DE69303871D1 - Mikrolaser auf Siliziumbasis mit dotierten Glasdünnschichtfilmen - Google Patents
Mikrolaser auf Siliziumbasis mit dotierten GlasdünnschichtfilmenInfo
- Publication number
- DE69303871D1 DE69303871D1 DE69303871T DE69303871T DE69303871D1 DE 69303871 D1 DE69303871 D1 DE 69303871D1 DE 69303871 T DE69303871 T DE 69303871T DE 69303871 T DE69303871 T DE 69303871T DE 69303871 D1 DE69303871 D1 DE 69303871D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- doped glass
- glass thin
- film films
- microlaser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
- H01S3/165—Solid materials characterised by a crystal matrix halide with the formula MF2, wherein M is Ca, Sr or Ba
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
- H01S5/3224—Si
- H01S5/3227—Si porous Si
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/945,991 US5369657A (en) | 1992-09-15 | 1992-09-15 | Silicon-based microlaser by doped thin films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69303871D1 true DE69303871D1 (de) | 1996-09-05 |
DE69303871T2 DE69303871T2 (de) | 1996-12-12 |
Family
ID=25483801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69303871T Expired - Fee Related DE69303871T2 (de) | 1992-09-15 | 1993-09-15 | Mikrolaser auf Siliziumbasis mit dotierten Glasdünnschichtfilmen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5369657A (de) |
EP (1) | EP0588327B1 (de) |
JP (1) | JPH077200A (de) |
DE (1) | DE69303871T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5306385A (en) * | 1992-09-15 | 1994-04-26 | Texas Instruments Incorporated | Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate |
US6614161B1 (en) * | 1993-07-20 | 2003-09-02 | University Of Georgia Research Foundation, Inc. | Resonant microcavity display |
US5478658A (en) * | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
US5682402A (en) * | 1995-01-10 | 1997-10-28 | Hitachi, Ltd. | Organic luminescent devices with a multiplex structure |
FR2734094B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche |
US5881089A (en) * | 1997-05-13 | 1999-03-09 | Lucent Technologies Inc. | Article comprising an organic laser |
KR100377716B1 (ko) * | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법 |
EP1035623A1 (de) * | 1998-12-04 | 2000-09-13 | Interuniversitair Micro-Elektronica Centrum Vzw | Vorrichtung für die Emission von elektromagnetischer Strahlung und Herstellungsverfahren |
US6627923B1 (en) | 1999-07-12 | 2003-09-30 | Massachusetts Institute Of Technology | Resonant microcavities |
US6603605B1 (en) * | 1999-11-05 | 2003-08-05 | Interuniversitair Microelektronica Centrum (Imec, Vzw) | System for guiding a beam of electromagnetic radiation |
US6879618B2 (en) * | 2001-04-11 | 2005-04-12 | Eastman Kodak Company | Incoherent light-emitting device apparatus for driving vertical laser cavity |
US20070051963A1 (en) * | 2005-09-06 | 2007-03-08 | Yifan Chen | Semiconductor light source |
JP4768466B2 (ja) * | 2006-02-16 | 2011-09-07 | シャープ株式会社 | 発光デバイス装置 |
EP2467881A4 (de) | 2009-08-21 | 2014-12-24 | California Inst Of Techn | Systeme und verfahren zum optischen antreiben von wandlern und entsprechende wandler |
US9031102B2 (en) | 2012-03-01 | 2015-05-12 | California Institute Of Technology | Methods of modulating microlasers at ultralow power levels, and systems thereof |
US9065241B2 (en) * | 2012-05-11 | 2015-06-23 | Massachusetts Institute Of Technology | Methods, systems, and apparatus for high energy optical-pulse amplification at high average power |
CN109600904B (zh) * | 2019-01-08 | 2020-03-06 | 惠州学院 | 半导体激光加速器及其激光加速单元 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731225A (en) * | 1962-04-02 | 1973-05-01 | Sanders Associates Inc | Fiber optic laser system |
US4081763A (en) * | 1973-01-04 | 1978-03-28 | Natalya Andreevna Vlasenko | Electroluminescent laser |
US4782494A (en) * | 1986-05-30 | 1988-11-01 | Hughes Aircraft Company | Method of providing continuous lasing operation |
JP2553696B2 (ja) * | 1989-03-24 | 1996-11-13 | 松下電器産業株式会社 | 多色発光薄膜エレクトロルミネセンス装置 |
US5117437A (en) * | 1990-03-02 | 1992-05-26 | The University Of Michigan | Continuous-wave pair-pumped laser system |
US5038358A (en) * | 1990-03-02 | 1991-08-06 | The University Of Michigan | Trio upconversion laser system |
US5107538A (en) * | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
US5301204A (en) * | 1992-09-15 | 1994-04-05 | Texas Instruments Incorporated | Porous silicon as a light source for rare earth-doped CaF2 laser |
-
1992
- 1992-09-15 US US07/945,991 patent/US5369657A/en not_active Expired - Lifetime
-
1993
- 1993-09-14 JP JP5229206A patent/JPH077200A/ja active Pending
- 1993-09-15 DE DE69303871T patent/DE69303871T2/de not_active Expired - Fee Related
- 1993-09-15 EP EP93114866A patent/EP0588327B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69303871T2 (de) | 1996-12-12 |
US5369657A (en) | 1994-11-29 |
EP0588327A1 (de) | 1994-03-23 |
JPH077200A (ja) | 1995-01-10 |
EP0588327B1 (de) | 1996-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |