DE69834948D1 - Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren - Google Patents
Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und BetriebsverfahrenInfo
- Publication number
- DE69834948D1 DE69834948D1 DE69834948T DE69834948T DE69834948D1 DE 69834948 D1 DE69834948 D1 DE 69834948D1 DE 69834948 T DE69834948 T DE 69834948T DE 69834948 T DE69834948 T DE 69834948T DE 69834948 D1 DE69834948 D1 DE 69834948D1
- Authority
- DE
- Germany
- Prior art keywords
- storage arrangement
- level storage
- operating methods
- corresponding manufacturing
- coulomb blockade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000011017 operating method Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7888—Transistors programmable by two single electrons
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716157A FR2772989B1 (fr) | 1997-12-19 | 1997-12-19 | Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif |
FR9716157 | 1997-12-19 | ||
PCT/FR1998/002768 WO1999033120A1 (fr) | 1997-12-19 | 1998-12-17 | Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/effacement d'un tel dispositif |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834948D1 true DE69834948D1 (de) | 2006-07-27 |
DE69834948T2 DE69834948T2 (de) | 2007-01-25 |
Family
ID=9514839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834948T Expired - Lifetime DE69834948T2 (de) | 1997-12-19 | 1998-12-17 | Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1042818B1 (de) |
JP (1) | JP2001527297A (de) |
DE (1) | DE69834948T2 (de) |
FR (1) | FR2772989B1 (de) |
WO (1) | WO1999033120A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1120836A1 (de) * | 2000-01-28 | 2001-08-01 | STMicroelectronics S.r.l. | Auf einem Halbleiter integrierte Speicherzellenstruktur |
US6320784B1 (en) * | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
JP5016164B2 (ja) * | 2001-02-22 | 2012-09-05 | シャープ株式会社 | メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器 |
FR2943832B1 (fr) | 2009-03-27 | 2011-04-22 | Commissariat Energie Atomique | Procede de realisation d'un dispositif memoire a nanoparticules conductrices |
EP2309562B1 (de) * | 2009-10-12 | 2012-12-05 | Hitachi Ltd. | Ladungsträgervorrichtung |
US10553601B2 (en) | 2017-03-16 | 2020-02-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxide |
US10312239B2 (en) | 2017-03-16 | 2019-06-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxie |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1297899A (de) * | 1970-10-02 | 1972-11-29 | ||
EP0081626B1 (de) * | 1981-12-14 | 1988-10-19 | International Business Machines Corporation | Doppel-Elektroneninjektionsstruktur und Halbleiterspeicheranordnung mit Doppel-Elektroneninjektionsstruktur |
US5731598A (en) * | 1995-06-23 | 1998-03-24 | Matsushita Electric Industrial Co. Ltd. | Single electron tunnel device and method for fabricating the same |
-
1997
- 1997-12-19 FR FR9716157A patent/FR2772989B1/fr not_active Expired - Fee Related
-
1998
- 1998-12-17 DE DE69834948T patent/DE69834948T2/de not_active Expired - Lifetime
- 1998-12-17 JP JP2000525933A patent/JP2001527297A/ja not_active Withdrawn
- 1998-12-17 EP EP98962496A patent/EP1042818B1/de not_active Expired - Lifetime
- 1998-12-17 WO PCT/FR1998/002768 patent/WO1999033120A1/fr active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
FR2772989B1 (fr) | 2003-06-06 |
FR2772989A1 (fr) | 1999-06-25 |
WO1999033120A1 (fr) | 1999-07-01 |
EP1042818A1 (de) | 2000-10-11 |
EP1042818B1 (de) | 2006-06-14 |
DE69834948T2 (de) | 2007-01-25 |
JP2001527297A (ja) | 2001-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |