DE69707585D1 - Verfahren zum Zusammensetzen zweier Strukturen und durch dieses Verfahren hergestellte Vorrichtung - Google Patents

Verfahren zum Zusammensetzen zweier Strukturen und durch dieses Verfahren hergestellte Vorrichtung

Info

Publication number
DE69707585D1
DE69707585D1 DE69707585T DE69707585T DE69707585D1 DE 69707585 D1 DE69707585 D1 DE 69707585D1 DE 69707585 T DE69707585 T DE 69707585T DE 69707585 T DE69707585 T DE 69707585T DE 69707585 D1 DE69707585 D1 DE 69707585D1
Authority
DE
Germany
Prior art keywords
assembling
structures
device produced
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69707585T
Other languages
English (en)
Other versions
DE69707585T2 (de
Inventor
Marc Rabarot
Laurent Fulbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69707585D1 publication Critical patent/DE69707585D1/de
Publication of DE69707585T2 publication Critical patent/DE69707585T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • B32B37/1292—Application of adhesive selectively, e.g. in stripes, in patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0615—Shape of end-face
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/115—Q-switching using intracavity electro-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Micromachines (AREA)
  • Lasers (AREA)
DE69707585T 1996-07-17 1997-07-15 Verfahren zum Zusammensetzen zweier Strukturen und durch dieses Verfahren hergestellte Vorrichtung Expired - Fee Related DE69707585T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9608943A FR2751467B1 (fr) 1996-07-17 1996-07-17 Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers

Publications (2)

Publication Number Publication Date
DE69707585D1 true DE69707585D1 (de) 2001-11-29
DE69707585T2 DE69707585T2 (de) 2002-07-11

Family

ID=9494144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707585T Expired - Fee Related DE69707585T2 (de) 1996-07-17 1997-07-15 Verfahren zum Zusammensetzen zweier Strukturen und durch dieses Verfahren hergestellte Vorrichtung

Country Status (5)

Country Link
US (1) US5981360A (de)
EP (1) EP0820128B1 (de)
JP (1) JPH1065261A (de)
DE (1) DE69707585T2 (de)
FR (1) FR2751467B1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991318A (en) * 1998-10-26 1999-11-23 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
FR2785099B1 (fr) * 1998-10-27 2001-03-09 Commissariat Energie Atomique Laser a l'etat solide, notamment microlaser, capable d'emettre des impulsions longues
FR2800429B1 (fr) 1999-11-03 2001-11-23 Commissariat Energie Atomique Procede d'assemblage d'elements a renfort par colle et dispositif obtenu par le procede
US6287891B1 (en) * 2000-04-05 2001-09-11 Hrl Laboratories, Llc Method for transferring semiconductor device layers to different substrates
DE10029791C2 (de) * 2000-06-16 2002-04-18 Infineon Technologies Ag Verfahren zur Herstellung einer stabilen Verbindung zwischen zwei Wafern
DE10037821A1 (de) * 2000-08-03 2002-02-21 Bosch Gmbh Robert Baugruppe, insbesondere Wafer-Baugruppe
DE10054159A1 (de) * 2000-11-02 2002-05-16 Wacker Siltronic Halbleitermat Verfahren zur Montage von Halbleiterscheiben
US6639932B1 (en) * 2001-03-16 2003-10-28 Coretek, Inc. Vertical-cavity surface-emitting laser (VCSEL) with cavity compensated gain
US6537846B2 (en) * 2001-03-30 2003-03-25 Hewlett-Packard Development Company, L.P. Substrate bonding using a selenidation reaction
JP4757398B2 (ja) * 2001-04-24 2011-08-24 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
DE10339487B4 (de) * 2003-08-27 2007-03-15 Infineon Technologies Ag Verfahren zum Aufbringen eines Halbleiterchips auf einen Träger
FR2860653A1 (fr) * 2004-05-28 2005-04-08 Commissariat Energie Atomique Emetteur de rayonnement associe a une microlentille
US7645624B2 (en) * 2007-10-31 2010-01-12 Tekcore Co., Ltd. Method for self bonding epitaxy
WO2011074215A1 (ja) * 2009-12-14 2011-06-23 パナソニック株式会社 波長変換レーザ光源、光学素子及び画像表示装置
DE102012217652B4 (de) * 2012-09-27 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
DE102014201635B3 (de) 2014-01-30 2015-05-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Anordnung von elektronischen Bauelementen und elektronische Schaltanordnung
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
CN113206447B (zh) * 2021-04-28 2022-08-02 东南大学 一种异质结激光器及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2712742B1 (fr) * 1993-11-15 1995-12-15 Commissariat Energie Atomique Microlaser solide, monolithique, autoaligné, à déclenchement passif par absorbant saturable et son procédé de fabrication.
JP3312377B2 (ja) * 1993-12-09 2002-08-05 セイコーエプソン株式会社 ろう材による接合方法及び装置
JP3288840B2 (ja) * 1994-02-28 2002-06-04 三菱電機株式会社 半導体装置およびその製造方法
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5516388A (en) * 1994-09-11 1996-05-14 The United States Of America As Represented By The Secretary Of The Navy Sol-gel bonding
US5488619A (en) * 1994-10-06 1996-01-30 Trw Inc. Ultracompact Q-switched microlasers and related method
US5734156A (en) * 1994-12-22 1998-03-31 Santa Barbara Research Center Optical device assembly and its preparation using metallic bump bonding and a stand-off for bonding together two planar optical components
US5689106A (en) * 1994-12-22 1997-11-18 Santa Barbara Research Center Optical device assembly having a metallic bump bonding together two planar optical components, and its preparation
JP2757815B2 (ja) * 1995-03-31 1998-05-25 日本電気株式会社 半導体装置の製造方法
JP3365140B2 (ja) * 1995-04-12 2003-01-08 富士通株式会社 液晶光変調素子の製造方法
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5564181A (en) * 1995-04-18 1996-10-15 Draper Laboratory, Inc. Method of fabricating a laminated substrate assembly chips-first multichip module
US5791552A (en) * 1995-05-24 1998-08-11 Methode Electronics Inc Assembly including fine-pitch solder bumping and method of forming
US5759753A (en) * 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
US5773884A (en) * 1996-06-27 1998-06-30 International Business Machines Corporation Electronic package with thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto

Also Published As

Publication number Publication date
DE69707585T2 (de) 2002-07-11
EP0820128B1 (de) 2001-10-24
JPH1065261A (ja) 1998-03-06
FR2751467B1 (fr) 1998-10-02
US5981360A (en) 1999-11-09
EP0820128A1 (de) 1998-01-21
FR2751467A1 (fr) 1998-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee