DE69231956D1 - Gleichspannungsgenerator mit geringem ruhestrom für den bereitschaftsbetrieb - Google Patents

Gleichspannungsgenerator mit geringem ruhestrom für den bereitschaftsbetrieb

Info

Publication number
DE69231956D1
DE69231956D1 DE69231956T DE69231956T DE69231956D1 DE 69231956 D1 DE69231956 D1 DE 69231956D1 DE 69231956 T DE69231956 T DE 69231956T DE 69231956 T DE69231956 T DE 69231956T DE 69231956 D1 DE69231956 D1 DE 69231956D1
Authority
DE
Germany
Prior art keywords
stand
voltage generator
low quiet
quiet current
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231956T
Other languages
English (en)
Other versions
DE69231956T2 (de
Inventor
Shuen-Chin Chang
Moon Gone Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor Inc
Original Assignee
Samsung Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor Inc filed Critical Samsung Semiconductor Inc
Application granted granted Critical
Publication of DE69231956D1 publication Critical patent/DE69231956D1/de
Publication of DE69231956T2 publication Critical patent/DE69231956T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
DE69231956T 1991-01-16 1992-01-15 Gleichspannungsgenerator mit geringem ruhestrom für den bereitschaftsbetrieb Expired - Lifetime DE69231956T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/641,883 US5187386A (en) 1991-01-16 1991-01-16 Low standby current intermediate dc voltage generator
PCT/US1992/000267 WO1992013390A1 (en) 1991-01-16 1992-01-15 Low standby current intermediate dc voltage generator

Publications (2)

Publication Number Publication Date
DE69231956D1 true DE69231956D1 (de) 2001-08-30
DE69231956T2 DE69231956T2 (de) 2002-04-04

Family

ID=24574255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231956T Expired - Lifetime DE69231956T2 (de) 1991-01-16 1992-01-15 Gleichspannungsgenerator mit geringem ruhestrom für den bereitschaftsbetrieb

Country Status (7)

Country Link
US (1) US5187386A (de)
EP (1) EP0520070B1 (de)
JP (1) JP2799772B2 (de)
KR (1) KR0139316B1 (de)
AU (1) AU1549992A (de)
DE (1) DE69231956T2 (de)
WO (1) WO1992013390A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486774A (en) * 1991-11-26 1996-01-23 Nippon Telegraph And Telephone Corporation CMOS logic circuits having low and high-threshold voltage transistors
JP3626521B2 (ja) * 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
DE19547754C1 (de) * 1995-12-20 1997-04-03 Texas Instruments Deutschland Steuerschaltung für BiCMOS-Bustreiber
US6914548B2 (en) * 2000-04-28 2005-07-05 Mcgill University Programmable DC voltage generator
US6388495B1 (en) * 2001-02-23 2002-05-14 Sun Microsystems, Inc. Dynamic termination and clamping circuit
US20030173828A1 (en) * 2002-02-27 2003-09-18 Bachinski Thomas J. Standby power generation system, unit, and method
US7030695B2 (en) * 2003-07-02 2006-04-18 Sigmatel, Inc. Low threshold voltage circuit employing a high threshold voltage output stage
US20060119104A1 (en) * 2004-12-07 2006-06-08 Wall Jerrold R Portable wind up DC generator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
JP2509596B2 (ja) * 1987-01-14 1996-06-19 株式会社東芝 中間電位生成回路
US4908528A (en) * 1988-07-21 1990-03-13 Vlsi Technology, Inc. Input circuit having improved noise immunity
US5027053A (en) * 1990-08-29 1991-06-25 Micron Technology, Inc. Low power VCC /2 generator

Also Published As

Publication number Publication date
EP0520070B1 (de) 2001-07-25
EP0520070A1 (de) 1992-12-30
DE69231956T2 (de) 2002-04-04
AU1549992A (en) 1992-08-27
US5187386A (en) 1993-02-16
WO1992013390A1 (en) 1992-08-06
JPH05507576A (ja) 1993-10-28
EP0520070A4 (en) 1993-07-07
KR0139316B1 (en) 1998-06-15
JP2799772B2 (ja) 1998-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition