DE69838913D1 - Schutzüberzug für wiederholtes beugungsgitter - Google Patents

Schutzüberzug für wiederholtes beugungsgitter

Info

Publication number
DE69838913D1
DE69838913D1 DE69838913T DE69838913T DE69838913D1 DE 69838913 D1 DE69838913 D1 DE 69838913D1 DE 69838913 T DE69838913 T DE 69838913T DE 69838913 T DE69838913 T DE 69838913T DE 69838913 D1 DE69838913 D1 DE 69838913D1
Authority
DE
Germany
Prior art keywords
protective cover
repeated load
load grid
grid
repeated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69838913T
Other languages
English (en)
Other versions
DE69838913T2 (de
Inventor
Richard G Morton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of DE69838913D1 publication Critical patent/DE69838913D1/de
Publication of DE69838913T2 publication Critical patent/DE69838913T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G02B1/105—
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
DE69838913T 1997-09-29 1998-08-11 Schutzüberzug für wiederholtes beugungsgitter Expired - Lifetime DE69838913T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/939,611 US6162495A (en) 1997-09-29 1997-09-29 Protective overcoat for replicated diffraction gratings
US939611 1997-09-29
PCT/US1998/016697 WO1999016555A1 (en) 1997-09-29 1998-08-11 Protective overcoat for replicated diffraction gratings

Publications (2)

Publication Number Publication Date
DE69838913D1 true DE69838913D1 (de) 2008-02-07
DE69838913T2 DE69838913T2 (de) 2008-04-30

Family

ID=25473455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69838913T Expired - Lifetime DE69838913T2 (de) 1997-09-29 1998-08-11 Schutzüberzug für wiederholtes beugungsgitter

Country Status (8)

Country Link
US (2) US6162495A (de)
EP (1) EP1027172B1 (de)
JP (1) JPH11160513A (de)
KR (1) KR100651636B1 (de)
AU (1) AU8826798A (de)
DE (1) DE69838913T2 (de)
TW (1) TW382069B (de)
WO (1) WO1999016555A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511703B2 (en) * 1997-09-29 2003-01-28 Cymer, Inc. Protective overcoat for replicated diffraction gratings
US6379492B2 (en) * 1998-10-31 2002-04-30 Applied Materials, Inc. Corrosion resistant coating
JP2002098820A (ja) * 2000-09-21 2002-04-05 Nippon Sheet Glass Co Ltd 反射型回折格子
DE10064143A1 (de) * 2000-12-15 2002-06-20 Zeiss Carl Reflexionsminderungsbeschichtung für Ultraviolettlicht bei großen Einfallswinkeln
GB0106050D0 (en) * 2001-03-12 2001-05-02 Suisse Electronique Microtech Polarisers and mass-production method and apparatus for polarisers
DE10126637A1 (de) * 2001-05-31 2002-12-12 Schott Glas Diffraktive optische Elemente aus oder mit Alkalifluoriden und Verfahren zu deren Herstellung
DE10200293B4 (de) * 2002-01-07 2007-12-20 Carl Zeiss Laser Optics Gmbh Optische Anordnung sowie Verfahren zur Herstellung einer solchen
JP4155031B2 (ja) * 2002-03-15 2008-09-24 株式会社豊田中央研究所 基材の表面改質方法及び改質された基材、並びに装置
DE10213088B4 (de) * 2002-03-18 2005-03-10 Fraunhofer Ges Forschung Optisches Element, Verfahren zu seiner Herstellung und zur Bestimmung seiner optischen Eigenschaften
WO2004079410A1 (en) * 2003-01-06 2004-09-16 Polychromix Corporation Diffraction grating having high throughput effiency
US7158553B2 (en) * 2003-02-14 2007-01-02 Lambda Physik Ag Master oscillator/power amplifier excimer laser system with pulse energy and pointing control
US20040183220A1 (en) * 2003-03-18 2004-09-23 Avinash Dalmia Ultra thin layer coating using self-assembled molecules as a separating layer for diffraction grating application
US7070697B2 (en) * 2003-04-14 2006-07-04 Hitachi Global Storage Technologies Netherlands B.V. Methods of making a read sensor with use of a barrier structure for depositing materials
KR100517075B1 (ko) * 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
US7561611B2 (en) 2005-02-03 2009-07-14 Corning Incorporated Extended-lifetime elements for excimer lasers
DE102007032371A1 (de) 2007-07-06 2009-01-15 Carl Zeiss Laser Optics Gmbh Verfahren zum Beschichten eines optischen Bauelements für eine Laseranordnung
JP5219745B2 (ja) * 2007-11-14 2013-06-26 キヤノン株式会社 発光装置
US7821900B2 (en) * 2008-05-15 2010-10-26 Northrop Grumman Systems Corporation Diffractive optical element and method of designing the same
KR101496151B1 (ko) * 2008-06-25 2015-02-27 삼성전자주식회사 산화물 다이오드를 이용한 디스플레이 장치
FR2945159B1 (fr) * 2009-04-29 2016-04-01 Horiba Jobin Yvon Sas Reseau de diffraction metallique en reflexion a haute tenue au flux en regime femtoseconde, systeme comprenant un tel reseau et procede d'amelioration du seuil d'endommagement d'un reseau de diffraction metallique
JP5676929B2 (ja) 2010-06-11 2015-02-25 キヤノン株式会社 回折光学素子、光学系および光学機器
JP5676928B2 (ja) * 2010-06-11 2015-02-25 キヤノン株式会社 回折光学素子、光学系、及び、光学機器
JP6153305B2 (ja) * 2011-10-06 2017-06-28 キヤノン株式会社 エシェル型回折格子の製造方法
DE102011054837A1 (de) 2011-10-26 2013-05-02 Carl Zeiss Laser Optics Gmbh Optisches Element
JP5972100B2 (ja) * 2012-08-13 2016-08-17 キヤノン株式会社 反射型回折素子
CN103255387B (zh) * 2013-03-16 2015-09-16 上海理工大学 一种中阶梯光栅的复制方法
CN110656225A (zh) * 2019-10-05 2020-01-07 章国超 一种锅炉膜式水冷壁局部焊后热处理的柔性加热装置

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Also Published As

Publication number Publication date
TW382069B (en) 2000-02-11
KR100651636B1 (ko) 2006-11-30
AU8826798A (en) 1999-04-23
US6162495A (en) 2000-12-19
US6529321B2 (en) 2003-03-04
WO1999016555A1 (en) 1999-04-08
KR20010030760A (ko) 2001-04-16
EP1027172A1 (de) 2000-08-16
DE69838913T2 (de) 2008-04-30
EP1027172A4 (de) 2006-07-05
US20010003016A1 (en) 2001-06-07
JPH11160513A (ja) 1999-06-18
EP1027172B1 (de) 2007-12-26

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