DE69632022D1 - Spannungspegelregler - Google Patents

Spannungspegelregler

Info

Publication number
DE69632022D1
DE69632022D1 DE69632022T DE69632022T DE69632022D1 DE 69632022 D1 DE69632022 D1 DE 69632022D1 DE 69632022 T DE69632022 T DE 69632022T DE 69632022 T DE69632022 T DE 69632022T DE 69632022 D1 DE69632022 D1 DE 69632022D1
Authority
DE
Germany
Prior art keywords
voltage level
level control
control
voltage
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69632022T
Other languages
English (en)
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69632022D1 publication Critical patent/DE69632022D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
DE69632022T 1996-01-24 1996-01-24 Spannungspegelregler Expired - Lifetime DE69632022D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830026A EP0786777B1 (de) 1996-01-24 1996-01-24 Spannungspegelregler

Publications (1)

Publication Number Publication Date
DE69632022D1 true DE69632022D1 (de) 2004-05-06

Family

ID=8225793

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69632022T Expired - Lifetime DE69632022D1 (de) 1996-01-24 1996-01-24 Spannungspegelregler

Country Status (3)

Country Link
US (1) US5821806A (de)
EP (1) EP0786777B1 (de)
DE (1) DE69632022D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1173769A (ja) * 1997-08-27 1999-03-16 Mitsubishi Electric Corp 半導体装置
DE69726136T2 (de) * 1997-08-29 2004-08-26 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zur Erzeugung einer Gatterspannung für nichtfluchtige Speicheranordnungen
US6445292B1 (en) 2000-04-12 2002-09-03 Pittway Corporation Processor based wireless detector
US6477086B2 (en) 2000-12-29 2002-11-05 Intel Corporation Local sensing of non-volatile memory
US6744671B2 (en) * 2000-12-29 2004-06-01 Intel Corporation Kicker for non-volatile memory drain bias
US6535423B2 (en) * 2000-12-29 2003-03-18 Intel Corporation Drain bias for non-volatile memory
US6570789B2 (en) 2000-12-29 2003-05-27 Intel Corporation Load for non-volatile memory drain bias
US6456540B1 (en) 2001-01-30 2002-09-24 Intel Corporation Method and apparatus for gating a global column select line with address transition detection
US7579816B2 (en) * 2006-02-07 2009-08-25 Linear Technology Corporation Single feedback input for regulation at both positive and negative voltage levels
EP3217550B1 (de) * 2016-03-11 2024-01-10 Socionext Inc. Schaltung zur verwendung in komparatoren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954990A (en) * 1989-05-30 1990-09-04 Cypress Semiconductor Corp. Programming voltage control circuit for EPROMS
US5403514A (en) * 1991-10-07 1995-04-04 Canon Kabushiki Kaisha Solvent composition and water-repellent/oil-repellent composition using the same
KR0124046B1 (ko) * 1993-11-18 1997-11-25 김광호 반도체메모리장치의 승압레벨 감지회로
US5559717A (en) * 1994-03-23 1996-09-24 Intel Corporation High precision voltage detector utilizing flash EEPROM memory cells
US5495453A (en) * 1994-10-19 1996-02-27 Intel Corporation Low power voltage detector circuit including a flash memory cell

Also Published As

Publication number Publication date
EP0786777A1 (de) 1997-07-30
US5821806A (en) 1998-10-13
EP0786777B1 (de) 2004-03-31

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Legal Events

Date Code Title Description
8332 No legal effect for de