DE69834948D1 - Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren - Google Patents

Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren

Info

Publication number
DE69834948D1
DE69834948D1 DE69834948T DE69834948T DE69834948D1 DE 69834948 D1 DE69834948 D1 DE 69834948D1 DE 69834948 T DE69834948 T DE 69834948T DE 69834948 T DE69834948 T DE 69834948T DE 69834948 D1 DE69834948 D1 DE 69834948D1
Authority
DE
Germany
Prior art keywords
storage arrangement
level storage
operating methods
corresponding manufacturing
coulomb blockade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69834948T
Other languages
English (en)
Other versions
DE69834948T2 (de
Inventor
Jacques Gautier
Lionel Palun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69834948D1 publication Critical patent/DE69834948D1/de
Publication of DE69834948T2 publication Critical patent/DE69834948T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7888—Transistors programmable by two single electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69834948T 1997-12-19 1998-12-17 Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren Expired - Lifetime DE69834948T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9716157A FR2772989B1 (fr) 1997-12-19 1997-12-19 Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif
FR9716157 1997-12-19
PCT/FR1998/002768 WO1999033120A1 (fr) 1997-12-19 1998-12-17 Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/effacement d'un tel dispositif

Publications (2)

Publication Number Publication Date
DE69834948D1 true DE69834948D1 (de) 2006-07-27
DE69834948T2 DE69834948T2 (de) 2007-01-25

Family

ID=9514839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69834948T Expired - Lifetime DE69834948T2 (de) 1997-12-19 1998-12-17 Coulomb-Blockade-Mehrpegelspeicheranordnung und entsprechende Herstellungs- und Betriebsverfahren

Country Status (5)

Country Link
EP (1) EP1042818B1 (de)
JP (1) JP2001527297A (de)
DE (1) DE69834948T2 (de)
FR (1) FR2772989B1 (de)
WO (1) WO1999033120A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120836A1 (de) * 2000-01-28 2001-08-01 STMicroelectronics S.r.l. Auf einem Halbleiter integrierte Speicherzellenstruktur
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
JP5016164B2 (ja) 2001-02-22 2012-09-05 シャープ株式会社 メモリ膜およびその製造方法、並びにメモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器
FR2943832B1 (fr) 2009-03-27 2011-04-22 Commissariat Energie Atomique Procede de realisation d'un dispositif memoire a nanoparticules conductrices
EP2309562B1 (de) * 2009-10-12 2012-12-05 Hitachi Ltd. Ladungsträgervorrichtung
US10553601B2 (en) 2017-03-16 2020-02-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxide
US10312239B2 (en) 2017-03-16 2019-06-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1297899A (de) * 1970-10-02 1972-11-29
DE3279138D1 (en) * 1981-12-14 1988-11-24 Ibm Dual electron injector structure and semiconductor memory device including a dual electron injector structure
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same

Also Published As

Publication number Publication date
DE69834948T2 (de) 2007-01-25
EP1042818B1 (de) 2006-06-14
WO1999033120A1 (fr) 1999-07-01
FR2772989B1 (fr) 2003-06-06
FR2772989A1 (fr) 1999-06-25
EP1042818A1 (de) 2000-10-11
JP2001527297A (ja) 2001-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition