DE69606098D1 - Digitalisierungsvorrichtung und -verfahren für lichtempfindliche Detektoren und Ausleseverfahren einer Matrix von Lichtdetektoren - Google Patents

Digitalisierungsvorrichtung und -verfahren für lichtempfindliche Detektoren und Ausleseverfahren einer Matrix von Lichtdetektoren

Info

Publication number
DE69606098D1
DE69606098D1 DE69606098T DE69606098T DE69606098D1 DE 69606098 D1 DE69606098 D1 DE 69606098D1 DE 69606098 T DE69606098 T DE 69606098T DE 69606098 T DE69606098 T DE 69606098T DE 69606098 D1 DE69606098 D1 DE 69606098D1
Authority
DE
Germany
Prior art keywords
light
detectors
matrix
digitizing device
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69606098T
Other languages
English (en)
Other versions
DE69606098T2 (de
Inventor
Philippe Pantigny
Patrick Audebert
Eric Mottin
Frederic Rothan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69606098D1 publication Critical patent/DE69606098D1/de
Application granted granted Critical
Publication of DE69606098T2 publication Critical patent/DE69606098T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69606098T 1995-06-14 1996-06-12 Digitalisierungsvorrichtung und -verfahren für lichtempfindliche Detektoren und Ausleseverfahren einer Matrix von Lichtdetektoren Expired - Lifetime DE69606098T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9507079A FR2735632B1 (fr) 1995-06-14 1995-06-14 Dispositif et procede de numerisation pour detecteurs photosensibles et procede de lecture d'une matrice de detecteurs photoniques

Publications (2)

Publication Number Publication Date
DE69606098D1 true DE69606098D1 (de) 2000-02-17
DE69606098T2 DE69606098T2 (de) 2000-08-31

Family

ID=9479982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69606098T Expired - Lifetime DE69606098T2 (de) 1995-06-14 1996-06-12 Digitalisierungsvorrichtung und -verfahren für lichtempfindliche Detektoren und Ausleseverfahren einer Matrix von Lichtdetektoren

Country Status (4)

Country Link
US (1) US5742058A (de)
EP (1) EP0749233B1 (de)
DE (1) DE69606098T2 (de)
FR (1) FR2735632B1 (de)

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GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
JP2000506710A (ja) * 1996-12-12 2000-05-30 コミサリヤ ア レェネルジ アトミック 光子ディテクタのマトリクス読み取り装置ならびに方法
DE19715214C1 (de) * 1997-04-11 1998-07-02 Siemens Ag Bildsensor mit einer Vielzahl von Bildpunkt-Sensorbereichen
US6410899B1 (en) 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
US6512544B1 (en) * 1998-06-17 2003-01-28 Foveon, Inc. Storage pixel sensor and array with compression
DE69812596T2 (de) * 1998-06-26 2003-11-13 Agilent Technologies Inc Photodiodenanordnung
US9029793B2 (en) * 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
US6707499B1 (en) * 1998-12-08 2004-03-16 Industrial Technology Research Institute Technique to increase dynamic range of a CCD image sensor
EP1166359A1 (de) * 1999-03-04 2002-01-02 Böhm, Markus Bildsensoreinrichtung
US6697114B1 (en) 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US6809768B1 (en) 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US6882367B1 (en) 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
FR2807601B1 (fr) * 2000-04-10 2002-09-20 Commissariat Energie Atomique Dispositif de conversion d'un photosignal en tension dans les senseurs d'images a integrateurs deportes
US6940551B2 (en) 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
FR2818073B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Circuit de lecture de charges par calibration et procede de lecture de charges par calibration
FR2818482B1 (fr) * 2000-12-14 2003-01-17 Commissariat Energie Atomique Circuit de lecture de charges a preamplification adaptative et procede de lecture de charges a preamplification adaptative
EP1231641A1 (de) * 2001-02-09 2002-08-14 C.S.E.M. Centre Suisse D'electronique Et De Microtechnique Sa Aktive Bildsensorschaltung mit Analogspeicher für einen optoelektronischen Bildsensor
IL150058A0 (en) 2002-06-06 2004-06-01 Semi Conductor Devices Scd Par Focal plane processor for ir detection
GB0224689D0 (en) 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
JP2006504258A (ja) * 2002-10-25 2006-02-02 ゴールドパワー リミテッド 回路基板およびその製造方法
JP4147094B2 (ja) * 2002-11-22 2008-09-10 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
KR100484278B1 (ko) * 2003-02-07 2005-04-20 (주)실리콘화일 넓은 동작 범위를 갖는 광 화상 수신용 디바이스
US6995376B2 (en) * 2003-07-01 2006-02-07 International Business Machines Corporation Silicon-on-insulator latch-up pulse-radiation detector
JP4537467B2 (ja) * 2008-03-18 2010-09-01 アドバンスド・マスク・インスペクション・テクノロジー株式会社 試料検査装置及び試料検査方法
KR20150046641A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 전하 증폭기 및 이를 포함하는 검출기와 엑스선 촬영 장치
EP3085075B1 (de) 2013-12-16 2017-08-30 Koninklijke Philips N.V. Bildgebendes system mit neuartigem bildsensor mit lücken für elektronische schaltkreise

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8605141D0 (en) * 1986-03-01 1986-04-09 Sinclair Res Ltd Semiconductor imaging elements
JPS63206069A (ja) * 1987-02-23 1988-08-25 Fuji Photo Film Co Ltd イメ−ジ・センサ
JP2890553B2 (ja) * 1989-11-24 1999-05-17 株式会社島津製作所 Ｘ線像撮像装置
US5168528A (en) * 1990-08-20 1992-12-01 Itt Corporation Differential electronic imaging system
US5324944A (en) * 1992-12-10 1994-06-28 Hughes Aircraft Company Infrared detection system and method with distributed signal amplification and sampling

Also Published As

Publication number Publication date
EP0749233B1 (de) 2000-01-12
FR2735632B1 (fr) 1997-07-11
US5742058A (en) 1998-04-21
EP0749233A1 (de) 1996-12-18
FR2735632A1 (fr) 1996-12-20
DE69606098T2 (de) 2000-08-31

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