DE69613654T2 - Vorrichtung zur Zuführung eines festen Werkstoffes in einen Ofen - Google Patents

Vorrichtung zur Zuführung eines festen Werkstoffes in einen Ofen

Info

Publication number
DE69613654T2
DE69613654T2 DE69613654T DE69613654T DE69613654T2 DE 69613654 T2 DE69613654 T2 DE 69613654T2 DE 69613654 T DE69613654 T DE 69613654T DE 69613654 T DE69613654 T DE 69613654T DE 69613654 T2 DE69613654 T2 DE 69613654T2
Authority
DE
Germany
Prior art keywords
oven
feeding
solid material
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69613654T
Other languages
English (en)
Other versions
DE69613654D1 (de
Inventor
Dick S Williams
William L Luter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69613654D1 publication Critical patent/DE69613654D1/de
Application granted granted Critical
Publication of DE69613654T2 publication Critical patent/DE69613654T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Furnace Charging Or Discharging (AREA)
DE69613654T 1995-10-31 1996-10-17 Vorrichtung zur Zuführung eines festen Werkstoffes in einen Ofen Expired - Fee Related DE69613654T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/551,152 US5762491A (en) 1995-10-31 1995-10-31 Solid material delivery system for a furnace

Publications (2)

Publication Number Publication Date
DE69613654D1 DE69613654D1 (de) 2001-08-09
DE69613654T2 true DE69613654T2 (de) 2001-10-18

Family

ID=24200076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613654T Expired - Fee Related DE69613654T2 (de) 1995-10-31 1996-10-17 Vorrichtung zur Zuführung eines festen Werkstoffes in einen Ofen

Country Status (7)

Country Link
US (1) US5762491A (de)
EP (1) EP0771891B1 (de)
JP (1) JPH09194295A (de)
KR (1) KR970023973A (de)
DE (1) DE69613654T2 (de)
SG (1) SG74572A1 (de)
TW (1) TW305818B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412376B2 (ja) * 1996-01-12 2003-06-03 三菱住友シリコン株式会社 単結晶引上装置
DE19813453A1 (de) 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
DE19813452A1 (de) 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
US6089285A (en) * 1998-04-29 2000-07-18 Memc Electronics Materials, Inc. Method and system for supplying semiconductor source material
US6454851B1 (en) * 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7356050B2 (en) 2003-12-17 2008-04-08 Siemens Aktiengesellschaft System for transmission of data on a bus
JP4655292B2 (ja) * 2004-06-03 2011-03-23 株式会社 アイアイエスマテリアル 電子ビームを用いたスクラップシリコンの精錬装置
US20090151622A1 (en) * 2007-12-14 2009-06-18 Wilson Andrew B Systems and methods for growing polycrystalline silicon ingots
US7922817B2 (en) * 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
KR100945748B1 (ko) * 2009-04-06 2010-03-05 (주)티에스티아이테크 폴리실리콘의 제조장치
US9016334B2 (en) * 2011-11-01 2015-04-28 Pepsico, Inc. Aseptic connector for a free-flowing food
CN106145117B (zh) * 2015-03-10 2018-02-06 周正平 一种多晶硅生产中的还原炉进料方法
US10968533B2 (en) * 2016-02-25 2021-04-06 Corner Star Limited Feed system for crystal pulling systems
CN110398153A (zh) * 2019-08-20 2019-11-01 四川众友联合实业有限公司 一种高效节能熔化炉进料组件
US20230078325A1 (en) * 2021-09-14 2023-03-16 Globalwafers Co., Ltd. Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for preparing such tubes, and methods for forming a single crystal silicon ingot

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2253707A (en) * 1939-12-09 1941-08-26 Fisher Furnace Company Crucible furnace
US3248206A (en) * 1962-07-02 1966-04-26 Bausch & Lomb Glass containing pot furnace
CH610396A5 (de) * 1975-03-06 1979-04-12 Prolizenz Ag
CH613129A5 (de) * 1975-06-11 1979-09-14 Prolizenz Ag
US4313386A (en) * 1979-11-01 1982-02-02 The Keller Corporation System for transport of mixtures of solid particulate fuel and air, and rotary distributor suitable for use therein
US4454828A (en) * 1983-01-24 1984-06-19 Zempel Allen M System for burning bio-mass pellets
US4513671A (en) * 1984-07-20 1985-04-30 Eshland Enterprises, Inc. Particle fuel delivery control device
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
DE3865628D1 (de) * 1987-11-02 1991-11-21 Mitsubishi Materials Corp Einrichtung zur zuechtung von kristallen.
US5416795A (en) * 1994-05-20 1995-05-16 Kaniuk; John A. Quick change crucible for vacuum melting furnace

Also Published As

Publication number Publication date
KR970023973A (ko) 1997-05-30
DE69613654D1 (de) 2001-08-09
EP0771891B1 (de) 2001-07-04
TW305818B (de) 1997-05-21
EP0771891A1 (de) 1997-05-07
SG74572A1 (en) 2000-08-22
JPH09194295A (ja) 1997-07-29
US5762491A (en) 1998-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee