DE69314296T2 - Verfahren zur Bestimmung einer vorgegebenen Eigenschaft einer Probe eines Materials - Google Patents

Verfahren zur Bestimmung einer vorgegebenen Eigenschaft einer Probe eines Materials

Info

Publication number
DE69314296T2
DE69314296T2 DE69314296T DE69314296T DE69314296T2 DE 69314296 T2 DE69314296 T2 DE 69314296T2 DE 69314296 T DE69314296 T DE 69314296T DE 69314296 T DE69314296 T DE 69314296T DE 69314296 T2 DE69314296 T2 DE 69314296T2
Authority
DE
Germany
Prior art keywords
sample
determining
specified property
property
specified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314296T
Other languages
English (en)
Other versions
DE69314296D1 (de
Inventor
Paul Frederick Fewster
Jos G E Dr Klappe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69314296D1 publication Critical patent/DE69314296D1/de
Publication of DE69314296T2 publication Critical patent/DE69314296T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G01L1/248—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet using infrared
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/25—Measuring force or stress, in general using wave or particle radiation, e.g. X-rays, microwaves, neutrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/302—Accessories, mechanical or electrical features comparative arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/345—Accessories, mechanical or electrical features mathematical transformations on beams or signals, e.g. Fourier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/607—Specific applications or type of materials strain
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69314296T 1992-12-21 1993-12-14 Verfahren zur Bestimmung einer vorgegebenen Eigenschaft einer Probe eines Materials Expired - Fee Related DE69314296T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929226552A GB9226552D0 (en) 1992-12-21 1992-12-21 A method of determining a given characteristic of a material sample

Publications (2)

Publication Number Publication Date
DE69314296D1 DE69314296D1 (de) 1997-11-06
DE69314296T2 true DE69314296T2 (de) 1998-04-02

Family

ID=10726922

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314296T Expired - Fee Related DE69314296T2 (de) 1992-12-21 1993-12-14 Verfahren zur Bestimmung einer vorgegebenen Eigenschaft einer Probe eines Materials

Country Status (5)

Country Link
US (1) US5442676A (de)
EP (1) EP0603943B1 (de)
JP (1) JPH06229950A (de)
DE (1) DE69314296T2 (de)
GB (1) GB9226552D0 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112014004515B4 (de) 2013-09-30 2024-01-25 Sk Siltron Co., Ltd. Verfahren zum Messen der Tiefe einer Beschädigung eines Wafers

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2289833B (en) * 1994-05-24 1998-04-22 Mitsubishi Electric Corp Method and apparatus for evaluating thin-film multilayer structure
JPH0843328A (ja) * 1994-05-24 1996-02-16 Mitsubishi Electric Corp 薄膜多層構造の評価方法，評価ソフト，及び評価装置
EP0720737B1 (de) * 1994-06-25 2002-01-16 Koninklijke Philips Electronics N.V. Analyse einer materialprobe
JPH09297112A (ja) * 1996-03-08 1997-11-18 Mitsubishi Heavy Ind Ltd 構造パラメータ解析装置及び解析方法
US6226348B1 (en) * 1998-12-15 2001-05-01 Philips Electronics North America Corporation X-ray diffractometer method for determining thickness of multiple non-metallic crystalline layers and fourier transform method
US6587794B1 (en) * 1999-07-30 2003-07-01 Koninklijke Philips Electronics N.V. Method for measuring thin metal films
FR2798195B1 (fr) * 1999-09-02 2001-11-16 St Microelectronics Sa Caracterisation de zones de silicium-germanium sur silicium
JP3953754B2 (ja) * 2001-06-27 2007-08-08 株式会社リガク 密度不均一試料解析方法ならびにその装置およびシステム
GB0116825D0 (en) * 2001-07-10 2001-08-29 Koninl Philips Electronics Nv Determination of material parameters
FR2828933A1 (fr) * 2001-08-27 2003-02-28 Corning Inc Procede de determination de la qualite optique d'un monocristal de fluorure et element optique
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
KR100955434B1 (ko) * 2002-12-27 2010-05-06 리베라 인코퍼레이티드 측정된 기초 스펙트럼을 사용하거나 및/또는 획득된스펙트럼에 기초한 박막의 비파괴적 특성화
DE10346433B4 (de) * 2003-10-07 2006-05-11 Bruker Axs Gmbh Analytisches Verfahren zum Bestimmen von kristallographischen Phasen einer Messprobe
US7265754B2 (en) * 2003-11-12 2007-09-04 Proto Manufacturing Ltd. Method for displaying material characteristic information
JP3914925B2 (ja) * 2004-01-28 2007-05-16 株式会社リガク 膜厚測定方法及び装置
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US20060187466A1 (en) * 2005-02-18 2006-08-24 Timbre Technologies, Inc. Selecting unit cell configuration for repeating structures in optical metrology
US7355728B2 (en) * 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures
GB2481950B (en) * 2009-04-14 2017-08-23 Rigaku Denki Co Ltd Surface microstructure measurement method, surface microstructure measurement data analysis method and surface microstructure measurement system.
US8716037B2 (en) 2010-12-14 2014-05-06 International Business Machines Corporation Measurement of CMOS device channel strain by X-ray diffraction
US9022651B2 (en) * 2013-07-12 2015-05-05 Bruker Axs, Inc. X-ray diffraction-based defective pixel correction method using an active pixel array sensor
JP6377582B2 (ja) * 2015-08-06 2018-08-22 株式会社リガク Ｘ線分析の操作ガイドシステム、操作ガイド方法、及び操作ガイドプログラム
US9939393B2 (en) * 2015-09-28 2018-04-10 United Technologies Corporation Detection of crystallographic properties in aerospace components

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095103A (en) * 1976-03-12 1978-06-13 Northwestern University Apparatus and method for determination of residual stress in crystalline substances
US4561062A (en) * 1983-02-18 1985-12-24 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Energy, Mines And Resources Stress measurement by X-ray diffractometry
US4662222A (en) * 1984-12-21 1987-05-05 Johnson Steven A Apparatus and method for acoustic imaging using inverse scattering techniques
US4821301A (en) * 1986-02-28 1989-04-11 Duke University X-ray reflection method and apparatus for chemical analysis of thin surface layers
US4974209A (en) * 1988-09-02 1990-11-27 The Perkin-Elmer Corporation Interactive smoothing system
US5148458A (en) * 1990-01-18 1992-09-15 Clayton Ruud Method and apparatus for simultaneous phase composition and residual stress measurement by x-ray diffraction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112014004515B4 (de) 2013-09-30 2024-01-25 Sk Siltron Co., Ltd. Verfahren zum Messen der Tiefe einer Beschädigung eines Wafers

Also Published As

Publication number Publication date
US5442676A (en) 1995-08-15
GB9226552D0 (en) 1993-02-17
JPH06229950A (ja) 1994-08-19
EP0603943B1 (de) 1997-10-01
EP0603943A1 (de) 1994-06-29
DE69314296D1 (de) 1997-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee