ATE356424T1 - Ionenquellesteuerungssystem und verfarhen - Google Patents

Ionenquellesteuerungssystem und verfarhen

Info

Publication number
ATE356424T1
ATE356424T1 AT98930440T AT98930440T ATE356424T1 AT E356424 T1 ATE356424 T1 AT E356424T1 AT 98930440 T AT98930440 T AT 98930440T AT 98930440 T AT98930440 T AT 98930440T AT E356424 T1 ATE356424 T1 AT E356424T1
Authority
AT
Austria
Prior art keywords
control system
ion source
source control
charged
particle
Prior art date
Application number
AT98930440T
Other languages
English (en)
Inventor
Roger P Fremgen Jr
John Jacob
Alan V Hayes
Victor Kanarov
Edward W Ostan
Abraham J Navy
Emmanuel N Lakios
Genrikh Treyger
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Application granted granted Critical
Publication of ATE356424T1 publication Critical patent/ATE356424T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/022Details
AT98930440T 1997-06-27 1998-06-22 Ionenquellesteuerungssystem und verfarhen ATE356424T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/883,696 US5982101A (en) 1997-06-27 1997-06-27 Charged-particle source, control system, and process using gating to extract the ion beam

Publications (1)

Publication Number Publication Date
ATE356424T1 true ATE356424T1 (de) 2007-03-15

Family

ID=25383145

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98930440T ATE356424T1 (de) 1997-06-27 1998-06-22 Ionenquellesteuerungssystem und verfarhen

Country Status (7)

Country Link
US (2) US5982101A (de)
EP (1) EP0992057B1 (de)
JP (1) JP2002510428A (de)
KR (1) KR20010020537A (de)
AT (1) ATE356424T1 (de)
DE (1) DE69837258T2 (de)
WO (1) WO1999000821A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982101A (en) * 1997-06-27 1999-11-09 Veeco Instruments, Inc. Charged-particle source, control system, and process using gating to extract the ion beam
US6478931B1 (en) 1999-08-06 2002-11-12 University Of Virginia Patent Foundation Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
US6498444B1 (en) * 2000-04-10 2002-12-24 Siemens Medical Solutions Usa, Inc. Computer-aided tuning of charged particle accelerators
US6554968B1 (en) * 2000-09-29 2003-04-29 The Regents Of The University Of California Method for measuring and controlling beam current in ion beam processing
JP4439169B2 (ja) * 2002-09-10 2010-03-24 株式会社アルバック 真空処理方法及び真空装置
WO2004061151A1 (en) * 2002-12-31 2004-07-22 Cardinal Cg Company Coater having substrate cleaning device and coating deposition methods employing such coater
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US20050092253A1 (en) * 2003-11-04 2005-05-05 Venkat Selvamanickam Tape-manufacturing system having extended operational capabilites
EP2003225B1 (de) * 2006-03-31 2016-09-14 Hoya Corporation Ionwaffensystem, dampfablagerungsvorrichtung und verfahren zur linsenherstellung
US9123500B2 (en) * 2012-03-31 2015-09-01 Fei Company Automated ion beam idle

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0726198B2 (ja) * 1986-01-29 1995-03-22 株式会社日立製作所 薄膜形成方法及びその装置
JPH01132033A (ja) * 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置
KR0148385B1 (ko) * 1990-01-30 1998-10-15 이노우에 키요시 이온 발생장치
JP3122175B2 (ja) * 1991-08-05 2001-01-09 忠弘 大見 プラズマ処理装置
US5449920A (en) * 1994-04-20 1995-09-12 Northeastern University Large area ion implantation process and apparatus
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US5982101A (en) * 1997-06-27 1999-11-09 Veeco Instruments, Inc. Charged-particle source, control system, and process using gating to extract the ion beam

Also Published As

Publication number Publication date
DE69837258D1 (de) 2007-04-19
EP0992057A1 (de) 2000-04-12
JP2002510428A (ja) 2002-04-02
KR20010020537A (ko) 2001-03-15
WO1999000821A1 (en) 1999-01-07
US6225747B1 (en) 2001-05-01
DE69837258T2 (de) 2007-11-15
EP0992057B1 (de) 2007-03-07
US5982101A (en) 1999-11-09

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Legal Events

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