DE69410389T2 - Bauelement mit kontrollierbarer Leitung und mit Mehrfachtunnelübergang - Google Patents
Bauelement mit kontrollierbarer Leitung und mit MehrfachtunnelübergangInfo
- Publication number
- DE69410389T2 DE69410389T2 DE1994610389 DE69410389T DE69410389T2 DE 69410389 T2 DE69410389 T2 DE 69410389T2 DE 1994610389 DE1994610389 DE 1994610389 DE 69410389 T DE69410389 T DE 69410389T DE 69410389 T2 DE69410389 T2 DE 69410389T2
- Authority
- DE
- Germany
- Prior art keywords
- component
- multiple tunnel
- tunnel transition
- controllable line
- controllable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939321326A GB9321326D0 (en) | 1993-10-15 | 1993-10-15 | Controllable conduction device with multiple tunnel junction |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69410389D1 DE69410389D1 (de) | 1998-06-25 |
DE69410389T2 true DE69410389T2 (de) | 1998-11-19 |
Family
ID=10743625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1994610389 Expired - Fee Related DE69410389T2 (de) | 1993-10-15 | 1994-10-17 | Bauelement mit kontrollierbarer Leitung und mit Mehrfachtunnelübergang |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0649174B1 (de) |
DE (1) | DE69410389T2 (de) |
GB (1) | GB9321326D0 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6060723A (en) * | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
US6169308B1 (en) | 1996-11-15 | 2001-01-02 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
US6642574B2 (en) | 1997-10-07 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
EP0892440A1 (de) | 1997-07-18 | 1999-01-20 | Hitachi Europe Limited | Bauelement mit kontrollierbarer Leitung |
GB9724642D0 (en) | 1997-11-21 | 1998-01-21 | British Tech Group | Single electron devices |
US6744082B1 (en) * | 2000-05-30 | 2004-06-01 | Micron Technology, Inc. | Static pass transistor logic with transistors with multiple vertical gates |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023671A (en) * | 1989-03-27 | 1991-06-11 | International Business Machines Corporation | Microstructures which provide superlattice effects and one-dimensional carrier gas channels |
JPH04335538A (ja) * | 1991-05-10 | 1992-11-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
1993
- 1993-10-15 GB GB939321326A patent/GB9321326D0/en active Pending
-
1994
- 1994-10-17 DE DE1994610389 patent/DE69410389T2/de not_active Expired - Fee Related
- 1994-10-17 EP EP19940307587 patent/EP0649174B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69410389D1 (de) | 1998-06-25 |
EP0649174A1 (de) | 1995-04-19 |
EP0649174B1 (de) | 1998-05-20 |
GB9321326D0 (en) | 1993-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69428577D1 (de) | Tunneldiode und Speicheranordnung mit derselben | |
DE69432359D1 (de) | Katheter mit kleinem durchmesser und hohem drehmoment | |
FI944310A0 (fi) | Heteroaryyliamino- ja heteroaryylisuolfonamidosubstituoituja 3-bentsyyliaminometyylipiperidiinejä ja vastaavia yhdisteitä | |
DE69425782T2 (de) | Hyterosalpingographie und selektive Salpingographie | |
DE69420727T2 (de) | Tuner mit direktumsetzung | |
DE69731522D1 (de) | Gegenstand mit holographischen und rückstrahlendfen merkmalen | |
NO954748D0 (no) | Polyesterblanding | |
DE69532924D1 (de) | Elektrochromische schicht und vorrichtungen mit derselben | |
FI944624A0 (fi) | 4-aryyliaminobentsopyraani- ja niiden kaltaisia yhdisteitä | |
DE69705141D1 (de) | Wärmehemmende Beschichtung mit verbesserter Unterschicht und Gegenstände mit dieser Wärmehemmende Beschichtung | |
DE4493074T1 (de) | Einspritzsystem mit konzentrischen Schlitzen und zugehörigen Einspritzelementen | |
FI943734A (fi) | Uudet makrolidit ja niiden käyttö | |
DE69700742D1 (de) | Drehmaschine mit drei achsen und polaire kinematik | |
DE29520292U1 (de) | Gamma-Kamera mit Annäherungs- und Sicherheitsebenen | |
DE69427193T2 (de) | Verfahrensauswahl mit mehreren eingangspunkten | |
DE69410389D1 (de) | Bauelement mit kontrollierbarer Leitung und mit Mehrfachtunnelübergang | |
BR9104476A (pt) | Carretel portador de elementos filiformes e similares | |
DE59403085D1 (de) | Steuerbares Supraleiter-Bauelement | |
DE69324681D1 (de) | Entproteinisierung mit azlacton-gekoppelten funktionsträgern | |
DE69313536T2 (de) | Elektrooptische Abtasteinrichtung und mit der Abtasteinrichtung versehener Spieler | |
DE69407922D1 (de) | Supraleiter | |
DE69321301D1 (de) | Flüssigkeit mit gleichzeitig magnetischen und elektrorheologischen Effekten | |
KR950009390U (ko) | 승 · 하강식 등기구를 갖춘 전주 | |
DE9310710U1 (de) | Handschuh mit funktioneller innenflaeche | |
DE9319704U1 (de) | Heizkörper mit variabler Versorgung und Gestaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HITACHI, LTD., TOKYO, JP |
|
8339 | Ceased/non-payment of the annual fee |