DE69841397D1 - Mehrfarbiger Strahlungsdetektor - Google Patents

Mehrfarbiger Strahlungsdetektor

Info

Publication number
DE69841397D1
DE69841397D1 DE69841397T DE69841397T DE69841397D1 DE 69841397 D1 DE69841397 D1 DE 69841397D1 DE 69841397 T DE69841397 T DE 69841397T DE 69841397 T DE69841397 T DE 69841397T DE 69841397 D1 DE69841397 D1 DE 69841397D1
Authority
DE
Germany
Prior art keywords
radiation detector
multicolored
multicolored radiation
detector
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841397T
Other languages
English (en)
Inventor
Michel Wolny
Gerard Destefanis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69841397D1 publication Critical patent/DE69841397D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • H01L27/1465Infrared imagers of the hybrid type
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • H01L27/14652Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/33Transforming infrared radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69841397T 1997-02-07 1998-02-05 Mehrfarbiger Strahlungsdetektor Expired - Lifetime DE69841397D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9701439A FR2759494B1 (fr) 1997-02-07 1997-02-07 Detecteur de rayonnement photonique multicolore

Publications (1)

Publication Number Publication Date
DE69841397D1 true DE69841397D1 (de) 2010-02-04

Family

ID=9503465

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841397T Expired - Lifetime DE69841397D1 (de) 1997-02-07 1998-02-05 Mehrfarbiger Strahlungsdetektor

Country Status (4)

Country Link
US (1) US5981950A (de)
EP (1) EP0859412B1 (de)
DE (1) DE69841397D1 (de)
FR (1) FR2759494B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933471A1 (de) * 1999-07-20 2001-02-01 Daimler Chrysler Ag Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren
GB2354369A (en) * 1999-09-17 2001-03-21 Secr Defence Noise reduced semiconductor photon detectors
WO2002031454A1 (en) 2000-10-13 2002-04-18 Litton Systems, Inc. System and method for generating signals
EP1328964A4 (de) 2000-10-13 2006-09-13 Litton Systems Inc Infrarotstrahlungsdetektoren aus monolithischem bleisalz
JP3675770B2 (ja) * 2002-03-22 2005-07-27 株式会社東芝 熱型赤外線撮像素子
DE10244176A1 (de) * 2002-09-23 2004-04-08 Siemens Ag Bilddetektor für Röntgenstrahlung
US6700699B1 (en) * 2002-12-13 2004-03-02 Raytheon Company Dual color anti-reflection coating
US7592593B2 (en) * 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
US7759644B2 (en) * 2008-03-18 2010-07-20 Drs Rsta, Inc. Spectrally tunable infrared image sensor having multi-band stacked detectors
KR101475464B1 (ko) * 2008-05-09 2014-12-22 삼성전자 주식회사 적층형 이미지 센서
US9136301B2 (en) * 2009-11-12 2015-09-15 Maxchip Electronics Corp. Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same
US8415623B2 (en) * 2010-11-23 2013-04-09 Raytheon Company Processing detector array signals using stacked readout integrated circuits
US9472588B1 (en) 2015-06-19 2016-10-18 International Business Machines Corporation Monolithic visible-infrared focal plane array on silicon
FR3114819B1 (fr) * 2020-10-06 2023-07-14 Pesci Raphael Alliage pour brasure utilisation dans un detecteur d'un tel alliage

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962578A (en) * 1975-02-28 1976-06-08 Aeronutronic Ford Corporation Two-color photoelectric detectors having an integral filter
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
DE3533146A1 (de) * 1985-09-17 1987-03-26 Siemens Ag Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array
US5113076A (en) * 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US5374841A (en) * 1991-12-18 1994-12-20 Texas Instruments Incorporated HgCdTe S-I-S two color infrared detector
US5300777A (en) * 1992-03-26 1994-04-05 Texas Instruments Incorporated Two color infrared detector and method
US5373182A (en) * 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
US5380669A (en) * 1993-02-08 1995-01-10 Santa Barbara Research Center Method of fabricating a two-color detector using LPE crystal growth
FR2713017B1 (fr) * 1993-11-23 1996-01-12 Commissariat Energie Atomique Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur.
US5512750A (en) * 1994-06-03 1996-04-30 Martin Marietta Corporation A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
US5517029A (en) * 1994-06-03 1996-05-14 Martin Marietta Corporation Dual-band IR scanning focal plane assembly having two monolithically integrated linear detector arrays for simultaneous image readout

Also Published As

Publication number Publication date
US5981950A (en) 1999-11-09
FR2759494A1 (fr) 1998-08-14
FR2759494B1 (fr) 1999-03-05
EP0859412B1 (de) 2009-12-23
EP0859412A1 (de) 1998-08-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition