DE69330420D1 - Verfahren zum Betrieb eines ballistischen Heteroübergang-Transistors - Google Patents

Verfahren zum Betrieb eines ballistischen Heteroübergang-Transistors

Info

Publication number
DE69330420D1
DE69330420D1 DE69330420T DE69330420T DE69330420D1 DE 69330420 D1 DE69330420 D1 DE 69330420D1 DE 69330420 T DE69330420 T DE 69330420T DE 69330420 T DE69330420 T DE 69330420T DE 69330420 D1 DE69330420 D1 DE 69330420D1
Authority
DE
Germany
Prior art keywords
ballistic
operating
heterojunction transistor
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69330420T
Other languages
English (en)
Other versions
DE69330420T2 (de
Inventor
Anatoly A Grinberg
Serge Luryi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69330420D1 publication Critical patent/DE69330420D1/de
Application granted granted Critical
Publication of DE69330420T2 publication Critical patent/DE69330420T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69330420T 1992-11-25 1993-11-18 Verfahren zum Betrieb eines ballistischen Heteroübergang-Transistors Expired - Lifetime DE69330420T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/981,588 US5304816A (en) 1992-11-25 1992-11-25 Article comprising a "ballistic" heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
DE69330420D1 true DE69330420D1 (de) 2001-08-16
DE69330420T2 DE69330420T2 (de) 2002-05-23

Family

ID=25528491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330420T Expired - Lifetime DE69330420T2 (de) 1992-11-25 1993-11-18 Verfahren zum Betrieb eines ballistischen Heteroübergang-Transistors

Country Status (4)

Country Link
US (1) US5304816A (de)
EP (1) EP0600643B1 (de)
JP (1) JP2851994B2 (de)
DE (1) DE69330420T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19824110A1 (de) * 1998-05-29 1999-12-09 Daimler Chrysler Ag Resonanz Phasen Transistor mit Laufzeitverzögerung
JP2005229074A (ja) * 2004-02-16 2005-08-25 Toshiba Corp バイポーラ型トランジスタ
US7902635B2 (en) * 2005-07-11 2011-03-08 Wisconsin Alumni Research Foundation High-power-gain, bipolar transistor amplifier

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866488A (en) * 1985-03-29 1989-09-12 Texas Instruments Incorporated Ballistic transport filter and device
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
US4829343A (en) * 1987-07-17 1989-05-09 American Telephone & Telegraph Company, At&T Bell Laboratories Hot electron transistor
US4958208A (en) * 1987-08-12 1990-09-18 Nec Corporation Bipolar transistor with abrupt potential discontinuity in collector region
CA1303754C (en) * 1988-09-07 1992-06-16 American Telephone And Telegraph Company Bipolar hot electron transistor
US5206524A (en) * 1988-09-28 1993-04-27 At&T Bell Laboratories Heterostructure bipolar transistor
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor
EP0445475B1 (de) * 1990-02-20 1998-08-26 Kabushiki Kaisha Toshiba Bipolartransistor mit Heteroübergang
JPH0669220A (ja) * 1991-10-09 1994-03-11 Furukawa Electric Co Ltd:The ヘテロ接合ＧａＡｓ系バイポーラトランジスタ

Also Published As

Publication number Publication date
EP0600643A2 (de) 1994-06-08
JPH06216147A (ja) 1994-08-05
EP0600643B1 (de) 2001-07-11
DE69330420T2 (de) 2002-05-23
EP0600643A3 (de) 1995-01-11
JP2851994B2 (ja) 1999-01-27
US5304816A (en) 1994-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition