DE69801726T2 - Hochleistungslaser - Google Patents

Hochleistungslaser

Info

Publication number
DE69801726T2
DE69801726T2 DE69801726T DE69801726T DE69801726T2 DE 69801726 T2 DE69801726 T2 DE 69801726T2 DE 69801726 T DE69801726 T DE 69801726T DE 69801726 T DE69801726 T DE 69801726T DE 69801726 T2 DE69801726 T2 DE 69801726T2
Authority
DE
Germany
Prior art keywords
high power
power laser
laser
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69801726T
Other languages
English (en)
Other versions
DE69801726D1 (de
Inventor
Vilhelm Oskarsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor AB
Original Assignee
Mitel Semiconductor AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Semiconductor AB filed Critical Mitel Semiconductor AB
Application granted granted Critical
Publication of DE69801726D1 publication Critical patent/DE69801726D1/de
Publication of DE69801726T2 publication Critical patent/DE69801726T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • G02B2006/4297—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources having protection means, e.g. protecting humans against accidental exposure to harmful laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Mechanical Optical Scanning Systems (AREA)
DE69801726T 1997-07-14 1998-07-13 Hochleistungslaser Expired - Fee Related DE69801726T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9714822A GB2327297A (en) 1997-07-14 1997-07-14 Lens cap

Publications (2)

Publication Number Publication Date
DE69801726D1 DE69801726D1 (de) 2001-10-25
DE69801726T2 true DE69801726T2 (de) 2002-07-11

Family

ID=10815837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801726T Expired - Fee Related DE69801726T2 (de) 1997-07-14 1998-07-13 Hochleistungslaser

Country Status (6)

Country Link
US (1) US6163556A (de)
EP (1) EP0892473B1 (de)
JP (1) JPH1187846A (de)
CA (1) CA2242853C (de)
DE (1) DE69801726T2 (de)
GB (1) GB2327297A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19908426C2 (de) * 1999-02-26 2001-03-22 Siemens Ag Vertikalresonator-Laserdiode mit einer lichtabsorbierenden Schicht und Verfahren zu ihrer Herstellung
DE19922521A1 (de) * 1999-05-15 2000-11-16 Bosch Gmbh Robert Optischer Sender
US6555903B2 (en) * 2000-12-19 2003-04-29 Truelight Corporation Package structure of hybrid device in optical signal transmitter
JP6023168B2 (ja) 2011-04-01 2016-11-09 フィリップス ライティング ホールディング ビー ヴィ 光源、ランプ、および光源を製造するための方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4114177A (en) * 1975-05-01 1978-09-12 Bell Telephone Laboratories, Incorporated Optically coupled device with diffusely reflecting enclosure
CA1185469A (en) * 1981-10-13 1985-04-16 Jozef Straus Fixed optical attenuator
US4565924A (en) * 1982-03-05 1986-01-21 Omron Tateisi Electronics Co. Light signal binary device with optical feedback
FR2581768B1 (fr) * 1985-05-10 1987-09-04 Thomson Csf Composant optoelectrique bidirectionnel formant coupleur optique
JPS622676A (ja) * 1985-06-28 1987-01-08 Mitsubishi Electric Corp 半導体発光装置
US5340637A (en) * 1986-09-16 1994-08-23 Hitachi, Ltd. Optical device diffraction gratings and a photomask for use in the same
US5258821A (en) * 1990-04-20 1993-11-02 Photon, Inc. Laser beam profiler having a multimode laser diode interferometer
DE4111802C1 (en) * 1991-04-11 1992-06-04 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Protecting eyes from continuous wave semiconductor laser - driving laser diode followed by optical attenuator by regulating circuit at upper limit permissible for continuous operation
KR930007024B1 (ko) * 1991-05-13 1993-07-26 삼성전자 주식회사 광픽업
US5309542A (en) * 1991-09-18 1994-05-03 International Business Machines Corporation Fiber optic transmitter modification for improved extinction ratio
US5243681A (en) * 1992-04-13 1993-09-07 Amp Incorporated Aperture disk attenuator for laser diode connector
DE4307986A1 (de) * 1993-03-13 1994-09-15 Hirschmann Richard Gmbh Co Optische Sendevorrichtung
GB2288907A (en) * 1994-04-27 1995-11-01 Thomson Consumer Electronics Combined light emitting diode and photodiode
DE4429582C2 (de) * 1994-08-19 1998-02-26 Draegerwerk Ag Strahlungsquelle für ein Meßsystem
US5838703A (en) * 1996-09-30 1998-11-17 Motorola, Inc. Semiconductor laser package with power monitoring system and optical element

Also Published As

Publication number Publication date
CA2242853A1 (en) 1999-01-14
EP0892473A1 (de) 1999-01-20
CA2242853C (en) 2002-05-14
DE69801726D1 (de) 2001-10-25
JPH1187846A (ja) 1999-03-30
GB2327297A (en) 1999-01-20
EP0892473B1 (de) 2001-09-19
GB9714822D0 (en) 1997-09-17
US6163556A (en) 2000-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee