DE69126357D1 - Methode und Gerät zum Schreiben mittels Atomemission - Google Patents

Methode und Gerät zum Schreiben mittels Atomemission

Info

Publication number
DE69126357D1
DE69126357D1 DE69126357T DE69126357T DE69126357D1 DE 69126357 D1 DE69126357 D1 DE 69126357D1 DE 69126357 T DE69126357 T DE 69126357T DE 69126357 T DE69126357 T DE 69126357T DE 69126357 D1 DE69126357 D1 DE 69126357D1
Authority
DE
Germany
Prior art keywords
writing
atomic emissions
emissions
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126357T
Other languages
English (en)
Other versions
DE69126357T2 (de
Inventor
Peter Hermann Guethner
Harry Jonathon Mamin
Daniel Rugar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69126357D1 publication Critical patent/DE69126357D1/de
Application granted granted Critical
Publication of DE69126357T2 publication Critical patent/DE69126357T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31738—Direct-write microstructures using STM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69126357T 1990-04-05 1991-03-11 Methode und Gerät zum Schreiben mittels Atomemission Expired - Fee Related DE69126357T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/505,281 US5043578A (en) 1990-04-05 1990-04-05 Writing atomic scale features with fine tip as source of deposited atoms

Publications (2)

Publication Number Publication Date
DE69126357D1 true DE69126357D1 (de) 1997-07-10
DE69126357T2 DE69126357T2 (de) 1997-12-11

Family

ID=24009682

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126357T Expired - Fee Related DE69126357T2 (de) 1990-04-05 1991-03-11 Methode und Gerät zum Schreiben mittels Atomemission

Country Status (4)

Country Link
US (1) US5043578A (de)
EP (1) EP0450771B1 (de)
JP (1) JP2546928B2 (de)
DE (1) DE69126357T2 (de)

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EP0438256B1 (de) * 1990-01-19 1997-08-27 Canon Kabushiki Kaisha Informationsverarbeitungssystem und Informationsverarbeitungsmethode
WO1992012528A1 (en) * 1991-01-11 1992-07-23 Hitachi Limited Surface atom machining method and apparatus
JPH04355914A (ja) * 1991-02-06 1992-12-09 Olympus Optical Co Ltd リソグラフィー装置
JPH0575047A (ja) * 1991-03-08 1993-03-26 Hitachi Ltd 記憶装置
ES2029426A6 (es) * 1991-03-22 1992-08-01 Univ Madrid Obtencion de una fuente atomica de iones metalicos produciendo una fusion superficial por medio de un campo electrico.
GB9213423D0 (en) * 1992-06-24 1992-08-05 Hitachi Europ Ltd Nanofabricated structures
JPH0696714A (ja) * 1992-09-14 1994-04-08 Hitachi Ltd 表面加工装置および記録装置
JPH06249933A (ja) * 1993-03-01 1994-09-09 Seiko Instr Inc 磁気力顕微鏡用カンチレバー
JP3054900B2 (ja) * 1993-03-10 2000-06-19 セイコーインスツルメンツ株式会社 微細加工装置
EP0687889A3 (de) * 1994-06-16 1996-10-16 Japan Res Dev Corp Verfahren zur Feststellung der Atomverschiebung auf Materieoberflächen und Verfahren zur lokalen Zuführung von Heteroatomen
US5591903A (en) * 1994-08-11 1997-01-07 Iowa State University Research Foundation Reconstructing the shape of an atomic force microscope probe
US5874668A (en) * 1995-10-24 1999-02-23 Arch Development Corporation Atomic force microscope for biological specimens
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US6635311B1 (en) * 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US6398940B1 (en) 1999-02-05 2002-06-04 Danmarks Tekniske Universitet Method for fabricating nanoscale patterns on a surface
DE19906960C2 (de) * 1999-02-19 2002-11-07 Heidrun Bethge Verfahren zur Erzeugung von metallenen Strukturen im Nanometer-Bereich (nm-Bereich) auf leitenden Oberflächen
JP3624212B2 (ja) * 1999-05-13 2005-03-02 独立行政法人科学技術振興機構 走査型トンネル顕微鏡、その探針、その探針の処理方法及び微細構造物作製方法
US6185992B1 (en) * 1999-07-15 2001-02-13 Veeco Instruments Inc. Method and system for increasing the accuracy of a probe-based instrument measuring a heated sample
KR100331451B1 (ko) * 2000-05-10 2002-04-09 윤종용 탄소 함유 물질을 이용한 재기록 가능한 데이타 스토리지및 그 기록/재생 방법
US6730370B1 (en) * 2000-09-26 2004-05-04 Sveinn Olafsson Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium
WO2004031072A2 (en) 2002-05-21 2004-04-15 Northwestern University Electrostatically driven lithography
WO2004033480A2 (en) * 2002-05-21 2004-04-22 Northwestern University Peptide and protein arrays and direct-write lithographic printing of peptides and proteins
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7541062B2 (en) * 2004-08-18 2009-06-02 The United States Of America As Represented By The Secretary Of The Navy Thermal control of deposition in dip pen nanolithography
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US20100163355A1 (en) * 2008-12-25 2010-07-01 Hiroyuki Yamaguchi Shock absorber
US9097737B2 (en) 2013-11-25 2015-08-04 Oxford Instruments Asylum Research, Inc. Modular atomic force microscope with environmental controls
DE102016205941B4 (de) 2016-04-08 2020-11-05 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Analysieren eines Defekts einer fotolithographischen Maske oder eines Wafers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH643397A5 (de) * 1979-09-20 1984-05-30 Ibm Raster-tunnelmikroskop.
US4575822A (en) * 1983-02-15 1986-03-11 The Board Of Trustees Of The Leland Stanford Junior University Method and means for data storage using tunnel current data readout
US4539089A (en) * 1984-06-29 1985-09-03 International Business Machines Corporation Method for depositing material with nanometer dimensions
US4907195A (en) * 1984-09-14 1990-03-06 Xerox Corporation Method of and system for atomic scale recording of information
JPS6180536A (ja) * 1984-09-14 1986-04-24 ゼロツクス　コーポレーシヨン 原子規模密度情報記緑および読出し装置並びに方法
US4829507A (en) * 1984-09-14 1989-05-09 Xerox Corporation Method of and system for atomic scale readout of recorded information
EP0292519B1 (de) * 1986-12-07 1991-08-07 Lasarray Holding Ag Verfahren und vorrichtung zur erzeugung von materialstrukturen im bereich atomarer dimensionen
JPS63265101A (ja) * 1987-04-23 1988-11-01 Jeol Ltd 走査トンネル顕微鏡
US4906840A (en) * 1988-01-27 1990-03-06 The Board Of Trustees Of Leland Stanford Jr., University Integrated scanning tunneling microscope
JPH01213947A (ja) * 1988-02-22 1989-08-28 Nec Corp 固体表面評価装置
JPH01312753A (ja) * 1988-06-13 1989-12-18 Canon Inc 記録再生装置
US4896044A (en) * 1989-02-17 1990-01-23 Purdue Research Foundation Scanning tunneling microscope nanoetching method

Also Published As

Publication number Publication date
JPH0793830A (ja) 1995-04-07
JP2546928B2 (ja) 1996-10-23
EP0450771B1 (de) 1997-06-04
EP0450771A3 (en) 1993-02-24
US5043578A (en) 1991-08-27
DE69126357T2 (de) 1997-12-11
EP0450771A2 (de) 1991-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee