DE69314065T2 - Photoempfänger für frequenzmodulierte optische Signale, entsprechende Sender-Empfänger und optische Verbindung - Google Patents

Photoempfänger für frequenzmodulierte optische Signale, entsprechende Sender-Empfänger und optische Verbindung

Info

Publication number
DE69314065T2
DE69314065T2 DE69314065T DE69314065T DE69314065T2 DE 69314065 T2 DE69314065 T2 DE 69314065T2 DE 69314065 T DE69314065 T DE 69314065T DE 69314065 T DE69314065 T DE 69314065T DE 69314065 T2 DE69314065 T2 DE 69314065T2
Authority
DE
Germany
Prior art keywords
receiver
photo
frequency
corresponding transmitter
optical signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314065T
Other languages
English (en)
Other versions
DE69314065D1 (de
Inventor
Hisao Nakajima
Radhouane Derouiche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69314065D1 publication Critical patent/DE69314065D1/de
Application granted granted Critical
Publication of DE69314065T2 publication Critical patent/DE69314065T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0028—Laser diodes used as detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE69314065T 1992-01-24 1993-01-21 Photoempfänger für frequenzmodulierte optische Signale, entsprechende Sender-Empfänger und optische Verbindung Expired - Fee Related DE69314065T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9200753A FR2686753B1 (fr) 1992-01-24 1992-01-24 Photorecepteur pour signaux optiques modules en frequence, emetteur-recepteur et liaison optique correspondants.

Publications (2)

Publication Number Publication Date
DE69314065D1 DE69314065D1 (de) 1997-10-30
DE69314065T2 true DE69314065T2 (de) 1998-03-26

Family

ID=9425936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314065T Expired - Fee Related DE69314065T2 (de) 1992-01-24 1993-01-21 Photoempfänger für frequenzmodulierte optische Signale, entsprechende Sender-Empfänger und optische Verbindung

Country Status (5)

Country Link
US (1) US5412496A (de)
EP (1) EP0553029B1 (de)
JP (1) JP3224622B2 (de)
DE (1) DE69314065T2 (de)
FR (1) FR2686753B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD378085S (en) * 1993-11-16 1997-02-18 International Business Machines Corporation Optical transceiver card
TW289175B (de) * 1995-04-07 1996-10-21 Mitsubishi Electric Corp
US5647039A (en) * 1995-12-14 1997-07-08 Lucent Technologies Inc. Optical switching system and devices using a long period grating
US6788725B2 (en) * 2001-11-14 2004-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US20050025210A1 (en) * 2001-11-14 2005-02-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US6608855B1 (en) * 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section
US7010330B1 (en) * 2003-03-01 2006-03-07 Theta Microelectronics, Inc. Power dissipation reduction in wireless transceivers
CN101399615B (zh) * 2007-09-26 2012-01-25 华为技术有限公司 半导体光器件以及时钟恢复方法和装置
KR102119589B1 (ko) 2015-06-24 2020-06-09 한국전자통신연구원 코히어런트 광통신용 광학 위상 다이버시티 수신기

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260024A (ja) * 1984-06-07 1985-12-23 Kokusai Denshin Denwa Co Ltd <Kdd> 光変調素子
JPS6150386A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 光半導体装置
JPH0632346B2 (ja) * 1988-03-16 1994-04-27 三菱電機株式会社 半導体レーザ
US5020153A (en) * 1989-02-08 1991-05-28 At&T Bell Laboratories Tunable narrowband receiver utilizing distributed Bragg reflector laser structure
US4972514A (en) * 1989-02-08 1990-11-20 At&T Bell Laboratories Full duplex lightwave communication system
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
EP0402907A3 (de) * 1989-06-14 1991-09-25 Hitachi, Ltd. Halbleiter-Laservorrichtung
US5253309A (en) * 1989-06-23 1993-10-12 Harmonic Lightwaves, Inc. Optical distribution of analog and digital signals using optical modulators with complementary outputs
JP2966485B2 (ja) * 1989-07-15 1999-10-25 富士通株式会社 波長可変コヒーレント光源およびその製造方法
FR2652465B1 (fr) * 1989-09-27 1991-11-15 France Etat Photorecepteur pour signaux optiques modules en frequence.
FR2662883B1 (fr) * 1990-06-05 1992-08-21 France Etat Systeme de transmission bidirectionnelle a composants lasers identiques.
US5185759A (en) * 1990-06-12 1993-02-09 Kabushiki Kaisha Toshiba Phase-shifted distributed feedback type semiconductor laser device
US5272714A (en) * 1991-12-12 1993-12-21 Wisconsin Alumni Research Foundation Distributed phase shift semiconductor laser
JPH1187889A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Ind Co Ltd 回路基板とその製造方法とステンシル版

Also Published As

Publication number Publication date
FR2686753A1 (fr) 1993-07-30
JPH05265067A (ja) 1993-10-15
FR2686753B1 (fr) 1994-04-08
JP3224622B2 (ja) 2001-11-05
EP0553029A1 (de) 1993-07-28
DE69314065D1 (de) 1997-10-30
US5412496A (en) 1995-05-02
EP0553029B1 (de) 1997-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee