar end-point detection during chemical-mechanical polishing |
US5618447A (en) | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US5643048A (en) | 1996-02-13 | 1997-07-01 | Micron Technology, Inc. | Endpoint regulator and method for regulating a change in wafer thickness in chemical-mechanical planarization of semiconductor wafers |
US5777739A (en) | 1996-02-16 | 1998-07-07 | Micron Technology, Inc. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers |
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US5679065A (en) | 1996-02-23 | 1997-10-21 | Micron Technology, Inc. | Wafer carrier having carrier ring adapted for uniform chemical-mechanical planarization of semiconductor wafers |
US5690540A (en) | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5798302A (en) | 1996-02-28 | 1998-08-25 | Micron Technology, Inc. | Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers |
US5910846A (en) | 1996-05-16 | 1999-06-08 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US5663797A (en) | 1996-05-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US5879226A (en) | 1996-05-21 | 1999-03-09 | Micron Technology, Inc. | Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5893754A (en) | 1996-05-21 | 1999-04-13 | Micron Technology, Inc. | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
US5976000A (en) | 1996-05-28 | 1999-11-02 | Micron Technology, Inc. | Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers |
US5645682A (en) | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
US5681423A (en) | 1996-06-06 | 1997-10-28 | Micron Technology, Inc. | Semiconductor wafer for improved chemical-mechanical polishing over large area features |
US5871392A (en) | 1996-06-13 | 1999-02-16 | Micron Technology, Inc. | Under-pad for chemical-mechanical planarization of semiconductor wafers |
US5738567A (en) | 1996-08-20 | 1998-04-14 | Micron Technology, Inc. | Polishing pad for chemical-mechanical planarization of a semiconductor wafer |
US5667424A (en) * | 1996-09-25 | 1997-09-16 | Chartered Semiconductor Manufacturing Pte Ltd. | New chemical mechanical planarization (CMP) end point detection apparatus |
US5795218A (en) | 1996-09-30 | 1998-08-18 | Micron Technology, Inc. | Polishing pad with elongated microcolumns |
US5747386A (en) | 1996-10-03 | 1998-05-05 | Micron Technology, Inc. | Rotary coupling |
US5736427A (en) | 1996-10-08 | 1998-04-07 | Micron Technology, Inc. | Polishing pad contour indicator for mechanical or chemical-mechanical planarization |
US5972792A (en) | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US5830806A (en) | 1996-10-18 | 1998-11-03 | Micron Technology, Inc. | Wafer backing member for mechanical and chemical-mechanical planarization of substrates |
US5782675A (en) | 1996-10-21 | 1998-07-21 | Micron Technology, Inc. | Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5702292A (en) | 1996-10-31 | 1997-12-30 | Micron Technology, Inc. | Apparatus and method for loading and unloading substrates to a chemical-mechanical planarization machine |
US5725417A (en) | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5868896A (en) | 1996-11-06 | 1999-02-09 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US5930699A (en) | 1996-11-12 | 1999-07-27 | Ericsson Inc. | Address retrieval system |
US5855804A (en) | 1996-12-06 | 1999-01-05 | Micron Technology, Inc. | Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints |
US5938801A (en) | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US6062958A (en) | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6331488B1 (en) | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US5934980A (en) | 1997-06-09 | 1999-08-10 | Micron Technology, Inc. | Method of chemical mechanical polishing |
US6271139B1 (en) | 1997-07-02 | 2001-08-07 | Micron Technology, Inc. | Polishing slurry and method for chemical-mechanical polishing |
US6007408A (en) | 1997-08-21 | 1999-12-28 | Micron Technology, Inc. | Method and apparatus for endpointing mechanical and chemical-mechanical polishing of substrates |
US6083085A (en) | 1997-12-22 | 2000-07-04 | Micron Technology, Inc. | Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media |
US5997384A (en) | 1997-12-22 | 1999-12-07 | Micron Technology, Inc. | Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6139402A (en) | 1997-12-30 | 2000-10-31 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6224466B1 (en) | 1998-02-02 | 2001-05-01 | Micron Technology, Inc. | Methods of polishing materials, methods of slowing a rate of material removal of a polishing process |
US6210257B1 (en) | 1998-05-29 | 2001-04-03 | Micron Technology, Inc. | Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6200901B1 (en) | 1998-06-10 | 2001-03-13 | Micron Technology, Inc. | Polishing polymer surfaces on non-porous CMP pads |
US6036586A (en) | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
US6190494B1 (en) | 1998-07-29 | 2001-02-20 | Micron Technology, Inc. | Method and apparatus for electrically endpointing a chemical-mechanical planarization process |
US6323046B1 (en) | 1998-08-25 | 2001-11-27 | Micron Technology, Inc. | Method and apparatus for endpointing a chemical-mechanical planarization process |
US6352466B1 (en) | 1998-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements |
US6124207A (en) | 1998-08-31 | 2000-09-26 | Micron Technology, Inc. | Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries |
US6106351A (en) | 1998-09-02 | 2000-08-22 | Micron Technology, Inc. | Methods of manufacturing microelectronic substrate assemblies for use in planarization processes |
US6191037B1 (en) | 1998-09-03 | 2001-02-20 | Micron Technology, Inc. | Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
US6203407B1 (en) | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
US6039633A (en) | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6250994B1 (en) | 1998-10-01 | 2001-06-26 | Micron Technology, Inc. | Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads |
US6187681B1 (en) | 1998-10-14 | 2001-02-13 | Micron Technology, Inc. | Method and apparatus for planarization of a substrate |
US6184571B1 (en) | 1998-10-27 | 2001-02-06 | Micron Technology, Inc. | Method and apparatus for endpointing planarization of a microelectronic substrate |
US6206759B1 (en) | 1998-11-30 | 2001-03-27 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
US6203413B1 (en) | 1999-01-13 | 2001-03-20 | Micron Technology, Inc. | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6296557B1 (en) | 1999-04-02 | 2001-10-02 | Micron Technology, Inc. | Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6227955B1 (en) | 1999-04-20 | 2001-05-08 | Micron Technology, Inc. | Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6213845B1 (en) | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6287879B1 (en) | 1999-08-11 | 2001-09-11 | Micron Technology, Inc. | Endpoint stabilization for polishing process |
US6261163B1 (en) | 1999-08-30 | 2001-07-17 | Micron Technology, Inc. | Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies |
US6244944B1 (en) | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates |
US6273800B1 (en) | 1999-08-31 | 2001-08-14 | Micron Technology, Inc. | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US6331135B1 (en) | 1999-08-31 | 2001-12-18 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives |
US6206754B1 (en) | 1999-08-31 | 2001-03-27 | Micron Technology, Inc. | Endpoint detection apparatus, planarizing machines with endpointing apparatus, and endpointing methods for mechanical or chemical-mechanical planarization of microelectronic substrate assemblies |
US6238273B1 (en) | 1999-08-31 | 2001-05-29 | Micron Technology, Inc. | Methods for predicting polishing parameters of polishing pads and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization |
US6306008B1 (en) | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6328632B1 (en) | 1999-08-31 | 2001-12-11 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6284660B1 (en) | 1999-09-02 | 2001-09-04 | Micron Technology, Inc. | Method for improving CMP processing |
US6290572B1 (en) | 2000-03-23 | 2001-09-18 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
-
1998
- 1998-04-24 US US09/066,044 patent/US6075606A/en not_active Expired - Lifetime
-
1999
- 1999-04-26 KR KR1020007011815A patent/KR100653114B1/ko not_active IP Right Cessation
- 1999-04-26 AT AT99920030T patent/ATE246343T1/de not_active IP Right Cessation
- 1999-04-26 JP JP2000546193A patent/JP2002513138A/ja active Pending
- 1999-04-26 WO PCT/US1999/009016 patent/WO1999056078A1/en active IP Right Grant
- 1999-04-26 AU AU37617/99A patent/AU3761799A/en not_active Abandoned
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- 1999-04-26 DE DE69909995T patent/DE69909995T2/de not_active Expired - Lifetime
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2000
- 2000-02-08 US US09/500,171 patent/US6301006B1/en not_active Expired - Fee Related
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2001
- 2001-09-06 US US09/948,141 patent/US6628410B2/en not_active Expired - Fee Related
Also Published As
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US6075606A (en) | 2000-06-13 |
AU3761799A (en) | 1999-11-16 |
KR20010071174A (ko) | 2001-07-28 |
EP1073877A1 (de) | 2001-02-07 |
EP1073877B1 (de) | 2003-07-30 |
WO1999056078A1 (en) | 1999-11-04 |
DE69909995T2 (de) | 2004-04-15 |
US6628410B2 (en) | 2003-09-30 |
US6301006B1 (en) | 2001-10-09 |
ATE246343T1 (de) | 2003-08-15 |
US20020071128A1 (en) | 2002-06-13 |
JP2002513138A (ja) | 2002-05-08 |
KR100653114B1 (ko) | 2006-12-04 |
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