DE69308070T2 - Verfahren und Vorrichtung zur Modulation und Verstärkung von Lichtstrahlen - Google Patents

Verfahren und Vorrichtung zur Modulation und Verstärkung von Lichtstrahlen

Info

Publication number
DE69308070T2
DE69308070T2 DE69308070T DE69308070T DE69308070T2 DE 69308070 T2 DE69308070 T2 DE 69308070T2 DE 69308070 T DE69308070 T DE 69308070T DE 69308070 T DE69308070 T DE 69308070T DE 69308070 T2 DE69308070 T2 DE 69308070T2
Authority
DE
Germany
Prior art keywords
modulating
light beams
amplifying light
amplifying
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308070T
Other languages
English (en)
Other versions
DE69308070D1 (de
Inventor
Rama Raj
Marcel Bensoussan
Jean-Louis Oudar
Juan-Ariel Levenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69308070D1 publication Critical patent/DE69308070D1/de
Publication of DE69308070T2 publication Critical patent/DE69308070T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69308070T 1992-06-15 1993-06-11 Verfahren und Vorrichtung zur Modulation und Verstärkung von Lichtstrahlen Expired - Fee Related DE69308070T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR929207182A FR2692374B1 (fr) 1992-06-15 1992-06-15 Procede et dispositif de modulation et d'amplification de faisceaux lumineux.

Publications (2)

Publication Number Publication Date
DE69308070D1 DE69308070D1 (de) 1997-03-27
DE69308070T2 true DE69308070T2 (de) 1997-07-10

Family

ID=9430719

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308070T Expired - Fee Related DE69308070T2 (de) 1992-06-15 1993-06-11 Verfahren und Vorrichtung zur Modulation und Verstärkung von Lichtstrahlen

Country Status (5)

Country Link
US (1) US5414726A (de)
EP (1) EP0575227B1 (de)
JP (1) JPH0653592A (de)
DE (1) DE69308070T2 (de)
FR (1) FR2692374B1 (de)

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US5963358A (en) * 1995-04-26 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor device and method for its operation
US5740287A (en) * 1995-12-07 1998-04-14 The United States Of America As Represented By The Secretary Of The Army Optical switch that utilizes one-dimensional, nonlinear, multilayer dielectric stacks
US5909303A (en) * 1996-01-04 1999-06-01 The Board Of Trustees Of The Leland Stanford Junior University Optical modulator and optical modulator array
US5657148A (en) * 1996-05-07 1997-08-12 Lucent Technologies Inc. Apparatus and method for a single-port modulator having amplification
US6211993B1 (en) 1996-05-20 2001-04-03 Nz Applied Technologies Corporation Thin film ferroelectric light modulators
JPH09326528A (ja) * 1996-06-05 1997-12-16 Kokusai Denshin Denwa Co Ltd <Kdd> 短光パルス波形整形装置
FR2756105B1 (fr) * 1996-11-19 1999-03-26 Commissariat Energie Atomique Detecteur multispectral a cavite resonante
FR2756384B1 (fr) * 1996-11-28 1999-02-12 Minot Christophe Dispositif bidirectionnel de transposition entre des signaux optiques et des signaux electriques, pour systeme de communication
US5904495A (en) * 1997-06-11 1999-05-18 Massachusetts Institute Of Technology Interconnection technique for hybrid integrated devices
US6028693A (en) * 1998-01-14 2000-02-22 University Of Alabama In Huntsville Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus
US6621817B1 (en) * 1999-07-06 2003-09-16 Texas Instruments Incorporated Transport packet parser
WO2001031756A1 (en) 1999-10-29 2001-05-03 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
WO2001091254A2 (en) * 2000-05-22 2001-11-29 Massachusetts Institute Of Technology Microcavity amplifiers
US6858553B2 (en) 2000-10-03 2005-02-22 Nippon Sheet Glass Co., Ltd. Glass composition
US6693933B2 (en) 2001-03-15 2004-02-17 Honeywell International Inc. Vertical cavity master oscillator power amplifier
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
WO2003065410A2 (en) * 2002-01-31 2003-08-07 Tokyo Electron Limited Method and apparatus for monitoring and verifying equipment status
US6822798B2 (en) * 2002-08-09 2004-11-23 Optron Systems, Inc. Tunable optical filter
US20040083192A1 (en) * 2002-10-29 2004-04-29 Elliott Stephen J. High availability link testing device
US6987306B2 (en) * 2003-07-17 2006-01-17 Epitaxial Technologies Monolithic photoreceiver technology for free space optical networks
US7116463B2 (en) * 2004-07-15 2006-10-03 Optron Systems, Inc. High angular deflection micro-mirror system
JP2008527631A (ja) * 2004-12-30 2008-07-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ミラースタックを有する電子デバイス
US7983572B2 (en) * 2005-06-30 2011-07-19 Finisar Corporation Electro-absorption modulator integrated with a vertical cavity surface emitting laser
KR101941170B1 (ko) * 2011-12-12 2019-01-23 삼성전자주식회사 다중 패브리-페로 공진 모드와 다중 흡수 모드를 이용한 투과형 이미지 변조기
US20150132008A1 (en) * 2013-11-11 2015-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Via-less multi-layer integrated circuit with inter-layer interconnection
CN113670863A (zh) * 2021-08-17 2021-11-19 北京计算机技术及应用研究所 二维半导体材料中光生载流子的差分反射探测方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632785A (en) * 1979-08-25 1981-04-02 Nippon Telegr & Teleph Corp <Ntt> Light amplifier
US4518934A (en) * 1982-02-16 1985-05-21 At&T Bell Laboratories Optical bistable device
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
US4546244A (en) * 1984-03-14 1985-10-08 At&T Bell Laboratories Nonlinear and bistable optical device
JPS63148687A (ja) * 1986-12-12 1988-06-21 Nec Corp 光デバイスおよび光制御方法
SU1755246A1 (ru) * 1988-12-13 1992-08-15 Всесоюзный научно-исследовательский институт электроизмерительных приборов Оптический транзистор
GB8904185D0 (en) * 1989-02-23 1989-04-05 British Telecomm Fabry-perot modulator
US5008717A (en) * 1989-03-03 1991-04-16 At&T Bell Laboratories Semiconductor device including cascaded modulation-doped quantum well heterostructures
JP3154418B2 (ja) * 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
JPH0460522A (ja) * 1990-06-29 1992-02-26 Toshiba Corp 半導体光増幅器
US5132982A (en) * 1991-05-09 1992-07-21 Bell Communications Research, Inc. Optically controlled surface-emitting lasers
US5323019A (en) * 1993-04-20 1994-06-21 The United States Of America As Represented By The Secretary Of The Army All optical multiple quantum well optical modulator

Also Published As

Publication number Publication date
EP0575227A1 (de) 1993-12-22
EP0575227B1 (de) 1997-02-12
US5414726A (en) 1995-05-09
JPH0653592A (ja) 1994-02-25
FR2692374B1 (fr) 1994-07-29
DE69308070D1 (de) 1997-03-27
FR2692374A1 (fr) 1993-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee