DE69222144D1 - Treiber, insbesondere für Leistungs-MOS-Halbbrücken - Google Patents

Treiber, insbesondere für Leistungs-MOS-Halbbrücken

Info

Publication number
DE69222144D1
DE69222144D1 DE69222144T DE69222144T DE69222144D1 DE 69222144 D1 DE69222144 D1 DE 69222144D1 DE 69222144 T DE69222144 T DE 69222144T DE 69222144 T DE69222144 T DE 69222144T DE 69222144 D1 DE69222144 D1 DE 69222144D1
Authority
DE
Germany
Prior art keywords
drivers
power mos
half bridges
mos half
bridges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69222144T
Other languages
English (en)
Other versions
DE69222144T2 (de
Inventor
Roberto Gariboldi
Marcello Leone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69222144D1 publication Critical patent/DE69222144D1/de
Publication of DE69222144T2 publication Critical patent/DE69222144T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
DE69222144T 1992-03-12 1992-03-12 Treiber, insbesondere für Leistungs-MOS-Halbbrücken Expired - Fee Related DE69222144T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830119A EP0559996B1 (de) 1992-03-12 1992-03-12 Treiber, insbesondere für Leistungs-MOS-Halbbrücken

Publications (2)

Publication Number Publication Date
DE69222144D1 true DE69222144D1 (de) 1997-10-16
DE69222144T2 DE69222144T2 (de) 1998-02-05

Family

ID=8212079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69222144T Expired - Fee Related DE69222144T2 (de) 1992-03-12 1992-03-12 Treiber, insbesondere für Leistungs-MOS-Halbbrücken

Country Status (4)

Country Link
US (2) US5376832A (de)
EP (1) EP0559996B1 (de)
JP (1) JPH0698529A (de)
DE (1) DE69222144T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407594B1 (en) 1993-04-09 2002-06-18 Sgs-Thomson Microelectronics S.R.L. Zero bias current driver control circuit
DE69415958T2 (de) * 1994-03-29 1999-05-27 St Microelectronics Srl Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase
JPH0897706A (ja) * 1994-09-26 1996-04-12 Nec Corp 出力バッファ回路
GB9423046D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US5740109A (en) * 1996-08-23 1998-04-14 Motorola, Inc. Non-linear charge pump
JP2001507524A (ja) * 1997-10-28 2001-06-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ハーフブリッジ回路を具える半導体デバイス
US6477079B2 (en) 1999-05-18 2002-11-05 Kabushiki Kaisha Toshiba Voltage generator for semiconductor device
US6140805A (en) * 1999-05-18 2000-10-31 Kabushiki Kaisha Toshiba Source follower NMOS voltage regulator with PMOS switching element
GB2404507B (en) * 2003-07-31 2006-06-21 Zetex Plc A high side switching circuit
JP4820544B2 (ja) * 2004-10-27 2011-11-24 株式会社エヌエフ回路設計ブロック リニア動作の電力増幅回路および電力増幅器
DE202006005725U1 (de) * 2006-04-07 2007-08-16 Wyremba, Hans-Peter Treiberanordnung für ein Gate zumindest eines Transistors
CN101135718B (zh) * 2007-09-10 2010-06-02 中兴通讯股份有限公司 一种驱动器电路
US8222927B2 (en) * 2009-04-09 2012-07-17 Mediatek Inc. Reference buffer circuit
JP2012060550A (ja) * 2010-09-13 2012-03-22 Mitsubishi Electric Corp 電力増幅器
CN103516340B (zh) * 2012-06-29 2017-01-25 快捷半导体(苏州)有限公司 一种最大电压选择电路、方法及子选择电路
TWI495246B (zh) * 2012-10-24 2015-08-01 Nat Univ Tsing Hua 諧振直流轉換器
EP3193436B1 (de) * 2016-01-15 2019-10-30 Nxp B.V. Ladungspumpe zum ansteuern eines lastschalters
US11942929B2 (en) * 2022-07-26 2024-03-26 Psemi Corporation Integrated PCM driver

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906056A (en) * 1987-04-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha High speed booster circuit
US4896297A (en) * 1987-10-23 1990-01-23 Mitsubishi Denki Kabushiki Kaisha Circuit for generating a boosted signal for a word line
IT1227430B (it) * 1988-07-22 1991-04-11 Sgs Thomson Microelectronics Circuito a pompa di carica a induttanza e capacita' per il pilotaggio di ponti a transistori mos di potenza.
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
US5268871A (en) * 1991-10-03 1993-12-07 International Business Machines Corporation Power supply tracking regulator for a memory array
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS

Also Published As

Publication number Publication date
DE69222144T2 (de) 1998-02-05
EP0559996A1 (de) 1993-09-15
EP0559996B1 (de) 1997-09-10
US5541540A (en) 1996-07-30
JPH0698529A (ja) 1994-04-08
US5376832A (en) 1994-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee