DE69124565D1 - Gassyntheseverfahren und -vorrichtung - Google Patents

Gassyntheseverfahren und -vorrichtung

Info

Publication number
DE69124565D1
DE69124565D1 DE69124565T DE69124565T DE69124565D1 DE 69124565 D1 DE69124565 D1 DE 69124565D1 DE 69124565 T DE69124565 T DE 69124565T DE 69124565 T DE69124565 T DE 69124565T DE 69124565 D1 DE69124565 D1 DE 69124565D1
Authority
DE
Germany
Prior art keywords
synthesis method
gas synthesis
gas
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124565T
Other languages
English (en)
Other versions
DE69124565T2 (de
Inventor
Yasuaki C O Nihon Shin Hayashi
Yukinobu C O Nihon Shin Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE69124565D1 publication Critical patent/DE69124565D1/de
Publication of DE69124565T2 publication Critical patent/DE69124565T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE1991624565 1990-11-05 1991-11-05 Gassyntheseverfahren und -vorrichtung Expired - Fee Related DE69124565T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29716790 1990-11-05

Publications (2)

Publication Number Publication Date
DE69124565D1 true DE69124565D1 (de) 1997-03-20
DE69124565T2 DE69124565T2 (de) 1997-09-11

Family

ID=17843057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991624565 Expired - Fee Related DE69124565T2 (de) 1990-11-05 1991-11-05 Gassyntheseverfahren und -vorrichtung

Country Status (3)

Country Link
EP (1) EP0484879B1 (de)
JP (1) JPH05889A (de)
DE (1) DE69124565T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05149720A (ja) * 1991-11-29 1993-06-15 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜の検査方法および検査装置
US5402237A (en) * 1992-11-12 1995-03-28 Santa Barbara Research Center Reflection-free ellipsometry measurement apparatus and method for small sample cells
KR100352127B1 (ko) * 2000-04-11 2002-09-12 김상열 회전검광자형 ｉｎ ｓｉｔｕ 타원계
KR20040041311A (ko) * 2002-11-11 2004-05-17 삼성전자주식회사 유기 박막의 물성적 특성을 분석하기 위한 방법 및 장치
KR100946596B1 (ko) 2008-02-28 2010-03-09 한양대학교 산학협력단 매핑용 타원해석기

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332833A (en) * 1980-02-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for optical monitoring in materials fabrication
GB8606748D0 (en) * 1986-03-19 1986-04-23 Secr Defence Monitoring surface layer growth
US4906844A (en) * 1988-08-12 1990-03-06 Rockwell International Corporation Phase sensitive optical monitor for thin film deposition

Also Published As

Publication number Publication date
EP0484879A2 (de) 1992-05-13
DE69124565T2 (de) 1997-09-11
EP0484879B1 (de) 1997-02-05
EP0484879A3 (en) 1993-03-31
JPH05889A (ja) 1993-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee