DE69802234D1 - Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement - Google Patents

Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement

Info

Publication number
DE69802234D1
DE69802234D1 DE69802234T DE69802234T DE69802234D1 DE 69802234 D1 DE69802234 D1 DE 69802234D1 DE 69802234 T DE69802234 T DE 69802234T DE 69802234 T DE69802234 T DE 69802234T DE 69802234 D1 DE69802234 D1 DE 69802234D1
Authority
DE
Germany
Prior art keywords
alloys
amorphous silicon
infrared detector
component made
detector component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69802234T
Other languages
English (en)
Other versions
DE69802234T2 (de
Inventor
Domenico Caputo
Fabrizio Palma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universita degli Studi di Roma La Sapienza
Original Assignee
Universita degli Studi di Roma La Sapienza
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universita degli Studi di Roma La Sapienza filed Critical Universita degli Studi di Roma La Sapienza
Application granted granted Critical
Publication of DE69802234D1 publication Critical patent/DE69802234D1/de
Publication of DE69802234T2 publication Critical patent/DE69802234T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1016—Devices sensitive to infrared, visible or ultraviolet radiation comprising transparent or semitransparent devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Glass Compositions (AREA)
DE69802234T 1997-06-06 1998-05-29 Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement Expired - Fee Related DE69802234T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT97RM000341A IT1291926B1 (it) 1997-06-06 1997-06-06 Sistema di rivelazione di radiazione infrarossa basato su sensori in silicio amorfo e sue leghe

Publications (2)

Publication Number Publication Date
DE69802234D1 true DE69802234D1 (de) 2001-12-06
DE69802234T2 DE69802234T2 (de) 2002-07-25

Family

ID=11405119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802234T Expired - Fee Related DE69802234T2 (de) 1997-06-06 1998-05-29 Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement

Country Status (4)

Country Link
US (1) US6169284B1 (de)
EP (1) EP0883194B1 (de)
DE (1) DE69802234T2 (de)
IT (1) IT1291926B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001073850A2 (en) * 2000-03-20 2001-10-04 Aegis Semiconductor A semitransparent optical detector including a silicon and germanium alloy and method of making
US6879014B2 (en) 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
US6670599B2 (en) 2000-03-27 2003-12-30 Aegis Semiconductor, Inc. Semitransparent optical detector on a flexible substrate and method of making
FR2817439B1 (fr) * 2000-11-30 2003-01-24 Commissariat Energie Atomique Dispositif de detection de rayonnement infra-rouge
TW512524B (en) * 2001-01-19 2002-12-01 Nat Science Council Fabrication of amorphous silicon/amorphous silicon gemine NI1PI2N infrared position defectors
US7002697B2 (en) 2001-08-02 2006-02-21 Aegis Semiconductor, Inc. Tunable optical instruments
JP4218261B2 (ja) * 2002-06-11 2009-02-04 ダイキン工業株式会社 ポンプユニット
US20050136177A1 (en) * 2003-08-25 2005-06-23 Anthony Hesse Method for coloring landscaping materials using foamable dry colorant
US7221827B2 (en) 2003-09-08 2007-05-22 Aegis Semiconductor, Inc. Tunable dispersion compensator
NO321281B1 (no) * 2004-09-15 2006-04-18 Sintef Infrarod kilde
US8933711B2 (en) * 2011-09-08 2015-01-13 Freescale Semiconductor, Inc. Capacitive sensor radiation measurement
US8884241B2 (en) 2011-09-08 2014-11-11 Freescale Semiconductor, Inc. Incident capacitive sensor
CN103247675B (zh) * 2013-05-23 2016-07-13 哈尔滨工业大学 具备光电转换和放大功能的异质结三极管

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1272248B (it) * 1994-05-12 1997-06-16 Univ Roma Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori
IT1277856B1 (it) * 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.

Also Published As

Publication number Publication date
ITRM970341A1 (it) 1998-12-06
EP0883194B1 (de) 2001-10-31
IT1291926B1 (it) 1999-01-21
DE69802234T2 (de) 2002-07-25
US6169284B1 (en) 2001-01-02
ITRM970341A0 (de) 1997-06-06
EP0883194A1 (de) 1998-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee