DE69506338D1 - Verfahren und Gerät zur Herstellung von supraleitenden Komponenten via Laserablation, gefolgt durch Laserbearbeitung - Google Patents

Verfahren und Gerät zur Herstellung von supraleitenden Komponenten via Laserablation, gefolgt durch Laserbearbeitung

Info

Publication number
DE69506338D1
DE69506338D1 DE69506338T DE69506338T DE69506338D1 DE 69506338 D1 DE69506338 D1 DE 69506338D1 DE 69506338 T DE69506338 T DE 69506338T DE 69506338 T DE69506338 T DE 69506338T DE 69506338 D1 DE69506338 D1 DE 69506338D1
Authority
DE
Germany
Prior art keywords
followed
components via
superconducting components
laser processing
producing superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69506338T
Other languages
English (en)
Other versions
DE69506338T2 (de
Inventor
Akihiro Moto
Tatsuoki Nagaishi
Hideo Itozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69506338D1 publication Critical patent/DE69506338D1/de
Application granted granted Critical
Publication of DE69506338T2 publication Critical patent/DE69506338T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE69506338T 1994-08-26 1995-08-25 Verfahren und Gerät zur Herstellung von supraleitenden Komponenten via Laserablation, gefolgt durch Laserbearbeitung Expired - Fee Related DE69506338T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6225709A JPH0870144A (ja) 1994-08-26 1994-08-26 超電導部品の作製方法

Publications (2)

Publication Number Publication Date
DE69506338D1 true DE69506338D1 (de) 1999-01-14
DE69506338T2 DE69506338T2 (de) 1999-05-12

Family

ID=16833580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506338T Expired - Fee Related DE69506338T2 (de) 1994-08-26 1995-08-25 Verfahren und Gerät zur Herstellung von supraleitenden Komponenten via Laserablation, gefolgt durch Laserbearbeitung

Country Status (7)

Country Link
US (2) US5672210A (de)
EP (1) EP0698931B1 (de)
JP (1) JPH0870144A (de)
KR (1) KR100234850B1 (de)
CA (1) CA2156878A1 (de)
DE (1) DE69506338T2 (de)
TW (1) TW383512B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6209203B1 (en) * 1998-01-08 2001-04-03 Lexmark International, Inc. Method for making nozzle array for printhead
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6265033B1 (en) 1998-09-11 2001-07-24 Donald Bennett Hilliard Method for optically coupled vapor deposition
AU1915600A (en) * 1998-11-20 2000-06-13 Felix E. Fernandez Apparatus and method for pulsed laser deposition of materials on wires and pipes
US6335208B1 (en) 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
EP1104033B1 (de) * 1999-11-26 2007-02-21 European High Temperature Superconductors GmbH & Co. KG Verfahren zur Erzeugung einer supraleitfähigen Schicht
US6491759B1 (en) * 2000-03-14 2002-12-10 Neocera, Inc. Combinatorial synthesis system
DK1335829T3 (da) * 2000-10-26 2011-12-05 Neophotonics Corp Optiske strukturer med flere lag
JP2002235168A (ja) * 2001-02-08 2002-08-23 Sumitomo Electric Ind Ltd 成膜方法および成膜装置
FR2827705B1 (fr) * 2001-07-19 2003-10-24 Commissariat Energie Atomique Transistor et procede de fabrication d'un transistor sur un substrat sige/soi
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
JP2003156858A (ja) * 2001-11-22 2003-05-30 Tokyo Electron Ltd 基板処理方法及び基板処理システム
US20030129396A1 (en) * 2001-12-27 2003-07-10 Gerhard Kiessling Coating composition for metal conductors and coating process involving the use thereof
US7271012B2 (en) * 2003-07-15 2007-09-18 Control Systemation, Inc. Failure analysis methods and systems
US20050067389A1 (en) * 2003-09-25 2005-03-31 Greer James A. Target manipulation for pulsed laser deposition
US7405165B2 (en) * 2004-11-05 2008-07-29 Taiwan Semiconductor Manufacturing Co, Ltd Dual-tank etch method for oxide thickness control
ES2325894B1 (es) * 2006-02-24 2010-10-28 Universidad De Cadiz Metodo y aparato para la fabricacion de elementos opticos difractivos.
ES2299335B2 (es) * 2006-03-09 2010-10-13 Universidad De Cadiz Metodo para la fabricacion de estructuras opticas con funcionalidad puramente refractivas.
US8742282B2 (en) 2007-04-16 2014-06-03 General Electric Company Ablative plasma gun
US9368772B1 (en) 2009-06-15 2016-06-14 Sakti3, Inc. Packaging and termination structure for a solid state battery
JP2011012349A (ja) * 2010-10-01 2011-01-20 Hochiki Corp 薄膜形成装置およびそれを用いた薄膜形成方法
JP2013122065A (ja) * 2011-12-09 2013-06-20 Sumitomo Electric Ind Ltd 機能性薄膜の成膜方法および成膜装置
US20150179418A1 (en) * 2012-08-08 2015-06-25 Milman Thin Film Systems Pvt. Ltd. Miniature physical vapour deposition station
KR102188372B1 (ko) * 2019-09-19 2020-12-08 주식회사 테토스 기판 양 측면부 증착 장치
KR102188373B1 (ko) * 2019-09-20 2020-12-08 주식회사 테토스 기판 양 측면부 증착 장치
CN115537737B (zh) * 2022-10-13 2023-11-17 西南交通大学 一种薄涂层的制备方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
JPS63250881A (ja) * 1987-04-07 1988-10-18 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS6443915A (en) 1987-08-10 1989-02-16 Univ Tokai Manufacture of superconductive material
JP2822447B2 (ja) * 1989-05-19 1998-11-11 住友電気工業株式会社 酸化物超電導線材の製造方法および装置
JPH03174307A (ja) * 1989-11-30 1991-07-29 Chiyoudendou Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai 酸化物超電導体の製造方法

Also Published As

Publication number Publication date
TW383512B (en) 2000-03-01
US5952271A (en) 1999-09-14
KR960009251A (ko) 1996-03-22
US5672210A (en) 1997-09-30
JPH0870144A (ja) 1996-03-12
DE69506338T2 (de) 1999-05-12
KR100234850B1 (ko) 1999-12-15
EP0698931B1 (de) 1998-12-02
EP0698931A1 (de) 1996-02-28
CA2156878A1 (en) 1996-02-27

Similar Documents

Publication Publication Date Title
DE69506338T2 (de) Verfahren und Gerät zur Herstellung von supraleitenden Komponenten via Laserablation, gefolgt durch Laserbearbeitung
DE69519702T2 (de) Verfahren und Vorrichtung zur Herstellung von ionisiertem Wasser
DE69106391D1 (de) Verfahren und Vorrichtung zur Herstellung von Honigwabenmaterial.
DE3582637D1 (de) Sprueharm sowie verfahren und vorrichtung zur herstellung desselben.
DE69509841T2 (de) Verfahren und Vorrichtung zur Herstellung von Sauerstoff
DE69511761D1 (de) Eingekapseltes Regal, sowie Vorrichtung und Verfahren zur Herstellung desselben
DE69616100D1 (de) Verfahren und Vorrichtung zur Herstellung von ozonisiertem Wasser
DE68915233D1 (de) Verfahren und Vorrichtung zur Herstellung von Kontaktlinsen.
DE69332285D1 (de) Vorrichtung und Verfahren zur Herstellung von mehrschichtigen Formteilen
ATA253990A (de) Konzentrierte fungizide mittel und verfahren zur herstellung solcher granulierter mittel
DE69518407D1 (de) Verfahren und vorrichtung zur herstellung von leichten olefinen
DE69426594T2 (de) Verfahren und vorrichtung zur herstellung von mehrfarbigen, biegsamen und weichen verkleidungsbauteilen
DE69023410D1 (de) Verfahren und Vorrichtung zur Herstellung von Pellets.
DE69415893T2 (de) Verfahren zur Herstellung von geschnittenen Fasern und Vorrichtung dafür
DE59002322D1 (de) Verfahren zur herstellung von 1,1,1,3,3,3-hexafluorpropan und 2-chlor-1,1,1,3,3,3-hexafluorpropan.
DE69321848T2 (de) Verfahren zur herstellung von 1,1,1,2,3,3-hexafluorpropan und von tetrafluorchlorpropen
DE59102342D1 (de) Vorrichtung und Verfahren zur Herstellung von Gussformteilen.
DE68908409D1 (de) Vorrichtung und verfahren zur herstellung von faserplatten.
DE69018964D1 (de) Verfahren und vorrichtung zur herstellung von gerippten rohren.
DE69525705D1 (de) Verfahren und Vorrichtung zur Herstellung von Bändern
DE69613488T2 (de) Verfahren und Vorrichtung zur Herstellung von orientierten Zellulose-Folien
DE59404033D1 (de) Verfahren und vorrichtung zur herstellung von 1,2-dichlorethan durch direktchlorierung
ATA25894A (de) Verfahren und vorrichtung zur herstellung von metall-matrix-verbundwerkstoffen
DE69628907D1 (de) Verfahren und vorrichtung zur herstellung von löchern in werkstücken
DE69002134D1 (de) Verfahren zur herstellung von 1,1-dichlor-1-fluoroethan und 1-chlor-1-1-difluorethan.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee