DE69420474T2 - Process for rinsing and pumping out a vacuum chamber to ultra-high vacuum - Google Patents

Process for rinsing and pumping out a vacuum chamber to ultra-high vacuum

Info

Publication number
DE69420474T2
DE69420474T2 DE69420474T DE69420474T DE69420474T2 DE 69420474 T2 DE69420474 T2 DE 69420474T2 DE 69420474 T DE69420474 T DE 69420474T DE 69420474 T DE69420474 T DE 69420474T DE 69420474 T2 DE69420474 T2 DE 69420474T2
Authority
DE
Germany
Prior art keywords
rinsing
ultra
pumping out
vacuum
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69420474T
Other languages
German (de)
Other versions
DE69420474D1 (en
Inventor
Aihua Chen
Robert A Chapman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22188158&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69420474(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69420474D1 publication Critical patent/DE69420474D1/en
Application granted granted Critical
Publication of DE69420474T2 publication Critical patent/DE69420474T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
DE69420474T 1993-06-30 1994-06-28 Process for rinsing and pumping out a vacuum chamber to ultra-high vacuum Expired - Fee Related DE69420474T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8493893A 1993-06-30 1993-06-30

Publications (2)

Publication Number Publication Date
DE69420474D1 DE69420474D1 (en) 1999-10-14
DE69420474T2 true DE69420474T2 (en) 2000-05-18

Family

ID=22188158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69420474T Expired - Fee Related DE69420474T2 (en) 1993-06-30 1994-06-28 Process for rinsing and pumping out a vacuum chamber to ultra-high vacuum

Country Status (5)

Country Link
US (2) US5536330A (en)
EP (1) EP0632144B1 (en)
JP (1) JPH0778775A (en)
KR (1) KR100336917B1 (en)
DE (1) DE69420474T2 (en)

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DE69420474T2 (en) * 1993-06-30 2000-05-18 Applied Materials Inc Process for rinsing and pumping out a vacuum chamber to ultra-high vacuum
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US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
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US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
JP4666576B2 (en) 2004-11-08 2011-04-06 東京エレクトロン株式会社 Method for cleaning ceramic sprayed member, program for executing the method, storage medium, and ceramic sprayed member
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US7884032B2 (en) * 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US7846257B2 (en) * 2005-12-14 2010-12-07 Tokyo Electron Limited Method for cleaning substrate processing apparatus, substrate processing apparatus, program and recording medium having program recorded therein
US20100112814A1 (en) * 2006-09-06 2010-05-06 Sowmya Krishnan Pre-certified process chamber and method
JP4605718B2 (en) * 2006-09-14 2011-01-05 株式会社不二越 Pre-treatment method for vacuum carburizing furnace heating chamber
US8069817B2 (en) 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
JP5064119B2 (en) * 2007-06-07 2012-10-31 東京エレクトロン株式会社 Vacuuming method and storage medium
US7611930B2 (en) * 2007-08-17 2009-11-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
WO2009039382A1 (en) * 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
JP4855366B2 (en) * 2007-10-04 2012-01-18 株式会社アルバック Cleaning method for electrostatic chuck
US8158530B2 (en) * 2008-09-10 2012-04-17 Globalfoundries Inc. Methods for retaining metal-comprising materials using liquid chemistry dispense systems from which oxygen has been removed
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US9595695B2 (en) 2012-06-13 2017-03-14 Joled Inc. Method for removing impurities from inside of vacuum chamber, method for using vacuum apparatus, and method for manufacturing product
CN103853055B (en) * 2012-11-28 2016-12-28 北京北方微电子基地设备工艺研究中心有限责任公司 The real-time control method of reaction chamber baking and device
CN103050267B (en) * 2012-12-31 2016-01-20 厦门钨业股份有限公司 A kind of based on fine powder heat treated sintered Nd-Fe-B based magnet manufacture method
WO2014114974A1 (en) * 2013-01-22 2014-07-31 Essilor International (Compagnie Générale d'Optique) Machine for coating an optical article with a predetermined coating composition and method for using the machine
CN103981571B (en) * 2014-05-28 2017-06-23 英利能源（中国）有限公司 A kind of method for detecting polycrystalline cast ingot furnace apparatus air-tightness
JP2017017277A (en) * 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment device and heat treatment method
US20170062192A1 (en) * 2015-08-28 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Film forming apparatus
US10533264B1 (en) 2015-12-02 2020-01-14 General Graphene Corp. Apparatus for producing graphene and other 2D materials
US10892143B2 (en) 2016-10-21 2021-01-12 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater
KR20190002318A (en) * 2017-06-29 2019-01-08 가부시키가이샤 에바라 세이사꾸쇼 Facility system for exhaust system
US11631571B2 (en) 2019-08-12 2023-04-18 Kurt J. Lesker Company Ultra high purity conditions for atomic scale processing
US11757020B2 (en) * 2020-01-31 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11512387B2 (en) 2020-04-13 2022-11-29 Applied Materials, Inc. Methods and apparatus for passivating a target
US20230330716A1 (en) * 2022-04-13 2023-10-19 General Electric Company System and method for cleaning turbine components

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Also Published As

Publication number Publication date
EP0632144A3 (en) 1996-08-07
JPH0778775A (en) 1995-03-20
US5759287A (en) 1998-06-02
US5536330A (en) 1996-07-16
DE69420474D1 (en) 1999-10-14
EP0632144A2 (en) 1995-01-04
KR950001936A (en) 1995-01-04
EP0632144B1 (en) 1999-09-08
KR100336917B1 (en) 2002-11-23

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee