DE69837258D1 - Ionenquellesteuerungssystem und verfarhen - Google Patents
Ionenquellesteuerungssystem und verfarhenInfo
- Publication number
- DE69837258D1 DE69837258D1 DE69837258T DE69837258T DE69837258D1 DE 69837258 D1 DE69837258 D1 DE 69837258D1 DE 69837258 T DE69837258 T DE 69837258T DE 69837258 T DE69837258 T DE 69837258T DE 69837258 D1 DE69837258 D1 DE 69837258D1
- Authority
- DE
- Germany
- Prior art keywords
- control system
- finish
- ion source
- source control
- charged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000000605 extraction Methods 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/883,696 US5982101A (en) | 1997-06-27 | 1997-06-27 | Charged-particle source, control system, and process using gating to extract the ion beam |
US883696 | 1997-06-27 | ||
PCT/US1998/012915 WO1999000821A1 (en) | 1997-06-27 | 1998-06-22 | Charged-particle source, control system, and process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69837258D1 true DE69837258D1 (de) | 2007-04-19 |
DE69837258T2 DE69837258T2 (de) | 2007-11-15 |
Family
ID=25383145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69837258T Expired - Lifetime DE69837258T2 (de) | 1997-06-27 | 1998-06-22 | Ionenquellesteuerungssystem und verfarhen |
Country Status (7)
Country | Link |
---|---|
US (2) | US5982101A (de) |
EP (1) | EP0992057B1 (de) |
JP (1) | JP2002510428A (de) |
KR (1) | KR20010020537A (de) |
AT (1) | ATE356424T1 (de) |
DE (1) | DE69837258T2 (de) |
WO (1) | WO1999000821A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982101A (en) * | 1997-06-27 | 1999-11-09 | Veeco Instruments, Inc. | Charged-particle source, control system, and process using gating to extract the ion beam |
US6478931B1 (en) | 1999-08-06 | 2002-11-12 | University Of Virginia Patent Foundation | Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom |
US6498444B1 (en) * | 2000-04-10 | 2002-12-24 | Siemens Medical Solutions Usa, Inc. | Computer-aided tuning of charged particle accelerators |
US6554968B1 (en) * | 2000-09-29 | 2003-04-29 | The Regents Of The University Of California | Method for measuring and controlling beam current in ion beam processing |
JP4439169B2 (ja) * | 2002-09-10 | 2010-03-24 | 株式会社アルバック | 真空処理方法及び真空装置 |
WO2004061151A1 (en) * | 2002-12-31 | 2004-07-22 | Cardinal Cg Company | Coater having substrate cleaning device and coating deposition methods employing such coater |
US7183716B2 (en) * | 2003-02-04 | 2007-02-27 | Veeco Instruments, Inc. | Charged particle source and operation thereof |
US20050092253A1 (en) * | 2003-11-04 | 2005-05-05 | Venkat Selvamanickam | Tape-manufacturing system having extended operational capabilites |
EP2003225B1 (de) * | 2006-03-31 | 2016-09-14 | Hoya Corporation | Ionwaffensystem, dampfablagerungsvorrichtung und verfahren zur linsenherstellung |
US9123500B2 (en) * | 2012-03-31 | 2015-09-01 | Fei Company | Automated ion beam idle |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0726198B2 (ja) * | 1986-01-29 | 1995-03-22 | 株式会社日立製作所 | 薄膜形成方法及びその装置 |
JPH01132033A (ja) * | 1987-11-17 | 1989-05-24 | Hitachi Ltd | イオン源及び薄膜形成装置 |
KR0148385B1 (ko) * | 1990-01-30 | 1998-10-15 | 이노우에 키요시 | 이온 발생장치 |
JP3122175B2 (ja) * | 1991-08-05 | 2001-01-09 | 忠弘 大見 | プラズマ処理装置 |
US5449920A (en) * | 1994-04-20 | 1995-09-12 | Northeastern University | Large area ion implantation process and apparatus |
US5556521A (en) * | 1995-03-24 | 1996-09-17 | Sony Corporation | Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source |
US5982101A (en) * | 1997-06-27 | 1999-11-09 | Veeco Instruments, Inc. | Charged-particle source, control system, and process using gating to extract the ion beam |
-
1997
- 1997-06-27 US US08/883,696 patent/US5982101A/en not_active Expired - Lifetime
-
1998
- 1998-06-22 KR KR1019997012367A patent/KR20010020537A/ko not_active Application Discontinuation
- 1998-06-22 EP EP98930440A patent/EP0992057B1/de not_active Expired - Lifetime
- 1998-06-22 DE DE69837258T patent/DE69837258T2/de not_active Expired - Lifetime
- 1998-06-22 JP JP50563099A patent/JP2002510428A/ja active Pending
- 1998-06-22 AT AT98930440T patent/ATE356424T1/de not_active IP Right Cessation
- 1998-06-22 WO PCT/US1998/012915 patent/WO1999000821A1/en active IP Right Grant
-
1999
- 1999-08-09 US US09/371,061 patent/US6225747B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE356424T1 (de) | 2007-03-15 |
EP0992057A1 (de) | 2000-04-12 |
JP2002510428A (ja) | 2002-04-02 |
KR20010020537A (ko) | 2001-03-15 |
WO1999000821A1 (en) | 1999-01-07 |
US6225747B1 (en) | 2001-05-01 |
DE69837258T2 (de) | 2007-11-15 |
EP0992057B1 (de) | 2007-03-07 |
US5982101A (en) | 1999-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2343546B (en) | An ion implanter with deceleration lens assembly | |
DE69621411T2 (de) | Ionenquelle mit geschlossener Elektronendrift | |
DE68921370T2 (de) | Electronzyklotronresonanz-Ionenquelle. | |
DE69408017T2 (de) | Ionen implantierer | |
DE69732822D1 (de) | Lichtstrahl-Steuerungssystem | |
DE69719715D1 (de) | Prozesssteuerungssystem mit asymptotischer selbsteinstellung | |
NO970182D0 (no) | Styresystem med samlingskammer | |
DE69837258D1 (de) | Ionenquellesteuerungssystem und verfarhen | |
DE69015943T2 (de) | Raster-Tunnel-Mikroskop mit Servosteuerungsfunktion. | |
FR2708375B1 (fr) | Procédé et installation de commande d'un utilisateur électromagnétique. | |
DE69004303D1 (de) | Schwenkbetätigungsvorrichtung und Steuerhebel dafür. | |
DE69115122T2 (de) | Magnetisches Bremssystem und Spannungssteuerung unter Verwendung desselben. | |
EP0779081A3 (de) | Strahlapparat für geladene Teilchen und Betriebsverfahren dafür | |
GB2296140B (en) | External power source on/off control system | |
DE68917435T2 (de) | Selbstfokussierkontrollsystem. | |
GB2238904B (en) | Electrostatic multipole lens for charged-particle beam | |
GB9322316D0 (en) | Control calibrant plasmas | |
DE69122526D1 (de) | Ionenstrahl-Steuersystem | |
GB9405153D0 (en) | Permanent magnet focusing system for an electron beam | |
DE69602704T2 (de) | Zyklotron und Regelverfahren dazu | |
DE69227442T2 (de) | Magnetische elektronenlinse und Elektronenmikroskop unter Verwendung derselbe. | |
FR2752446B1 (fr) | Procede de commande optimise d'un actionneur electrofluidique et actionneur le mettant en oeuvre | |
KR940025529U (ko) | 전자빔 제어용 포커스 마그네트 | |
ZA964942B (en) | Electrostatic accelerated-recirculating fusion neutron/proton source | |
AU642918B2 (en) | Exposure control of energy sources |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |