DE69402186D1 - Herstellungsverfahren für diodengepumpte laser unter verwendung von ionenstrahlauftragung - Google Patents

Herstellungsverfahren für diodengepumpte laser unter verwendung von ionenstrahlauftragung

Info

Publication number
DE69402186D1
DE69402186D1 DE69402186T DE69402186T DE69402186D1 DE 69402186 D1 DE69402186 D1 DE 69402186D1 DE 69402186 T DE69402186 T DE 69402186T DE 69402186 T DE69402186 T DE 69402186T DE 69402186 D1 DE69402186 D1 DE 69402186D1
Authority
DE
Germany
Prior art keywords
diode
manufacturing
pumped laser
ion radiation
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69402186T
Other languages
English (en)
Other versions
DE69402186T2 (de
Inventor
Carol Ford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69402186D1 publication Critical patent/DE69402186D1/de
Publication of DE69402186T2 publication Critical patent/DE69402186T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Lasers (AREA)
DE69402186T 1993-03-26 1994-03-25 Herstellungsverfahren für diodengepumpte laser unter verwendung von ionenstrahlauftragung Expired - Fee Related DE69402186T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/037,959 US5418182A (en) 1993-03-26 1993-03-26 Method of fabricating diode lasers using ion beam deposition
PCT/US1994/003296 WO1994023477A1 (en) 1993-03-26 1994-03-25 Method of fabricating diode lasers using ion beam deposition

Publications (2)

Publication Number Publication Date
DE69402186D1 true DE69402186D1 (de) 1997-04-24
DE69402186T2 DE69402186T2 (de) 1997-09-04

Family

ID=21897288

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402186T Expired - Fee Related DE69402186T2 (de) 1993-03-26 1994-03-25 Herstellungsverfahren für diodengepumpte laser unter verwendung von ionenstrahlauftragung

Country Status (5)

Country Link
US (1) US5418182A (de)
EP (1) EP0692151B1 (de)
CA (1) CA2162886A1 (de)
DE (1) DE69402186T2 (de)
WO (1) WO1994023477A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5847865A (en) * 1997-02-18 1998-12-08 Regents Of The University Of Minnesota Waveguide optical amplifier
US6271626B1 (en) 1998-08-10 2001-08-07 Honeywell Inc. Electroluminescent material comprising a doped conducting oxide
US6160824A (en) * 1998-11-02 2000-12-12 Maxios Laser Corporation Laser-pumped compound waveguide lasers and amplifiers
GB9928474D0 (en) * 1999-12-03 2000-02-02 Secr Defence Brit Laser effects and laser devices
GB9928475D0 (en) * 1999-12-03 2000-02-02 Secr Defence Brit Laser devices
US20020089758A1 (en) * 2001-01-05 2002-07-11 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
US4073675A (en) * 1976-07-21 1978-02-14 Bell Telephone Laboratories, Incorporated Waveguiding epitaxial LiNbO3 films
US4784722A (en) * 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
US4673475A (en) * 1985-06-28 1987-06-16 The Standard Oil Company Dual ion beam deposition of dense films
US4664769A (en) * 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPS6360578A (ja) * 1986-09-01 1988-03-16 Sumitomo Electric Ind Ltd 固体レ−ザ素子
JPS6481918A (en) * 1987-09-25 1989-03-28 Rikagaku Kenkyusho Manufacture of three-dimensional optical circuit element
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
US5070507A (en) * 1990-03-02 1991-12-03 Amoco Corporation Three micron laser
US5070505A (en) * 1990-04-30 1991-12-03 Amoco Corporation Self-doubling micro-laser
JP2755471B2 (ja) * 1990-06-29 1998-05-20 日立電線株式会社 希土類元素添加光導波路及びその製造方法
US5062117A (en) * 1990-07-11 1991-10-29 Amoco Corporation Tailored laser system
JPH04131805A (ja) * 1990-09-25 1992-05-06 Sumitomo Electric Ind Ltd 石英系光導波路及びその製造方法
US5141549A (en) * 1991-05-17 1992-08-25 The Charles Stark Draper Laboratories Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
US5240583A (en) * 1992-01-14 1993-08-31 Honeywell Inc. Apparatus to deposit multilayer films
US5308461A (en) * 1992-01-14 1994-05-03 Honeywell Inc. Method to deposit multilayer films

Also Published As

Publication number Publication date
CA2162886A1 (en) 1994-10-13
EP0692151A1 (de) 1996-01-17
US5418182A (en) 1995-05-23
EP0692151B1 (de) 1997-03-19
DE69402186T2 (de) 1997-09-04
WO1994023477A1 (en) 1994-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee