DE69417351D1 - Vorrichtung zur Strahlungsdetektion mit aneinanderstossenden Detektionselementen sowie Verfahren zur Herstellung dieser Vorrichtung - Google Patents

Vorrichtung zur Strahlungsdetektion mit aneinanderstossenden Detektionselementen sowie Verfahren zur Herstellung dieser Vorrichtung

Info

Publication number
DE69417351D1
DE69417351D1 DE69417351T DE69417351T DE69417351D1 DE 69417351 D1 DE69417351 D1 DE 69417351D1 DE 69417351 T DE69417351 T DE 69417351T DE 69417351 T DE69417351 T DE 69417351T DE 69417351 D1 DE69417351 D1 DE 69417351D1
Authority
DE
Germany
Prior art keywords
producing
abutting
detection
radiation detection
detection elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417351T
Other languages
English (en)
Other versions
DE69417351T2 (de
Inventor
Jean-Charles Cigna
Claudine Petitprez
Francois Marion
Michel Ravetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69417351D1 publication Critical patent/DE69417351D1/de
Publication of DE69417351T2 publication Critical patent/DE69417351T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
DE69417351T 1993-11-17 1994-11-16 Vorrichtung zur Strahlungsdetektion mit aneinanderstossenden Detektionselementen sowie Verfahren zur Herstellung dieser Vorrichtung Expired - Fee Related DE69417351T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9313721A FR2712693B1 (fr) 1993-11-17 1993-11-17 Dispositif de détection de rayonnement, à éléments de détection aboutés, et procédé de fabrication de ce dispositif.

Publications (2)

Publication Number Publication Date
DE69417351D1 true DE69417351D1 (de) 1999-04-29
DE69417351T2 DE69417351T2 (de) 1999-10-07

Family

ID=9452939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417351T Expired - Fee Related DE69417351T2 (de) 1993-11-17 1994-11-16 Vorrichtung zur Strahlungsdetektion mit aneinanderstossenden Detektionselementen sowie Verfahren zur Herstellung dieser Vorrichtung

Country Status (5)

Country Link
US (1) US5591959A (de)
EP (1) EP0654825B1 (de)
JP (1) JPH07218337A (de)
DE (1) DE69417351T2 (de)
FR (1) FR2712693B1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438256B1 (ko) * 1995-12-18 2004-08-25 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
US5856914A (en) * 1996-07-29 1999-01-05 National Semiconductor Corporation Micro-electronic assembly including a flip-chip mounted micro-device and method
GB2318448B (en) * 1996-10-18 2002-01-16 Simage Oy Imaging detector and method of production
US5937014A (en) * 1997-03-27 1999-08-10 Telefonaktiebolaget Lm Ericsson Self-synchronizing equalization techniques and systems
US6459084B1 (en) 1997-05-30 2002-10-01 University Of Central Florida Area receiver with antenna-coupled infrared sensors
US6091138A (en) * 1998-02-27 2000-07-18 Advanced Micro Devices, Inc. Multi-chip packaging using bump technology
US6713788B2 (en) * 1998-03-30 2004-03-30 Micron Technology, Inc. Opto-electric mounting apparatus
US6380563B2 (en) 1998-03-30 2002-04-30 Micron Technology, Inc. Opto-electric mounting apparatus
US6232667B1 (en) 1999-06-29 2001-05-15 International Business Machines Corporation Technique for underfilling stacked chips on a cavity MLC module
US6369448B1 (en) 2000-01-21 2002-04-09 Lsi Logic Corporation Vertically integrated flip chip semiconductor package
US6351027B1 (en) * 2000-02-29 2002-02-26 Agilent Technologies, Inc. Chip-mounted enclosure
US6828545B1 (en) * 2001-05-15 2004-12-07 Raytheon Company Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication
FR2838565B1 (fr) * 2002-04-12 2004-06-25 Commissariat Energie Atomique Matrice de photodetecteurs, a pixels isoles et grille de stockage, hybridee sur un circuit de lecture
US20040012094A1 (en) * 2002-07-18 2004-01-22 Harper Timothy V. Flip-chip integrated circuit package and method of assembly
US20100248269A1 (en) * 2009-03-30 2010-09-30 New York Blood Center Detection of fibrin and fibrinogen degradation products and associated methods of production and use for the detection and monitoring of cancer
DE102009060217B3 (de) 2009-12-23 2011-06-22 Pyreos Ltd. Verfahren zum Herstellen eines Infrarotlichtdetektors
DE102010061182B4 (de) * 2010-12-13 2013-02-07 Presens Precision Sensing Gmbh Sensoranordnung, Verfahren und Messsystem zur Erfassung der Verteilung wenigstens einer Veränderlichen eines Objekts
CN103415758A (zh) * 2011-02-18 2013-11-27 日本电气株式会社 红外检测传感器阵列以及红外检测装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463262A (en) * 1981-09-21 1984-07-31 The United States Of America As Represented By The Secretary Of The Air Force Thick film radiation detector
JPS61135280A (ja) * 1984-12-06 1986-06-23 Toshiba Corp 三次元撮像素子
JPH0654802B2 (ja) * 1985-04-05 1994-07-20 セイコーエプソン株式会社 固体撮像装置
FR2581251B1 (fr) * 1985-04-30 1987-09-11 Thomson Csf Dispositif d'aboutement optique de detecteurs photosensibles
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
US4695716A (en) * 1985-12-13 1987-09-22 Xerox Corporation Image sensor array for assembly with like arrays to form a longer array
US4807021A (en) * 1986-03-10 1989-02-21 Kabushiki Kaisha Toshiba Semiconductor device having stacking structure
FR2644632B1 (fr) * 1988-04-22 1994-06-17 Commissariat Energie Atomique Element de detection constitue de barrettes de detecteurs
US4987295A (en) * 1989-03-31 1991-01-22 General Electric Company Multichip imager with improved optical performance near the butt region
US5065245A (en) * 1990-04-30 1991-11-12 Eastman Kodak Company Modular image sensor array
US5120960A (en) * 1991-04-25 1992-06-09 Westinghouse Electric Corp. Infrared image detecting device and method
US5313055A (en) * 1991-09-30 1994-05-17 Fuji Xerox Co., Ltd. Two-dimensional image read/display device

Also Published As

Publication number Publication date
EP0654825A1 (de) 1995-05-24
FR2712693A1 (fr) 1995-05-24
US5591959A (en) 1997-01-07
DE69417351T2 (de) 1999-10-07
FR2712693B1 (fr) 1995-12-15
EP0654825B1 (de) 1999-03-24
JPH07218337A (ja) 1995-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee