DE69620206T2 - Dynamischer infrarot-szeneprojektor - Google Patents
Dynamischer infrarot-szeneprojektorInfo
- Publication number
- DE69620206T2 DE69620206T2 DE69620206T DE69620206T DE69620206T2 DE 69620206 T2 DE69620206 T2 DE 69620206T2 DE 69620206 T DE69620206 T DE 69620206T DE 69620206 T DE69620206 T DE 69620206T DE 69620206 T2 DE69620206 T2 DE 69620206T2
- Authority
- DE
- Germany
- Prior art keywords
- diodes
- material system
- array
- diode
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 26
- 238000004020 luminiscence type Methods 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 15
- 238000012360 testing method Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- -1 indium-aluminium-antimony Chemical compound 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 11
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001931 thermography Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001748 luminescence spectrum Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- YVUZUKYBUMROPQ-UHFFFAOYSA-N mercury zinc Chemical compound [Zn].[Hg] YVUZUKYBUMROPQ-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9519897.4A GB9519897D0 (en) | 1995-09-29 | 1995-09-29 | Dynamic infrared scene projector |
| PCT/GB1996/002374 WO1997013282A1 (en) | 1995-09-29 | 1996-09-26 | Dynamic infrared scene projector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69620206D1 DE69620206D1 (de) | 2002-05-02 |
| DE69620206T2 true DE69620206T2 (de) | 2002-10-24 |
Family
ID=10781489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69620206T Expired - Lifetime DE69620206T2 (de) | 1995-09-29 | 1996-09-26 | Dynamischer infrarot-szeneprojektor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5949081A (OSRAM) |
| EP (1) | EP0852818B1 (OSRAM) |
| JP (1) | JP4002297B2 (OSRAM) |
| KR (1) | KR100418139B1 (OSRAM) |
| DE (1) | DE69620206T2 (OSRAM) |
| ES (1) | ES2171719T3 (OSRAM) |
| GB (2) | GB9519897D0 (OSRAM) |
| WO (1) | WO1997013282A1 (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE20307956U1 (de) | 2003-05-20 | 2003-07-24 | biostep Labor- und Systemtechnik GmbH, 09387 Jahnsdorf | Imagertestgerät |
| DE102006033768A1 (de) * | 2006-07-21 | 2008-01-24 | Bayerische Motoren Werke Ag | Gerät zum Testen von Infrarotkameras |
| US7581860B2 (en) | 2003-03-31 | 2009-09-01 | Osram Opto Semiconductors Gmbh | Headlight and headlight element |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9814462D0 (en) * | 1998-07-04 | 1998-09-02 | Secr Defence | Infrared light emitting diodes |
| GB2354369A (en) * | 1999-09-17 | 2001-03-21 | Secr Defence | Noise reduced semiconductor photon detectors |
| US6627907B1 (en) | 2000-09-29 | 2003-09-30 | Honeywell International Inc. | Infrared scene projector with current-mirror control electronics |
| US6485150B1 (en) | 2001-07-03 | 2002-11-26 | The United States Of America As Represented By The Secretary Of The Navy | Tunable spectral source |
| US7048384B2 (en) * | 2003-01-24 | 2006-05-23 | Honeywell International Inc. | Multiple scene projection system |
| US7473896B2 (en) * | 2005-12-21 | 2009-01-06 | Teledyne Licensing, Llc | Negative luminescence cold shield (NLCS) with microlenses to magnify the effective area of sparsely populated negative luminescence regions and method of fabrication |
| GB0607655D0 (en) * | 2006-04-18 | 2006-06-28 | Esl Defence Ltd | Apparatus for use in the testing and evaluation of infrared missile warning sensors |
| USD631183S1 (en) | 2008-09-23 | 2011-01-18 | Lsi Industries, Inc. | Lighting fixture |
| US8215799B2 (en) * | 2008-09-23 | 2012-07-10 | Lsi Industries, Inc. | Lighting apparatus with heat dissipation system |
| US20100264314A1 (en) * | 2009-04-20 | 2010-10-21 | Lsi Industries, Inc. | Lighting Techniques for Wirelessly Controlling Lighting Elements |
| US8628198B2 (en) * | 2009-04-20 | 2014-01-14 | Lsi Industries, Inc. | Lighting techniques for wirelessly controlling lighting elements |
| US8564879B1 (en) | 2010-03-26 | 2013-10-22 | The United States Of America As Represented By The Secretary Of The Navy | Multispectral infrared simulation target array |
| CN102346095B (zh) * | 2011-05-03 | 2013-07-03 | 中国兵器工业第二〇五研究所 | 中波红外二极管阵列场景生成器 |
| JP6591758B2 (ja) * | 2015-02-16 | 2019-10-16 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子及び赤外線発光素子の製造方法 |
| EP3652494A1 (en) | 2017-07-12 | 2020-05-20 | Raytheon Company | Active multi-spectral system for generating camouflage or other radiating patterns from objects in an infrared scene |
| US11121302B2 (en) | 2018-10-11 | 2021-09-14 | SeeQC, Inc. | System and method for superconducting multi-chip module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214292A (en) * | 1991-08-14 | 1993-05-25 | Mission Research Corporation | Dynamic infrared scene display |
| GB9420954D0 (en) * | 1994-10-18 | 1994-12-07 | Univ Keele | An infrared radiation emitting device |
-
1995
- 1995-09-29 GB GBGB9519897.4A patent/GB9519897D0/en active Pending
-
1996
- 1996-09-26 ES ES96931903T patent/ES2171719T3/es not_active Expired - Lifetime
- 1996-09-26 GB GB9804051A patent/GB2319664B/en not_active Expired - Fee Related
- 1996-09-26 KR KR10-1998-0702341A patent/KR100418139B1/ko not_active Expired - Fee Related
- 1996-09-26 DE DE69620206T patent/DE69620206T2/de not_active Expired - Lifetime
- 1996-09-26 JP JP51405397A patent/JP4002297B2/ja not_active Expired - Fee Related
- 1996-09-26 WO PCT/GB1996/002374 patent/WO1997013282A1/en not_active Ceased
- 1996-09-26 US US09/043,792 patent/US5949081A/en not_active Expired - Lifetime
- 1996-09-26 EP EP96931903A patent/EP0852818B1/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7581860B2 (en) | 2003-03-31 | 2009-09-01 | Osram Opto Semiconductors Gmbh | Headlight and headlight element |
| DE20307956U1 (de) | 2003-05-20 | 2003-07-24 | biostep Labor- und Systemtechnik GmbH, 09387 Jahnsdorf | Imagertestgerät |
| DE102006033768A1 (de) * | 2006-07-21 | 2008-01-24 | Bayerische Motoren Werke Ag | Gerät zum Testen von Infrarotkameras |
Also Published As
| Publication number | Publication date |
|---|---|
| US5949081A (en) | 1999-09-07 |
| GB9519897D0 (en) | 1995-11-29 |
| WO1997013282A1 (en) | 1997-04-10 |
| EP0852818A1 (en) | 1998-07-15 |
| JP4002297B2 (ja) | 2007-10-31 |
| DE69620206D1 (de) | 2002-05-02 |
| JPH11513489A (ja) | 1999-11-16 |
| EP0852818B1 (en) | 2002-03-27 |
| KR100418139B1 (ko) | 2004-05-31 |
| ES2171719T3 (es) | 2002-09-16 |
| GB2319664B (en) | 1999-09-22 |
| GB9804051D0 (en) | 1998-04-22 |
| KR19990063869A (ko) | 1999-07-26 |
| GB2319664A (en) | 1998-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |