DE69216061D1 - Organische Feldeffekt-Schaltanordnung - Google Patents

Organische Feldeffekt-Schaltanordnung

Info

Publication number
DE69216061D1
DE69216061D1 DE69216061T DE69216061T DE69216061D1 DE 69216061 D1 DE69216061 D1 DE 69216061D1 DE 69216061 T DE69216061 T DE 69216061T DE 69216061 T DE69216061 T DE 69216061T DE 69216061 D1 DE69216061 D1 DE 69216061D1
Authority
DE
Germany
Prior art keywords
field effect
switching arrangement
organic field
effect switching
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216061T
Other languages
English (en)
Other versions
DE69216061T2 (de
Inventor
Yoshio Hanazato
Satoru Isoda
Satoshi Ueyama
Satoshi Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3324739A external-priority patent/JP3014519B2/ja
Priority claimed from JP4153798A external-priority patent/JPH05347402A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69216061D1 publication Critical patent/DE69216061D1/de
Publication of DE69216061T2 publication Critical patent/DE69216061T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
DE69216061T 1991-12-09 1992-10-20 Organische Feldeffekt-Schaltanordnung Expired - Fee Related DE69216061T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3324739A JP3014519B2 (ja) 1991-12-09 1991-12-09 有機電界スイッチング素子
JP4153798A JPH05347402A (ja) 1992-06-12 1992-06-12 有機電界スイッチング素子

Publications (2)

Publication Number Publication Date
DE69216061D1 true DE69216061D1 (de) 1997-01-30
DE69216061T2 DE69216061T2 (de) 1997-05-15

Family

ID=26482315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216061T Expired - Fee Related DE69216061T2 (de) 1991-12-09 1992-10-20 Organische Feldeffekt-Schaltanordnung

Country Status (3)

Country Link
US (1) US5349203A (de)
EP (1) EP0546665B1 (de)
DE (1) DE69216061T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722669A (ja) * 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US5641611A (en) * 1995-08-21 1997-06-24 Motorola Method of fabricating organic LED matrices
KR100303934B1 (ko) * 1997-03-25 2001-09-29 포만 제프리 엘 낮은작동전압을필요로하는유기반도체를갖는박막전장효과트랜지스터
DE19741716A1 (de) * 1997-09-22 1999-03-25 Hoechst Ag Adressierbares modulares Erkennungssystem, seine Herstellung und Verwendung
DE19741715A1 (de) * 1997-09-22 1999-03-25 Hoechst Ag Pentopyranosyl-Nucleosid, seine Herstellung und Verwendung
JP4878429B2 (ja) 2002-07-22 2012-02-15 株式会社リコー 能動素子及びそれを有するｅｌ表示素子
US20060226420A1 (en) * 2003-07-10 2006-10-12 Matsushita Electric Industrial Co., Ltd. Organic thin-film transistor and process for fabricating the same, active matrix type display employing it and radio identification tag
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
US20070126001A1 (en) * 2005-12-05 2007-06-07 Sung-Yool Choi Organic semiconductor device and method of fabricating the same
US8272458B2 (en) * 2008-06-12 2012-09-25 Nackerud Alan L Drill bit with replaceable blade members

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360703A (en) * 1981-04-28 1982-11-23 National Research Council Of Canada Photovoltaic cell having P-N junction of organic materials
US5185208A (en) * 1987-03-06 1993-02-09 Matsushita Electric Industrial Co., Ltd. Functional devices comprising a charge transfer complex layer
JPS63237293A (ja) * 1987-03-24 1988-10-03 Matsushita Electric Ind Co Ltd 可変調分子素子
JPH02123768A (ja) * 1988-11-02 1990-05-11 Mitsubishi Electric Corp 有機半導体薄膜の製造方法および該薄膜を含む半導体デバイス
JP2752687B2 (ja) * 1989-03-29 1998-05-18 三菱電機株式会社 ヘテロ分子接合に基づく光素子
US5010451A (en) * 1989-03-29 1991-04-23 Mitsubishi Denki K.K. Electronic device
EP0418504B1 (de) * 1989-07-25 1995-04-05 Matsushita Electric Industrial Co., Ltd. Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren

Also Published As

Publication number Publication date
DE69216061T2 (de) 1997-05-15
EP0546665A2 (de) 1993-06-16
US5349203A (en) 1994-09-20
EP0546665A3 (en) 1993-11-10
EP0546665B1 (de) 1996-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee