DE69813832D1 - Vorrichtung und verfahren zur in-situ dicke- und stöchiometriemessung dünner filme - Google Patents

Vorrichtung und verfahren zur in-situ dicke- und stöchiometriemessung dünner filme

Info

Publication number
DE69813832D1
DE69813832D1 DE69813832T DE69813832T DE69813832D1 DE 69813832 D1 DE69813832 D1 DE 69813832D1 DE 69813832 T DE69813832 T DE 69813832T DE 69813832 T DE69813832 T DE 69813832T DE 69813832 D1 DE69813832 D1 DE 69813832D1
Authority
DE
Germany
Prior art keywords
shield
detector
thickness
aperture
stochiometry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69813832T
Other languages
English (en)
Other versions
DE69813832T9 (de
DE69813832T2 (de
Inventor
Itzhak Kelson
Yuval Levy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Columbia Vancouver Bri, University of
Simon Fraser University
Ramot at Tel Aviv University Ltd
Original Assignee
University of British Columbia
Simon Fraser University
Ramot at Tel Aviv University Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of British Columbia, Simon Fraser University, Ramot at Tel Aviv University Ltd filed Critical University of British Columbia
Publication of DE69813832D1 publication Critical patent/DE69813832D1/de
Application granted granted Critical
Publication of DE69813832T2 publication Critical patent/DE69813832T2/de
Publication of DE69813832T9 publication Critical patent/DE69813832T9/de
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S436/00—Chemistry: analytical and immunological testing
    • Y10S436/804—Radioisotope, e.g. radioimmunoassay
DE69813832T 1997-08-20 1998-08-19 Vorrichtung und verfahren zur in-situ dicke- und stöchiometriemessung dünner filme Expired - Fee Related DE69813832T9 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/914,822 US6342265B1 (en) 1997-08-20 1997-08-20 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
US914822 1997-08-20
PCT/CA1998/000786 WO1999009399A1 (en) 1997-08-20 1998-08-19 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films

Publications (3)

Publication Number Publication Date
DE69813832D1 true DE69813832D1 (de) 2003-05-28
DE69813832T2 DE69813832T2 (de) 2004-01-22
DE69813832T9 DE69813832T9 (de) 2004-09-09

Family

ID=25434815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813832T Expired - Fee Related DE69813832T9 (de) 1997-08-20 1998-08-19 Vorrichtung und verfahren zur in-situ dicke- und stöchiometriemessung dünner filme

Country Status (9)

Country Link
US (2) US6342265B1 (de)
EP (1) EP1005639B1 (de)
JP (1) JP2001516022A (de)
KR (1) KR100590125B1 (de)
AT (1) ATE238544T1 (de)
AU (1) AU744849C (de)
CA (1) CA2300166C (de)
DE (1) DE69813832T9 (de)
WO (1) WO1999009399A1 (de)

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US6687281B2 (en) * 2000-08-22 2004-02-03 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs
FR2825379B1 (fr) * 2001-05-29 2004-07-16 Addon Equipements d'epitaxie par jet moleculaire
US6630361B1 (en) * 2001-06-28 2003-10-07 Advanced Micro Devices, Inc. Use of scatterometry for in-situ control of gaseous phase chemical trim process
JP3741006B2 (ja) * 2001-08-08 2006-02-01 株式会社日立製作所 荷電粒子測定装置およびその測定方法
JP2005083862A (ja) * 2003-09-08 2005-03-31 Canon Inc 光学薄膜およびこれを用いたミラー
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
US20070125303A1 (en) 2005-12-02 2007-06-07 Ward Ruby High-throughput deposition system for oxide thin film growth by reactive coevaportation
GB2437980B (en) * 2006-05-13 2010-05-19 Optical Reference Systems Ltd Apparatus for measuring semiconductor physical characteristics
DE602007001110D1 (de) 2006-08-28 2009-06-25 Imec Inter Uni Micro Electr Verfahren und System zur Kontaminationsmessung bei einem lithografischen Element
KR20080057080A (ko) * 2006-12-19 2008-06-24 삼성전자주식회사 증착장치 및 증착방법
KR20080066285A (ko) * 2007-01-11 2008-07-16 삼성전자주식회사 증발장치와 유기층 형성 방법
WO2009047299A1 (en) * 2007-10-11 2009-04-16 Centre De Recherche Public Gabriel Lippmann Analysis of a sample collector which collects sputtered material from a sample using e.g. secondary ion mass spectromy
FI20090319A0 (fi) * 2009-09-03 2009-09-03 Beneq Oy Prosessinsäätömenetelmä
US9336916B2 (en) 2010-05-14 2016-05-10 Tcnet, Llc Tc-99m produced by proton irradiation of a fluid target system
US9269467B2 (en) 2011-06-02 2016-02-23 Nigel Raymond Stevenson General radioisotope production method employing PET-style target systems
CN110646451B (zh) * 2019-08-27 2022-08-19 中国电子科技集团公司第十一研究所 束流比例检测方法及检测设备

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US3748174A (en) * 1968-12-30 1973-07-24 Gen Electric Thin film nickel temperature sensor
US3574650A (en) * 1969-03-13 1971-04-13 United Aircraft Corp Vacuum vapor deposition with control of elevation of metal melt
US3620851A (en) * 1969-12-04 1971-11-16 William J King Method for making a buried layer semiconductor device
US3773548A (en) * 1972-01-27 1973-11-20 Optical Coating Laboratory Inc Method of monitoring the rate of depositing a coating solely by its optical properties
US3892490A (en) * 1974-03-06 1975-07-01 Minolta Camera Kk Monitoring system for coating a substrate
US4024291A (en) * 1975-06-17 1977-05-17 Leybold-Heraeus Gmbh & Co. Kg Control of vapor deposition
US4197170A (en) * 1977-10-11 1980-04-08 Monsanto Research Corporation Radiation sources and process
US4578279A (en) * 1981-05-26 1986-03-25 International Business Machines Corporation Inspection of multilayer ceramic circuit modules by electrical inspection of unfired green sheets
US4467198A (en) * 1981-09-22 1984-08-21 Twin City International Inc. Radiation shielding arrangement for coating thickness measurement device
US4771177A (en) * 1985-11-01 1988-09-13 E. I. Du Pont De Nemours And Company Point source for testing a gamma camera
US4713140A (en) * 1987-03-02 1987-12-15 International Business Machines Corporation Laser luminescence monitor for material thickness
US5009485A (en) * 1989-08-17 1991-04-23 Hughes Aircraft Company Multiple-notch rugate filters and a controlled method of manufacture thereof
DE4012398A1 (de) * 1990-04-19 1991-10-24 Waelischmiller Hans Dipl Ing F Bestrahlungsvorrichtung
US5235190A (en) * 1991-01-29 1993-08-10 Gemini Research, Inc. Continuous air monitoring system
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US6116779A (en) * 1997-03-10 2000-09-12 Johnson; Shane R. Method for determining the temperature of semiconductor substrates from bandgap spectra

Also Published As

Publication number Publication date
WO1999009399A1 (en) 1999-02-25
AU744849B2 (en) 2002-03-07
CA2300166A1 (en) 1999-02-25
EP1005639B1 (de) 2003-04-23
AU744849C (en) 2002-10-24
JP2001516022A (ja) 2001-09-25
US6342265B1 (en) 2002-01-29
KR100590125B1 (ko) 2006-06-14
AU8847998A (en) 1999-03-08
ATE238544T1 (de) 2003-05-15
CA2300166C (en) 2005-10-11
KR20010023079A (ko) 2001-03-26
US6617574B2 (en) 2003-09-09
DE69813832T9 (de) 2004-09-09
EP1005639A1 (de) 2000-06-07
DE69813832T2 (de) 2004-01-22
US20020050160A1 (en) 2002-05-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAMOT AT TEL- AVIV UNIVERSITY LTD., TEL AVIV, IL

Owner name: THE UNIVERSITY OF ALBERTA, SIMON FRASER UNIVERSITY

Owner name: THE UNIVERSITY OF BRITISH COLUMBIA, VANCOUVER, BRI

8380 Miscellaneous part iii

Free format text: DIE VERTRETER WURDEN AM 14.10.04 GEAENDERT IN: VIERING, JENTSCHURA & PARTNER IN MUENCHEN

8339 Ceased/non-payment of the annual fee